ESD/Surge Protection Diodes Quick Start Guide Edition 2014 Table of Contents 1. Glossary, Summary and Guidelines for Essential Parameters 2. Human Interface Devices 2.1. Keyboard, Keypad, Touchpad, Buttons 2.2. Headphone Jack, Speaker, Headset 3. High Speed Interfaces 3.1. USB 2.0 Single Port 3.2. USB 2.0 Dual Ports 3.3. USB 3.0 Super Speed 3.4. HDMI 1.3, HDMI 1.4 and DisplayPort 3.5. MHL Interface 3.6. Serial-ATA (SATA, e-SATA) 3.7. Gigabit Ethernet 3.8. xDSL (ADSL, VDSL) 3.9. Vcc Line Protection 4. Antenna Protection 4.1. GPS 4.2. FM Radio, Mobile TV, 4.3. NFC 4.4. WLAN, Bluetooth 5. Want to know more? Copyright © Infineon Technologies 2012. All rights reserved. Page 2 Glossary of Essential Parameters RDYN is the dynamic resistance of the diode, which is calculated according to the procedure described in Infineon AN210. VBR is the break down voltage defined at IR = -1mA. VRWM is the maximum reverse working voltage of the diode. VESD is the maximum ESD rating of the TVS diode as specified for contact ESD in IEC61000-4-2. VCL is the clamping voltage of the diode. In this guide it is specified at a TLP current of 16A, which is equivalent to nearly 8kV IEC61000-4-2. For clamping voltage values at other ESD levels please refer to product data sheets under ESD Protection & EMI Protection - Infineon Technologies. CL is the parasitic capacitance of the diode at 1MHz and 0V bias. IR is the reverse current of the diode specified at a given reverse voltage, VR. Unless otherwise specified, IR values are shown in this guide at VR = VRWM Copyright © Infineon Technologies 2012. All rights reserved. Page 3 Essential Parameters Summary RR DYN DYN Dynamic Resistance VV BR BR Breakdown Voltage @ IR = 1mA VV RWM RWM Reverse Max Working Voltage VV ESD ESD Destruction Voltage VV CLCL Clamping Voltage CL Diode Capacitance VESD VCL M VBR VRWM RDYN Copyright © Infineon Technologies 2012. All rights reserved. Page 4 Infineon’s TVS Portfolio for Wireless applications ESD Service Centers Standard Interfaces (Display, Audio, Touchscreen, …) • Package Size: 01005 / 0201 / 0402 (1-line), 0402 (2-line), 0303 (4-line) • VRMW = ±3.3 … 24 V • Ctyp = 2.5 … 48 pF • Rdyn = 0.2 … 1 Ω • VESD ≥ ±15 kV High-Speed Interfaces (USB2.0, USB3.0, HDMI, DP …) • Package Size: 01005 / 0201 / 0402 (1-line), 0403 (2-line), 0403 (4-line) • VRMW = ±3.3 … 5.3 V • Ctyp = 0.2 … 1 pF • Rdyn = 0.2 … 0.7 Ω • VESD ≥ ±15 kV Antennas Power lines (RF, NFC, GPS …) & Surge • Package Size: 01005 / 0201 / 0402 (1-line) • VRMW = ±3.6 … 18.5 V • Ctyp = 0.1 … 1 pF • Rdyn = 0.2 … 0.6 Ω • VESD ≥ ±15 kV • Package Size: 0201 / 0402 / 0603 / SC79 (1-line) SOT23 (2-line) • VRMW = ±5.0 … 24 V • Ctyp = 4 … 430 pF • Rdyn = 0.06 … 0.6 Ω • ISURGE = 1 … 50 A Mobile Devices Interfaces Protected with IFX TVS Human Interface Devices (HID) (cont.) Keyboard, Keypad, Touchpad, Buttons Main application requirements Schematic Robust ESD protection is required for keyboards, keypads, buttons, and other human interface devices because they are heavily exposed to ESD generated by consumers during routine use. Keypad ESD can be also self-generated by the equipment if it has moving parts or carries certain materials e.g. printers and copy machines with sliding parts carrying paper sheets. * 7 4 1 0 8 5 2 # 9 6 3 R1 R2 R3 C1 C2 C3 C4 In the case of battery-powered equipment, ESD diodes with very low leakage current are required to extend battery life. