Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT15N10
Power MOSFET
15A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT15N10 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as high current switching applications.

FEATURES
* RDS(ON) < 125 mΩ @ VGS=10V, ID=7.5A
RDS(ON) < 148 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance
* Built-in gate protection diode
* High Switching Speed
* High Power and Current Handling Capability

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT15N10L-TM3-T
UTT15N10G-TM3-T
UTT15N10L-TN3-R
UTT15N10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UTT15N10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
15
A
Avalanche Energy
Single Pulsed
EAS
10
mJ
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
PD
34.7
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.08mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case

RATINGS
125
4.17
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
100
VGS(TH)
VDS=10V, ID=1mA
VGS=10V, ID=7.5A
VGS=4.5V, ID=7.5A
2.0
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=10V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=80V, ID=15A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=30V, ID=7.5A
RG=0Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=16A ,VGS=0V
Maximum Continuous Drain-Source
IS
VGS=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Repetitive
Forward Current
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
100
110
MAX UNIT
10
±10
V
µA
µA
4.0
125
148
V
mΩ
mΩ
900
110
50
pF
pF
pF
20
3
5
9
5
30
4
nC
nC
nC
ns
ns
ns
ns
1.0
V
15
A
60
A
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UTT15N10

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT15N10
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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