Product Brief Features Demonstrating > 93% Efficiency in Voltage Regulation for Power Applications The New OptiMOS™ 25V/30V Family With the new OptiMOS™ 25V and 30V productfamily, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Ultra low gate- and output charge together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. OptiMOS™ 30V products are taylored to the needs of power management in Notebook by improved EMI behaviour as increased battery life. The new OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space - efficiency and cost. They are disigned to meet and exceed the Energy Efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications, such as Intels VR12 specification. With the new OptiMOS™ products Infineon has the best solution to: save overall system costs by reducing the number of phases in multiphase converters reduce power losses and increase Energy Efficiency for all load conditions save space with smallest packages like CanPAK™1) or S3O8 minimize EMI in the system making external snubber networks obsolete Benefits Efficiency [%] 96 94 92 90 88 86 84 82 80 78 76 74 72 70 Vin = 12V, Vout = 1.2V Lout = 210nH, Vdrive = 5V fswitch = 350kHz fswitch = 500kHz 0 20 40 60 80 100 120 140 Output Current [A] www.infineon.com/optimos 160 180 Outstanding performance of the new OptiMOS™ 25V and 30V products is exemplified on a six-phase Server Vcore VRD. 93% peak efficiency and >90% full load efficiency is demonstrated with new OptiMOS™ 25V products in SuperSO8 package. (HighSide:BSC050NE2LS; LowSide:BSC010NE2LS) Save overall system costs by reducing the number of phases in multiphase converters Highest efficiency Smallest footprint and highest power density with S3O8 & CanPAK™ Easy to design-in Can be driven from 5V system rail giving excellent performance Applications Efficiency of OptiMOS™ 25V in a six-phase server VRD Best in class on-state resistance Benchmark switching performance due to lowest Figure of Merits Ron x Qg and Ron x Qgd Low gate resistance Excellent 5V gate drive performance Optimized EMI behaviour based on an integrated damping network Super Barrier Diode may improved efficiency by upwards of 2%. RoHS compliant and halogen free On board power for server Power management for mobile computing Synchronous rectification High power density point of load converters Product Brief Demonstrating > 93% Efficiency in Voltage Regulation for Power Applications Six phase standard SuperSO8 solution compared to six phase S3O8 power density optimized design and four phase CanPAKTM cost optimized design based on OptiMOSTM 25V product family. SuperSO8 solution 6 phases S3O8 solution 6 phases CanPAK solution 5 phases Best in class on state resistance of Rdson(max@Vgs=10V)=1.8mΩ in S3O8 package (3.3 x 3.3mm²) enable highest power density solutions as demonstrated for a 130W high efficiency voltage regulator for Server application. Top side cooling capability of CanPAKTM enables >35A/phase and allows to reduce the overall system cost by reduction of phases. Clean waveforms for optimized EMI behavior make new OptiMOSTM 25V/30V products easy to use 17.5 12.5 Voltage across SyncFet [V] With new OptiMOS™ 25V/30V Vin = 12V Vdrive = 5V Iout = 20A 15.0 products short switching times (rise and fall times <5ns) go in hand with 10.5 excellent EMI behaviour. An integrated 7.5 damping network guarantees low 5.0 2.5 over- and undershoot and minimizes 0 ringing without sacrifycing efficiency -2.5 -5.0 0 100 200 300 400 500 600 700 800 900 1000 Time [ns] Product Portfolio OptiMOS™ 25 V und 30 V SuperSO8 S3O8 CanPAK™ M S3O8 30 V 25 V < 1.0 mΩ SuperSO8 CanPAK™ S BSC009NE2LS 3) BSC010NE2LS 1.0 - 1.5 mΩ BSC010NE2LSI 1) BSC014NE2LSI 1) 1.6 - 2.0 mΩ BSC018NE2LSI BSC018NE2LS 1) BSB012NE2LX BSB013NE2LXI 1) BSZ018NE2LSI BSZ018NE2LS 1) 2.6 - 3.0 mΩ BSC0902NS 2.1 - 2.5 mΩ BSC024NE2LS 3.0 - 4.0 mΩ BSC032NE2LS BSZ036NE2LS 4.1 - 4.5 mΩ BSF030NE2LQ 4.6 - 5.0 mΩ BSC050NE2LS 5.1 - 5.5 mΩ 5.6 - 6.0 mΩ BSZ060NE2LS Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2011 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9579-G2-X-7600-DB2011-0008 Date: 11 / 2012 30 V 1.0 - 1.5 mΩ BSC011N03LS BSC0901NS 1.6 - 2.0 mΩ BSC0901NSI 1) 2.1 - 2.5 mΩ BSB008NE2LS 3) S308 - Dual 7+9 mΩ BSZ019N03LS BSZ0907ND 2) 9+19 mΩ BSZ0908ND 2) BSZ0901NSI 1) BSZ0902NS BSZ0902NSI 1) 3.1 - 3.5 mΩ BSZ0902NSI 1) 3.6 - 4.0 mΩ BSC0904NSI 1) BSZ0904NSI 1) 5.1 - 5.5 mΩ BSC0906NS BSC052N03LS 6.1 - 6.5 mΩ 1) Product with Infineon® Super Barrier Diode (monolithically integrated Schottky like diode) BSZ065N03LS 7.0 - 8.0 mΩ BSC0908NS > 9.0 mΩ BSC0909NS 2) Upcoming products (SOP) will be released in Q4 2011 BSZ0909NS 3) Special products for Oring/ E-fuse Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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