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD200-B1-CSP0201 1-Line 0201 CSP ±5.5V ±16kV 0.20Ω 13V@16A 100nA 6.5pF ESD202-B1-CSP01005 1-Line 01005 CSP ±5.5V ±12kV 0.20Ω 20V@16A 100nA 5.5pF ESD203-B1-02EL / 02ELS 1-Line 0402 / 0201 Plastic ±12V ±30kV 0.29Ω 17V@16A 23V@30A 50nA 6pF ESD207-B1-02EL / 02ELS 1-Line 0402 / 0201 Plastic ±3.3V ±30kV 0.13Ω 7V@16A 9V@30A 50nA 14pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 7 Human Interface Devices (HID) (cont.) Headphone Jack, Speaker, Headset Main application requirements Schematic An Audio CODEC is frequently more susceptible to ESD than many other ICs because it interfaces directly with external connectors, such as headset jacks, where ESD discharges can enter. For maximum protection, these highly susceptible audio systems require protection devices with extremely low dynamic resistance and low clamping voltages. Since audio signals are low frequency analog signals, usually less than 30kHz, diode capacitance is usually a “don’t care”. Bidirectional diodes are accommodate audio signals. normally compulsory to Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD200-B1-CSP0201 1-Line 0201 CSP ±5.5V ±16kV 0.20Ω 13V@16A 17V@30A 100nA 6.5pF ESD205-B1-02EL / 02ELS 1-Line 0402 / 0201 Plastic ±5.5V ±20kV 0.22Ω 10V@16A 13V@30A 100nA 5pF ESD206-B1-02EL / 02ELS 1-Line 0402 / 0201 Plastic ±5.5V ±30kV 0.15Ω 9V@16A 11V@30A 100nA 13pF ESD207-B1-02EL / 02ELS 1-Line 0402 / 0201 Plastic ±3.3V ±30kV 0.13Ω 7V@16A 9V@30A 50nA 14pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 8 High Speed Interfaces USB 2.0 Single Port (USB 2.0, Micro USB) Main application requirements Schematic USB ports are very susceptible to over-voltage transients like ESD discharges and Cable Discharge Events (CDE). Transients can propagate through the connector down to the data lines and end up in the heart of the IC/ASIC. To avoid damage, robust protection is required on data lines D+, D- and on the Vcc power-line. For high-speed USB2.0, the signal voltage on the D+,D- lines vary between -0.5V…+0.5V. For USB Full and Low Speed and for Vcc the TVS diode has to handle 5V. The data Rate of high-speed USB2.0 is 480Mbps. Capacitive loading from discrete components needs to be minimized for optimal signal integrity. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD108-B1-CSP0201 1-Line 0201 CSP ±5.5V ±25kV 0.76Ω 20V@16A 31V@30A 50nA 0.28pF ESD5V3U2U-03LRH 2-Line 0402 Plastic 5.3V ±20kV 0.60Ω 19V@16A 28V@30A 50nA 0.4pF ESD5V3U2U-03F 2-Line TSFP Leaded 5.3V ±20kV 0.60Ω 19V@16A 28V@30A 50nA 0.4pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 9 High Speed Interfaces USB 3.0 Super Speed Main application requirements Schematic Due to their construction USB3.0 pins are highly exposed to ESD originating during routine use and the newer USB3.0 microcontrollers are extremely susceptible to ESD. The USB3.0 link data transmission rate of 5GBps places formidable requirements on the capacitance of protection components, which needs to be low to achieve the highest signal integrity. For these reasons, Infineon offers tailored USB3.0 protection with low VCL , high VESD, and ultralow CL Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD102-U1-02ELS 1-Line 0201 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U2-099EL 2-Line 0402 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U4-05L 4-Line 0503 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD3V3U4ULC 4-Line 0904 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 10 High Speed Interfaces HDMI 1.3 / 1.4, DisplayPort Main application requirements Schematic (HDMI) +5V HDMI uses small CMOS geometries to increase data rate performance. The small geometries of these graphic chips make them highly susceptible to ESD. 1 TMDS Data2 2 High-Speed ESD protection Another common threat when plugging and unplugging cables are Cable Discharge Events (CDE). Common practice in the industry is to test CDE to the IEC61000-42 standard. HDMI Type A Connector HDMI Source/Sink 6 High-Speed ESD protection SDA 10 12 CEC Maximum data rate is 3.4Gb/s per pair. Some common ESD solutions cause signal distortion due to high capacitance resulting in poor signal integrity and video quality. 