Datasheet

Photomicrosensor (Reflective)
EE-SY113
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact reflective Photomicrosensor (EE-SY110) with a molded
housing and a dust-tight cover.
• Recommended sensing distance = 4.4 mm
Four, 0.5
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Notch for directional discrimination
2.5
Detector
Four, 0.25
15 to 18
Ambient temperature
Internal Circuit
A
C
K
E
Terminal No.
Name
A
Anode
K
C
Cathode
Collector
E
Unless otherwise specified, the
tolerances are as shown below.
Emitter
Dimensions
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Operating
Topr
–40°C to 80°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
3 mm max.
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 1,600 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
166
EE-SY113 Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
VCE = 10 V
d = 4.4 mm
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ambient temperature Ta (°C)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Light current IL (μA)
Sensing object: White paper
with a reflection factor of 90%
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 4.4 mm
Sensing object:
White paper
with a reflection
factor of 90%
d1
d2
Direction
Distance d2 (mm)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Ambient temperature Ta (°C)
IF = 40 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Response time tr, tf (μs)
VCE = 10 V
0x
Dark current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Collector−Emitter voltage VCE (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Sensing object: White paper
with a reflection factor of 90%
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ta = 25°C
VCE = 10 V
IF = 20 mA
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY113 Photomicrosensor (Reflective)
167
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