UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT1D5N10 Power MOSFET 1.5A, 100V N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UTT1D5N10 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switch speed and low gate charge. FEATURES * RDS(ON) < 290 mΩ @ VGS=10V, ID=0.75A RDS(ON) < 300 mΩ @ VGS=4.5V, ID=0.7A * High switch speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UTT1D5N10G-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-057.a UTT1D5N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous TA=25°C 1.5 A ID (Note 1) Drain Current 1.2 A TA=70°C 5 A Pulsed (Note 2) IDM Single Pulsed Avalanche Energy (Note 4) EAS 8 mJ TA=25°C 1.25 W Power Dissipation (Note 1) PD TA=70°C 0.8 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 1) SYMBOL θJA RATINGS 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=0.75A VGS=4.5V, ID=0.7A 1.0 DYNAMIC PARAMETERS (Note 3) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 3) Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RGEN=25Ω, Rise Time tR VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V Notes: 1. Surface Mounted on FR4 Board, t ≤ 10sec. 2. Pulse Test:Pulse Width≤300us, Duty Cycle≤ 2%. 3. Guaranteed by design, not subject to production testing. 4. Starting TJ=25°C, L=0.5mH, VDD=50V.(See Figure1) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 1.7 290 300 2.5 V µA nA nA V mΩ mΩ 350 28 23 pF pF pF 75 3 2.2 26 15 170 54 nC nC nC ns ns ns ns 0.8 1.2 V 2 of 5 QW-R209-057.a UTT1D5N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Figure 1. UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R209-057.a UTT1D5N10 Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 4 of 5 www.unisonic.com.tw QW-R209-057.a UTT1D5N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R209-057.a