9 11 TMDS Clock SCL TMDS Channels 7 8 TMDS Data0 The signal voltage levels vary between 2.5V and 3.5V, and Vcc=5V. 4 5 TMDS Data1 ESD protection required on all differential pairs and Vcc. 3 ESD protection communication channel (Low-Speed) Hot Plug Detect ESD protection supply Voltage Vcc 13 CEC Line 14 N.C. 15 16 DDC (I²C Bus) 17 DDC/CEC GND 18 +5V 19 Hot Plug Detect Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD102-U1-02ELS 1-Line 0201 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U2-099EL 2-Line 0402 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U4-05L 4-Line 0503 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD5V3U4U-HDMI 4-Line 0904 Plastic 5.3V ±20kV 0.60Ω 19V@16A 28V@30A 50nA 0.4pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 11 High Speed Interfaces MHL Main application requirements Schematic USB PHY ID USB D+ USB D- The MHL standard features a single cable with a low pin-count interface able to support high-definition video and digital audio while simultaneously charging the connected device. High Speed TVS diode DPDT Switch MHL D+ MHL D- A data rate ̴2Gbps for transmission of 1080i/60 signal is required in broadcast applications. USB/MHL D+ USB/MHL DHigh Speed TVS diode MHL PHY MICRO USB The Mobile High-Definition Link (MHL) is a mobile audio/video interface that uses the existing Micro USB connector with an extra cable for directly connecting mobile phones, digital cameras and other portable devices to the HDMI port of High-Definition Televisions (HDTV) and Displays. VBUS Assuming no external charging capability, the MHL signaling voltage is ≤3Vpeak. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD102-U1-02ELS 1-Line 0201 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U2-099EL 2-Line 0402 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD102-U4-05L 4-Line 0503 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF ESD3V3U4ULC 4-Line 0904 Plastic 3.3V ±20kV 0.20Ω 8V@16A 11V@30A 50nA 0.4pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 12 High Speed Interfaces Serial ATA 3GBps and 6GBps Main application requirements Serial ATA supports data rates of 3GBps and 6GBps with a DC blocking design and a minimum voltage swing requirement of Vpp = 400mV. SATA voltage swing can rise to 700mV, and in dedicated SATA II mode, the peak voltage can rise to 1600mV (on one line the signal is +800mV vs. GND and on the other line it is -800mV). Normal location for ESD diodes would be between the blocking capacitors (~10nF) and the connector to keep the blocking capacitor safe from ESD. Ultralow capacitance bi-directional components are compulsory to maintain the signal integrity at the high data transmission rates of Serial ATA interfaces. Schematic Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD108-B1-CSP0201 1-Line 0201 CSP ±5.5V ±25kV 0.76Ω 20V@16A 31V@30A 50nA 0.28pF ESD112-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.3V ±20kV 1.00Ω 29V@16A 38V@30A 50nA 0.23pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 13 High Speed Interfaces Gigabit Ethernet Main application requirements Schematic Gigabit Ethernet operates transmitting and receiving data on four twisted cable pairs. The data signal voltage varies between 1.0V (100 and 1000Base) & 2.5V (10Base Ethernet). The data rates are 125Mb/s (100 and 1000 Base) and 12.5Mb/s (10 Base Ethernet). ESD robustness is required on both sides of the transformer. Recommended ESD protection parts Part Name TVS3V3L4U Description 4-Line SC74 Plastic VRWM VESD 1) EFT Surge RDYN2) VCL3) @ ITLP IR max CL typ 3.3V ±30kV 80A 20A 0.09Ω 6V@16A 7V@30A 50nA 2.0pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 14 High Speed Interfaces VDSL, ADSL and other Broadband Applications Main application requirements Schematic Wire line telecom systems are vulnerable to ESD, surge and cable discharge events and therefore subject to strict regulatory compliance to ensure system reliability. Vcc Primary protection is typically implemented where the outside line enters a structure, and secondary protection is applied to the equipment itself (see picture). TIP 4 2 The system is usually required to pass surge, power contact and power induction tests according to the ITU K20/21 telecommunication standard. 