ESD Protection Quick Start Guide

ESD/Surge Protection Diodes
Quick Start Guide
Edition 2014
Table of Contents
1. Glossary, Summary and Guidelines for Essential Parameters
2. Human Interface Devices
2.1. Keyboard, Keypad, Touchpad, Buttons
2.2. Headphone Jack, Speaker, Headset
3. High Speed Interfaces
3.1. USB 2.0 Single Port
3.2. USB 2.0 Dual Ports
3.3. USB 3.0 Super Speed
3.4. HDMI 1.3, HDMI 1.4 and DisplayPort
3.5. MHL Interface
3.6. Serial-ATA (SATA, e-SATA)
3.7. Gigabit Ethernet
3.8. xDSL (ADSL, VDSL)
3.9. Vcc Line Protection
4. Antenna Protection
4.1. GPS
4.2. FM Radio, Mobile TV,
4.3. NFC
4.4. WLAN, Bluetooth
5. Want to know more?
Copyright © Infineon Technologies 2012. All rights reserved.
Page 2
Glossary of Essential Parameters
 RDYN is the dynamic resistance of the diode, which is calculated
according to the procedure described in Infineon AN210.
 VBR is the break down voltage defined at IR = -1mA.
 VRWM is the maximum reverse working voltage of the diode.
 VESD is the maximum ESD rating of the TVS diode as specified for
contact ESD in IEC61000-4-2.
 VCL is the clamping voltage of the diode. In this guide it is specified at
a TLP current of 16A, which is equivalent to nearly 8kV IEC61000-4-2.
For clamping voltage values at other ESD levels please refer to
product data sheets under ESD Protection & EMI Protection - Infineon
Technologies.
 CL is the parasitic capacitance of the diode at 1MHz and 0V bias.
 IR is the reverse current of the diode specified at a given reverse
voltage, VR. Unless otherwise specified, IR values are shown in this
guide at VR = VRWM
Copyright © Infineon Technologies 2012. All rights reserved.
Page 3
Essential Parameters Summary
RR
DYN
DYN
Dynamic Resistance
VV
BR
BR
Breakdown Voltage @ IR = 1mA
VV
RWM
RWM
Reverse Max Working Voltage
VV
ESD
ESD
Destruction Voltage
VV
CLCL
Clamping Voltage
CL
Diode Capacitance
VESD
VCL
M
VBR
VRWM
RDYN
Copyright © Infineon Technologies 2012. All rights reserved.
Page 4
Infineon’s TVS Portfolio for Wireless
applications
ESD Service
Centers
Standard
Interfaces
(Display, Audio,
Touchscreen, …)
• Package Size:
01005 / 0201 / 0402 (1-line),
0402 (2-line), 0303 (4-line)
• VRMW = ±3.3 … 24 V
• Ctyp = 2.5 … 48 pF
• Rdyn = 0.2 … 1 Ω
• VESD ≥ ±15 kV
High-Speed
Interfaces
(USB2.0, USB3.0,
HDMI, DP …)
• Package Size:
01005 / 0201 / 0402 (1-line),
0403 (2-line), 0403 (4-line)
• VRMW = ±3.3 … 5.3 V
• Ctyp = 0.2 … 1 pF
• Rdyn = 0.2 … 0.7 Ω
• VESD ≥ ±15 kV
Antennas
Power lines
(RF, NFC, GPS …)
& Surge
• Package Size:
01005 / 0201 / 0402 (1-line)
• VRMW = ±3.6 … 18.5 V
• Ctyp = 0.1 … 1 pF
• Rdyn = 0.2 … 0.6 Ω
• VESD ≥ ±15 kV
• Package Size:
0201 / 0402 / 0603 / SC79 (1-line)
SOT23 (2-line)
• VRMW = ±5.0 … 24 V
• Ctyp = 4 … 430 pF
• Rdyn = 0.06 … 0.6 Ω
• ISURGE = 1 … 50 A
Mobile Devices Interfaces
Protected with IFX TVS
Human Interface Devices (HID)
(cont.)
Keyboard, Keypad, Touchpad, Buttons
Main application requirements
Schematic
 Robust ESD protection is required for keyboards,
keypads, buttons, and other human interface devices
because they are heavily exposed to ESD generated by
consumers during routine use.
Keypad
 ESD can be also self-generated by the equipment if it
has moving parts or carries certain materials e.g. printers
and copy machines with sliding parts carrying paper
sheets.
*
7
4
1
0
8
5
2
#
9
6
3
R1
R2
R3
C1
C2
C3
C4
 In the case of battery-powered equipment, ESD diodes
with very low leakage current are required to extend
battery life.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD200-B1-CSP0201
1-Line 0201 CSP
±5.5V
±16kV
0.20Ω
[email protected]
100nA
6.5pF
ESD202-B1-CSP01005
1-Line 01005 CSP
±5.5V
±12kV
0.20Ω
[email protected]
100nA
5.5pF
ESD203-B1-02EL / 02ELS
1-Line 0402 / 0201 Plastic
±12V
±30kV
0.29Ω
[email protected]
[email protected]
50nA
6pF
ESD207-B1-02EL / 02ELS
1-Line 0402 / 0201 Plastic
±3.3V
±30kV
0.13Ω
[email protected]
[email protected]
50nA
14pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 7
Human Interface Devices (HID)
(cont.)
Headphone Jack, Speaker, Headset
Main application requirements
Schematic

