DirectFET MOSFETs for Switching Applications

DC-DC
THE POWER MANAGEMENT LEADER
DirectFET® MOSFETs
for Switching Applications
Features:
•Industry lowest on-resistance in their respective
footprints
•Extremely low package resistance to minimize
conduction losses
•Highly efficient dual-sided cooling significantly
improves power density, cost and reliability
•Low profile of only 0.7mm
•Devices in small and medium cans optimized for
high frequency switching
•L-Can optimized for DC switch applications with
improved thermal performance than PQFN in a
smaller footprint than a DPAK/D2PAK
•Excellent reliability, RDA rates of only 0.8 ppm
•RoHS compliant, containing no lead or bromide
IR Advantage:
•DirectFET – In production for 7 years
•Industry leader in MOSFET Si technology
•Ultra low Rg and low charge minimizes
switching losses
•Integrated monolithic schottky for reduced
body-diode related loss
Applications:
•VRM Modules for Servers
•Workstations and mainframes
•Desktops, graphic Cards
•Notebook PCs
•DC Switch Applications( ORing & hot swap)
Improve Performance and Efficiency;
Reduce System Size and Part Count
IR’s DirectFET® MOSFETs are increasingly the preferred solution to reduce energy losses
while shrinking the design footprint in advanced switching applications.
The DirectFET® power package is a ground-breaking surface-mount power MOSFET
packaging technology. Compared to standard plastic discrete packages, DirectFET’s metal
can construction enables dual-sided cooling to effectively double the current handling
capacity as well as efficiency of high frequency DC-DC buck converters in an SO-8
footprint or smaller.
Moreover, the DirectFET® family features IR’s latest generation silicon technology to
deliver extremely low RDS(on) and charge to significantly reduce conduction and switching
losses and dramatically improve the efficiency of the entire system.
For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com
10771FS
1.2
20
10
15
15
15
1
1
1
St
ra
p™
1.4
ak
RO(JC) TOP
1.6
18
16
1
16
18
SO
-8
er
P
20
Po
w
RO(JC) BOTTOM
-8
SO
Po
w
er
P
ak ™
St
ra
p™
Co
pp
er
LF
-P
Bo
tto
m
le
ss
S
O-
8
ak
0
ak ™
10
0.2
Di
re
ct
FE
Bo
T®
tto
m
le
ss
SO
-8
0.4
1
LF
-P
3
0
0.6
Co
pp
er
0.8
Di
re
ct
FE
T®
DIE FREE PACKAGE RESISTANCE (DFPR)
Improve Performance and Efficiency; Reduce System Size and Part Count
DirectFET – The Optimal Package for DC-DC Applications
• Lowest Die Free Package Resistance for highest efficiency
• Lowest top-side thermal impedance for maximum power density
• Lowest package inductance for minimal parasitic ringing
• No lead frame, no wire bonding, no molding for robust and reliable design
25V DirectFET®s
Part Number
RDS(on) @ 4.5V
Typ. (mΩ)
RDS(on) @ 10V
Typ. (mΩ)
VGS Max.
(V)
QG Typ.
(nC)
QGD Typ.
(nC)
Rg Typ.
(Ω)
AN-1035 Layout Code
IRF6718L2PBF
1.4
0.7
±20
64
20
0.9
L6
IRF6717MTRPBF
1.6
0.95
±20
46
14.0
1.3
MX
IRF6715MTRPBF
2.1
1.3
±20
39
12.0
1.1
MX
IRF6714MTRPBF
2.6
1.6
±20
29
8
1.2
MX
IRF6713STRPBF
3.5
2.2
±20
21
6.3
0.4
SQ
IRF6711STRPBF
5.2
3.0
±20
13
4.4
0.4
SQ
IRF6712STRPBF
6.7
3.8
±20
12
4.0
1.7
SQ
IRF6710S2TRPBF
9
4.5
±20
8.8
3.0
0.3
S1
IRF6709S2TRPBF
10.1
5.9
±20
8.1
2.8
3.2
S1
RDS(on) @ 4.5V
Typ. (mΩ)
RDS(on) @ 10V
Typ. (mΩ)
VGS Max.
(V)
QG Typ.
(nC)
QGD Typ.
(nC)
Rg Typ.
(Ω)
AN-1035 Layout Code
IRF6798MTRPBF
1.6
0.95
±20
50
16
0.3
MX
IRF6797MTRPBF
1.8
1.1
±20
45
13
1.3
MX
IRF6795MTRPBF
2.4
1.4
±20
35
10
1.3
MX
25V DirectFETKY®
Part Number
30V DirectFET®s
Part Number
Function
RDS(on) @ 4.5V
Typ. (mΩ)
RDS(on) @ 10V
Typ. (mΩ)
VGS Max.
(V)
IRF6723M2D
QG Typ.
(nC)
QGD Typ.
(nC)
QSW
(nC)
Pad Outline
Code
MA
Dual Q1
11.0
8.6
±20
9
3.3
4.5
IRF6720S2
Q1
12.8
9.8
±20
7.9
2.8
3.7
S1
IRF6721S
Q1
10.9
8.5
±20
11
3.7
4.9
SQ
IRF6729M
FetKY Q2
2.7
2.2
±20
42
14
19
MX
IRF6727M
Q2
2.4
1.8
±20
49
16
21
MX
IRF6725M
Q2
3.2
2.4
±20
36
11
15
MX
For more information in North America call +1 310 252 7105, in Europe call +49 6102 884 311, or visit us at www.irf.com
10771FS
Similar pages