Datasheet

Photomicrosensor (Reflective)
EE-SY171
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• 3-mm-tall, thin model
• Recommended sensing distance = 3.5 mm
Two, 1.2 dia.
Two, 2 dia.
Anode mark
■ Absolute Maximum Ratings (Ta = 25°C)
Four, 0.5
Item
Emitter
Detector
0° to 30°
Four, 0.25
Ambient temperature
Internal Circuit
A
C
K
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
±0.375
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–40°C to 85°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
50 μA min., 500 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of 90%,
d = 3.5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
Collector–Emitter saturated
voltage
VCE (sat)
---
---
850 nm typ.
VCE = 10 V
Peak spectral sensitivity wave- λP
length
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
158
EE-SY171 Photomicrosensor (Reflective)
■ Engineering Data
Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (°C)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Ta = 25°C
IF = 20 mA
VCE = 10 V
Sensing object: White
paper with a reflection
factor of 90%
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Sensing object: White paper
with a reflection factor of 90%
d1 = 3 mm
d1 = 4 mm
d1 = 5 mm
Distance d2 (mm)
Distance d (mm)
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Relative light current IL (%)
Sensing Distance Characteristics
(Typical)
Ta = 25°C
d = 3.5 mm
Sensing object: White
paper with a reflection
factor of 90%
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCE = 10 V
0lx
Dark Current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Light current IL (μA)
Ta = 25°C
VCE = 10 V
d = 3.5 mm
Sensing object:
White paper with a
reflection factor of
90%
Sensing Angle Characteristics
(Typical)
Relative light current IL (%)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light current IL (μA)
Light current IL (μA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
d = 3.5 mm
Sensing object:
White paper with
a reflection factor
of 90%
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY171 Photomicrosensor (Reflective)
159
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