An Audio CODEC is frequently more susceptible to ESD
than many other ICs because it interfaces directly with
external connectors, such as headset jacks, where ESD
discharges can enter.

For maximum protection, these highly susceptible
audio systems require protection devices with extremely
low dynamic resistance and low clamping voltages.

Since audio signals are low frequency analog signals,
usually less than 30kHz, diode capacitance is usually a
“don’t care”.

Bidirectional diodes are
accommodate audio signals.
normally
compulsory
to
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD200-B1-CSP0201
1-Line 0201 CSP
±5.5V
±16kV
0.20Ω
[email protected]
[email protected]
100nA
6.5pF
ESD205-B1-02EL / 02ELS
1-Line 0402 / 0201 Plastic
±5.5V
±20kV
0.22Ω
[email protected]
[email protected]
100nA
5pF
ESD206-B1-02EL / 02ELS
1-Line 0402 / 0201 Plastic
±5.5V
±30kV
0.15Ω
[email protected]
[email protected]
100nA
13pF
ESD207-B1-02EL / 02ELS
1-Line 0402 / 0201 Plastic
±3.3V
±30kV
0.13Ω
[email protected]
[email protected]
50nA
14pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 8
High Speed Interfaces
USB 2.0 Single Port (USB 2.0, Micro USB)
Main application requirements
Schematic
 USB ports are very susceptible to over-voltage
transients like ESD discharges and Cable Discharge
Events (CDE).
 Transients can propagate through the connector down
to the data lines and end up in the heart of the IC/ASIC.
To avoid damage, robust protection is required on data
lines D+, D- and on the Vcc power-line.
 For high-speed USB2.0, the signal voltage on the
D+,D- lines vary between -0.5V…+0.5V. For USB Full and
Low Speed and for Vcc the TVS diode has to handle 5V.
 The data Rate of high-speed USB2.0 is 480Mbps.
Capacitive loading from discrete components needs to be
minimized for optimal signal integrity.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD108-B1-CSP0201
1-Line 0201 CSP
±5.5V
±25kV
0.76Ω
[email protected]
[email protected]
50nA
0.28pF
ESD5V3U2U-03LRH
2-Line 0402 Plastic
5.3V
±20kV
0.60Ω
[email protected]
[email protected]
50nA
0.4pF
ESD5V3U2U-03F
2-Line TSFP Leaded
5.3V
±20kV
0.60Ω
[email protected]
[email protected]
50nA
0.4pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 9
High Speed Interfaces
USB 3.0 Super Speed
Main application requirements
Schematic
 Due to their construction USB3.0 pins are highly
exposed to ESD originating during routine use and the
newer USB3.0 microcontrollers are extremely susceptible
to ESD.
 The USB3.0 link data transmission rate of 5GBps places
formidable requirements on the capacitance of protection
components, which needs to be low to achieve the
highest signal integrity.
 For these reasons, Infineon offers tailored USB3.0
protection with low VCL , high VESD, and ultralow CL
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD102-U1-02ELS
1-Line 0201 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U2-099EL
2-Line 0402 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U4-05L
4-Line 0503 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD3V3U4ULC
4-Line 0904 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 10
High Speed Interfaces
HDMI 1.3 / 1.4, DisplayPort
Main application requirements
Schematic (HDMI)
+5V
 HDMI uses small CMOS geometries to increase data
rate performance. The small geometries of these graphic
chips make them highly susceptible to ESD.
1
TMDS Data2
2
High-Speed
ESD protection
 Another common threat when plugging and unplugging
cables are Cable Discharge Events (CDE). Common
practice in the industry is to test CDE to the IEC61000-42 standard.

