Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M3 screws. • Model with soldering terminals (EE-SB5). • Model with PCB terminals (EE-SB5-B). • Recommended sensing distance = 5.0 mm Two, 3.2±0.2 dia. holes Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 9±0.2 11.5±0.2 Item Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 80°C Storage Tstg –30°C to 80°C Tsol 260°C (see note 3) Four, 0.5 Four, 0.25 2.54±0.2 2.54±0.2 7.62±0.3 EE-SB5 EE-SB5-B Detector Internal Circuit A C K Unless otherwise specified, the tolerances are as shown below. Dimensions E Tolerance Name 3 < mm ≤ 6 ±0.3 ±0.375 A K C Anode Cathode Collector 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 3 mm max. Terminal No. Ambient temperature Rated value Forward current Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Emitter Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 176 EE-SB5(-B) Photomicrosensor (Reflective) IF = 30 mA ■ Engineering Data Distance d (mm) Relative light current IL (%) Sensing Angle Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Light current IL (μA) Ta = 25°C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Light current IL (mA) IF = 20 mA IF = 10 mA Response Time vs. Load Resistance Characteristics (Typical) VCC = 5 V Ta = 25°C Load resistance RL (kΩ) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Distance Characteristics (Typical) VCE = 10 V 0lx IF = 20 mA VCE = 10 V Ta = 25°C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% IF = 40 mA IF = 30 mA Response time tr, tf (μs) Dark Current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Ta = 25°C d = 5 mm Sensing object: White paper with a reflection factor of 90% Collector−Emitter voltage VCE (V) Forward current IF (mA) Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25°C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection fac tor of 90% Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Forward current IF (mA) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Distance d2 (mm) Distance d2 (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Ta = 25°C IF = 20 mA VCE = 10 V d = 5 mm Output Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) EE-SB5(-B) Photomicrosensor (Reflective) 177