3 Primary Protection DSL Line Driver DSL70 1 The high-speed lines on the secondary side of the transformer demand protection devices with low capacitance to avoid signal distortion on the line. RING Recommended ESD protection parts Part Name DSL70 Description 2-Line SOT143 Plastic VRWM VESD 1) EFT Surge RDYN2) VCL-FWD3) @ ITLP IR max CL typ 50V[4] ±15kV 80A 27A 0.10Ω 2.5V+Vcc@16A 4V+Vcc@30A <5nA 2.5pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length – forward direction; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); [4] Rail to rail configuration Copyright © Infineon Technologies 2012. All rights reserved. Page 15 ESD Protection Vcc Lines INFINEON ESD Protection Solution Infineon offers a variety of general purpose diodes tailored for protection of power lines. The diodes offer very robust ESD absorption capability, exceeding the IEC61000-4-2 industry standard, and help to increase system level reliability of modern electronic devices. Due to their very low dynamic resistance, these diodes quickly clamp ESD strikes at very low voltages. After every ESD strike, the diodes recover very fast without any sign of degradation. The leakage current of the diode in normal operating conditions does not exceed 100nA max., favoring its application in battery-powered devices. These diodes are available in leadless packages with sizes down to 0.6 x 0.4 mm for maximum protection in the smallest area. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD206-B1-02EL/ELS/02V 1-Line 0402 /0201 / SC79 Plastic ±5.5V ±30kV 0.15Ω 9V@16A 11V@30A 100nA 13pF ESD207-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±3.3V ±30kV 0.13Ω 7V@16A 9V@30A 50nA 14pF ESD205-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.3V ±20kV 0.22Ω 10V@16A 13V@30A 100nA 5pF ESD204-B1-02EL/ELS 1-Line 0402 / 0201 Plastic -8/14V ±15kV 0.6Ω 28V@16A 35V@30A 50nA 4pF ESD5V0L1B-02V 1-Line SC79 Plastic (leaded) ±5.0V ±25kV 0.4Ω 22V@16A 26V@30A 50nA 8.5pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 16 Antenna Protection Global Positioning System (GPS) Main application requirements Schematic GNSS Application Due to the high operating frequencies >1.5GHz, the ESD protection capacitance must be <<1pF. The protection device needs to be as linear as possible to avoid unwanted harmonics and intermodulation distortion in the presence of a strong RF interferer. To keep the residual ESD stress minimized for the frontend system, the protection device should have as low of a clamping voltage as possible. Small package sizes are favored to allow integration into miniaturized modules and frontend systems. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD108-B1-CSP0201 1-Line 0201 CSP ±5.5V ±25kV 0.76Ω 20V@16A 31V@30A 50nA 0.28pF ESD105-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.5V ±25kV 0.50Ω 14V@16A 20@30A 50nA 0.25pF ESD112-B1-02EL 1-Line 0402 / 0201 Plastic ±5.3V ±20kV 1.00Ω 29V@16A 38V@30A 50nA 0.23pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 17 Antenna Protection FM Radio, Mobile TV Main application requirements Schematic FM Radio FM radio is a standard feature in most modern mobile phones and operates at frequencies from 76MHz to 108Mhz with an antenna power range of ≤20dBm. A protection circuit is necessary at the antenna to protect the delicate frontend system from ESD events originating during routine use. The protection device needs to have bidirectional characteristics and breakdown voltage from 5V to 10V to handle the DC free signal without clipping. Small package sizes are required to allow easier integration into miniaturized modules and frontend systems. