UNISONIC TECHNOLOGIES CO., LTD UTM3006-H Preliminary POWER MOSFET 81A, 30V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION 1 The UTC UTM3006-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance and low gate charge. The UTC UTM3006-H is suitable for load switch and networking DC-DC power system, etc. DFN-8(5x6) FEATURES * RDS(ON) < 5.5mΩ @ VGS=10V, ID=30A * Super low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UTM3006G-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-059.a UTM3006-H Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING PARAMETER RATINGS UNIT 30 V ±20 V VGS=10V, TC=25°C (Note 2) 81 A VGS=10V, TC=100°C (Note 2) 51 A ID Continuous Drain Current VGS=10V, TA=25°C (Note 2) 15 A VGS=10V, TA=70°C (Note 2) 12 A Pulsed (Note 3) IDM 160 A Single Pulse Avalanche Energy (Note 4) EAS 252 mJ Avalanche Current IAS 48 A Total Power Dissipation TC=25°C 59 W PD (Note 5) 2 W TA=25°C Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper 3. The data tested by pulsed, pulse width ≤ 300µs; duty cycle ≤ 2% 4. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=48A 5. The power dissipation is limited by 150°C junction temperature Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL RESISTANCE (Note 2) PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 2.1 UNIT °C/W °C/W 2 of 4 QW-R209-059.a UTM3006-H Preliminary POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS ON CHARACTERISTICS Static Drain-Source On-State Resistance (Note 2) ID=250µA, VGS=0V ∆BVDSS/∆TJ Reference to 25°C, ID=1mA IDSS Forward Reverse TEST CONDITIONS IGSS RDS(ON) MIN TYP 30 V 0.028 VDS=24V, VGS=0V, TJ=25°C VDS=24V, VGS=0V, TJ=55°C VGS=20V, VDS=0V VGS=-20V, VDS=0V VGS=10V, ID=30A VGS=4.5V, ID=15A MAX UNIT 4.5 7.5 1.5 -6.16 43 V/°C 1 5 100 -100 µA µA nA nA 5.5 9 2.5 mΩ mΩ V mV/°C S Gate Threshold Voltage VGS(TH) 1.2 VDS= VGS, ID=250µA VGS(TH) Temperature Coefficient ∆ VGS(TH) Forward Transconductance gFS VDS=5V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS 750 VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 170 Reverse Transfer Capacitance CRSS 115 Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz 1.7 2.9 SWITCHING PARAMETERS Total Gate Charge QG 122 VDS=30V, VGS=10V, ID=1A Gate to Source Charge QGS 2 IG=100µA 8.5 Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 20 Rise Time tR 60 VDD=30V, ID=0.5A, RG=25Ω VGS=10V Turn-OFF Delay Time tD(OFF) 360 Fall Time tF 315 GUARANTEED AVALANCHE CHARACTERISTICS Single Pulse Avalanche Energy (Note 3) EAS VDD=25V, L=0.1mH, IAS=24A 63 DIODE CHARACTERISTICS Continuous Source Current (Note 1, 4) IS 81 VG=VD=0V, Force Current 160 Pulsed Source Current (Note 2, 4) ISM Diode Forward Voltage (Note 4) VSD TJ=25°C, IS=1A, VGS=0V 1 Reverse Recovery Time tRR 14 IF=30A, dl/dt=100A/µs, TJ=25°C Reverse Recovery Charge QRR 5 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper 2. The data tested by pulsed, pulse width ≤ 300µs; duty cycle ≤ 2% 3. The Min. value is 100% EAS tested guarantee 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total dissipation UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw pF pF Pf Ω nC nC nC ns ns ns ns mJ A A V nS nC power 3 of 4 QW-R209-059.a UTM3006-H Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-059.a