Datasheet

Photomicrosensor (Reflective)
EE-SF5(-B)
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Dust-tight construction.
• With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
• Mounted with M2 screws.
• Model with soldering terminals (EE-SF5).
• Model with PCB terminals (EE-SF5-B).
• Recommended sensing distance = 5.0 mm
Matted
1.9 dia.
2.2±0.2 dia. hole
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Four,
1.5
Four,
0.5
7.6±1
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 80°C
Storage
Tstg
–30°C to 80°C
Tsol
260°C
(see note 3)
Four, 0.25
2.54
7.62±0.3
2.54±0.2
EE-SF5
Detector
EE-SF5-B
Internal Circuit
A
E
K
Dimensions
C
Terminal No.
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
Name
Anode
Cathode
Collector
Emitter
Ambient temperature
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
200 μA min., 2,000 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
172
EE-SF5(-B) Photomicrosensor (Reflective)
■ Engineering Data
IF = 20 mA
VCE = 5 V
Light current IL (mA)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
(a) : d1 = 3 mm
(b) : d1 = 5 mm
Sensing object: White
paper with a reflection
factor of 90%
d1
Sensing Angle Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
d = 5 mm
Angle deviation θ (°)
VCC = 5 V
Ta = 25°C
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
d1 = 5 mm
Sensing
object: White
paper with a
reflection
factor of 90%
Phototransistor side
LED side
d1 =
5 mm
Distance d2 (mm)
Distance d2 (mm)
Distance d (mm)
IF = 10 mA
Load resistance RL (kΩ)
Relative light current IL (%)
Ta = 25°C
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
IF = 20 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
VCE = 10 V
0lx
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
Ta = 25°C
d = 5 mm
IF = 40 mA
Sensing object:
White paper with
a reflection factor
of 90%
IF = 30 mA
Collector−Emitter voltage VCE (V)
Dark Current ID (nA)
Relative light current IL (%)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Light current IL (μA)
Ta = 25°C
VCE = 10 V
d = 5 mm
Sensing object:
White paper with a
reflection factor of
90%
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response time tr, tf (μs)
Forward current IF (mA)
Light current IL (μA)
Light Current vs. Forward Current
Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Sensing
object
Ta = 25°C
IF = 20 mA
VCE = 10 V
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
Output
Angle deviation θ (°)
EE-SF5(-B) Photomicrosensor (Reflective)
173
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