Si4866BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectifier • Point-of-Load Synchronous Buck Converter SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 12 ±8 21.5 17.2 V 16.1b,c 12.9b,c 50 4.0 A 2.3b,c 20 20 4.45 2.85 mJ W 2.50b,c 1.6b,c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb,d t ≤ 10 s RthJA 40 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 23 28 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 °C/W. Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 1 Si4866BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 12 mV/°C - 3.5 0.4 1.0 V ± 100 nA VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 20 µA A VGS = 4.5 V, ID = 12 A 0.0042 0.0053 RDS(on) VGS = 2.5 V, ID = 10 A 0.0048 0.0060 VGS = 1.8 V, ID = 8 A 0.006 0.0074 gfs VDS = 15 V, ID = 12 A 80 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5020 VDS = 6 V, VGS = 0 V, f = 1 MHz 805 VDS = 6 V, VGS = 4.5 V, ID = 10 A td(off) 52 80 29.5 45 VDS = 6 V, VGS = 2.5 V, ID = 10 A 6.2 f = 1 MHz 0.8 1.3 26 40 VDD = 6 V, RL = 1.2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 18 30 85 130 tf 32 50 td(on) 13 25 tr td(off) nC 8.9 td(on) tr pF 1305 VDD = 6 V, RL = 1.2 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf 12 24 57 90 9 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4 50 IS = 2.3 A IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.62 1.1 V 50 80 ns 35 55 nC 19 31 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 1.5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 25 °C 1.2 TC = 125 °C 0.8 0.4 1V 0 0.0 0.5 1.0 1.5 - 55 °C 2.0 0.0 0.0 2.5 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0065 7000 VGS = 1.8 V 0.0060 5600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.6 0.0055 VGS = 2.5 V 0.0050 0.0045 Ciss 4200 2800 Coss 1400 VGS = 4.5 V Crss 0.0040 0 0 10 20 30 40 50 0 2 ID - Drain Current (A) 4 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.5 4.5 ID = 10 A ID = 12 A VDS = 4 V 3.6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V 2.7 VDS = 8 V 1.8 1.3 VGS = 1.8 V VGS = 4.5 V 1.1 0.9 0.9 0.0 0 11 22 33 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 44 55 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 10 0.016 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12 A 150 °C 1 25 °C 0.1 0.01 0.012 0.008 125 °C 0.004 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 200 160 Power (W) 0.1 VGS(th) Variance (V) 2 - 0.1 ID = 5 mA 120 80 - 0.3 40 I D = 250 µA - 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 1 ms Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 ID - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 6 2.0 5 1.6 Power (W) Power (W) 4 3 1.2 0.8 2 0.4 1 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 5 Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70341. www.vishay.com 6 Document Number: 70341 S09-0540-Rev. B, 06-Apr-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000