UNISONIC TECHNOLOGIES CO., LTD
UTT40N10H
Preliminary
Power MOSFET
42A, 100V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC UTT40N10H is an N-channel enhancement mode
power MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance and fast switching,
etc.
The UTC UTT40N10H is suitable for low voltage applications
such as DC/DC converters.
FEATURES
* RDS(ON) < 30 mΩ @ VGS=10V, ID=28A
* Fast switching characteristic
* Lower on-resistance
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT40N10HL-TA3-T
UTT40N10HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UTT40N10H
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
TC=25°C
42
A
ID
Continuous Drain Current VGS @ 10V
TC=125°C
30
A
Pulsed Drain Current (Note 1)
IDM
140
A
Total Power Dissipation
TC=25°C
PD
167
W
Single Pulse Avalanche Energy (Note 3)
EAS
50
mJ
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (PCB Mount) (Note 4)
Junction to Ambient
Junction to Case
SYMBOL
VDSS
VGSS
SYMBOL
θJA
θJC
VALUE
40
62
0.75
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain Cut-Off Current
IDSS
VDS=80V, VGS=0V
25
µA
Forward
VGS=+20V, VDS=0V
+100 nA
Gate-Source Leakage Current
IGSS
-100 nA
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance (Note 2)
RDS(ON) VGS=10V, ID=28A
30
mΩ
Forward Transconductance
gFS
VDS=25V, ID=28A
45
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1400
pF
VGS=0V, VDS=25V,
Output Capacitance
COSS
120
pF
f=1.0MHz
35
pF
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
130
nC
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
14.8
nC
IG=100µA
6
nC
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
90
ns
Rise Time
tR
45
ns
VGS=10V, VDS=30V,
ID=0.5A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
115
ns
Fall-Time
tF
25
ns
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Forward On Voltage (Note 2)
VSD
IS=28A,VGS=0V
1.3
V
Reverse Recovery Time (Note 2)
trr
80
ns
IS=28A, VGS=0V,
dI/dt=100A/µs
270
nC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse test.
3. Starting TJ=25°C, VDD=50V, L=0.1mH, RG=25Ω, IAS=24A.
4. Surface mounted on 1 in2 copper pad of FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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