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD108-B1-CSP0201 1-Line 0201 CSP ±5.5V ±25kV 0.76Ω 20V@16A 31V@30A 50nA 0.28pF ESD105-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.5V ±25kV 0.50Ω 14V@16A 21@30A 50nA 0.25pF ESD112-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.3V ±20kV 1.00Ω 29V@16A 38V@30A 50nA 0.23pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 18 Antenna Protection Near Field Communication (NFC) Main application requirements Schematic NFC is an up-coming feature in mobile phones to handle electronic cash, - payment and wireless access control. The carrier of 13.56MHz is modulated with low speed data rate. Range is strongly limited. The resonant loop antenna is often located in the mobile phone´s removable backplane. The ESD exposed connection pads to the phone´s mainboard (MB) must be ESD protected efficiently. To cope with the high RF amplitude @ the resonant loop antenna maximum working voltage of the TVS diode has to be > ±18V. Low TVS diode capacitance is mandatory to avoid a de-tuning of the antenna resonance. Recommended ESD protection parts Part Name ESD110-B1-02EL/ELS Description 1-Line 0402 / 0201 Plastic VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ±18.5V ±15kV 0.60Ω 26V@16A 34V@25A 30nA 0.3pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 19 Antenna Protection WLAN, Bluetooth Main application requirements Schematic (WLAN) The RF antenna is highly exposed to ESD events. A proper ESD protection is required showing dedicated features for the use in RF transmitting systems. ¬ Device capacitance has to be as small as possible to avoid an impact to the antenna matching. ¬ Device linearity has to be very good to keep harmonics generation and intermodulation distortion on a very low level. As higher the TX power or RF interferer @ the RF TVS diode is, as higher the TVS diode linearity has to be. NO compromise in the ESD performance (e.g. Rdyn) even linearity requirements are high. Recommended ESD protection parts Part Name Description VRWM VESD 1) RDYN2) VCL3) @ ITLP IR max CL typ ESD108-B1-CSP0201 1-Line 0201 CSP ±5.5V ±25kV 0.76Ω 20V@16A 31V@30A 50nA 0.28pF ESD105-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.5V ±25kV 0.50Ω 14V@16A 21@30A 50nA 0.25pF ESD103-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±15V ±10kV 1.80Ω 48V@16A 50nA 0.10pF ESD101-B1-02EL/ELS 1-Line 0402 / 0201 Plastic ±5.5V ±10kV 1.30Ω 29V@16A 50nA 0.10pF 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 3) TLP clamping voltage for 100 ns pulse length; 2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); Copyright © Infineon Technologies 2012. All rights reserved. Page 20 Want to know more? check www.infineon.com/esdprotection ! TVS Diode Data Sheets: www.infineon.com/esdprotection/ESD & EMI products Simulation Models www.infineon.com/esdprotection/ESDSimulationModels Application Guide for Protection (Brochure): www.infineon.com/rpd_appguide_protection Sample Kit: “Fast and Indestructible ESD Protection for Your Electronic System” Technical documentation www.infineon.com/esdprotection/technical documents: ESD & EMI Additional Information Application Notes Material Content Sheet PCB Design Data Product Brief Product Information Simulation Data ESD Competency & Service www.infineon.com/esdprotection/esdservice ESD Protection Forum www.infineon.com/esdprotection/esdforum Copyright © Infineon Technologies 2012. All rights reserved. Page 21 Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the devices, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Copyright © Infineon Technologies 2012. All rights reserved. Page 22