HDMI Type A
Connector
HDMI Source/Sink
6
High-Speed
ESD protection
SDA
10
12
CEC
 Maximum data rate is 3.4Gb/s per pair. Some common
ESD solutions cause signal distortion due to high
capacitance resulting in poor signal integrity and video
quality.
9
11
TMDS Clock
SCL
TMDS Channels
7
8
TMDS Data0
 The signal voltage levels vary between 2.5V and 3.5V,
and Vcc=5V.
4
5
TMDS Data1
ESD protection required on all differential pairs and Vcc.
3
ESD protection
communication
channel
(Low-Speed)
Hot Plug Detect
ESD protection
supply Voltage Vcc
13
CEC Line
14
N.C.
15
16
DDC (I²C Bus)
17
DDC/CEC GND
18
+5V
19
Hot Plug Detect
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD102-U1-02ELS
1-Line 0201 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U2-099EL
2-Line 0402 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U4-05L
4-Line 0503 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD5V3U4U-HDMI
4-Line 0904 Plastic
5.3V
±20kV
0.60Ω
[email protected]
[email protected]
50nA
0.4pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 11
High Speed Interfaces
MHL
Main application requirements
Schematic
USB PHY
ID
USB D+
USB D-
 The MHL standard features a single cable with a low
pin-count interface able to support high-definition video
and digital audio while simultaneously charging the
connected device.
High Speed
TVS diode
DPDT
Switch
MHL D+
MHL D-
 A data rate ̴2Gbps for transmission of 1080i/60 signal
is required in broadcast applications.
USB/MHL D+
USB/MHL DHigh Speed
TVS diode
MHL PHY
MICRO USB
 The Mobile High-Definition Link (MHL) is a mobile
audio/video interface that uses the existing Micro USB
connector with an extra cable for directly connecting
mobile phones, digital cameras and other portable devices
to the HDMI port of High-Definition Televisions (HDTV)
and Displays.
VBUS
 Assuming no external charging capability, the MHL
signaling voltage is ≤3Vpeak.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD102-U1-02ELS
1-Line 0201 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U2-099EL
2-Line 0402 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD102-U4-05L
4-Line 0503 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
ESD3V3U4ULC
4-Line 0904 Plastic
3.3V
±20kV
0.20Ω
[email protected]
[email protected]
50nA
0.4pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 12
High Speed Interfaces
Serial ATA 3GBps and 6GBps
Main application requirements

Serial ATA supports data rates of 3GBps and 6GBps
with a DC blocking design and a minimum voltage
swing requirement of Vpp = 400mV.

SATA voltage swing can rise to 700mV, and in
dedicated SATA II mode, the peak voltage can rise to
1600mV (on one line the signal is +800mV vs. GND
and on the other line it is -800mV).

Normal location for ESD diodes would be between the
blocking capacitors (~10nF) and the connector to
keep the blocking capacitor safe from ESD.

Ultralow capacitance bi-directional components are
compulsory to maintain the signal integrity at the high
data transmission rates of Serial ATA interfaces.
Schematic
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD108-B1-CSP0201
1-Line 0201 CSP
±5.5V
±25kV
0.76Ω
[email protected]
[email protected]
50nA
0.28pF
ESD112-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.3V
±20kV
1.00Ω
[email protected]
[email protected]
50nA
0.23pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 13
High Speed Interfaces
Gigabit Ethernet
Main application requirements
Schematic
 Gigabit Ethernet operates transmitting and receiving
data on four twisted cable pairs.
 The data signal voltage varies between 1.0V (100 and
1000Base) & 2.5V (10Base Ethernet).
 The data rates are 125Mb/s (100 and 1000 Base) and
12.5Mb/s (10 Base Ethernet).
 ESD robustness is required on both sides of the
transformer.
Recommended ESD protection parts
Part Name
TVS3V3L4U
Description
4-Line SC74 Plastic
VRWM
VESD 1)
EFT
Surge
RDYN2)
VCL3) @ ITLP
IR max
CL typ
3.3V
±30kV
80A
20A
0.09Ω
[email protected]
[email protected]
50nA
2.0pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 14
High Speed Interfaces
VDSL, ADSL and other Broadband Applications
Main application requirements
Schematic
 Wire line telecom systems are vulnerable to ESD, surge
and cable discharge events and therefore subject to strict
regulatory compliance to ensure system reliability.
Vcc
 Primary protection is typically implemented where the
outside line enters a structure, and secondary protection is
applied to the equipment itself (see picture).
TIP
4
2
 The system is usually required to pass surge, power
contact and power induction tests
according to the ITU
K20/21 telecommunication standard.
3
Primary
Protection
DSL
Line Driver
DSL70
1
 The high-speed lines on the secondary side of the
transformer demand protection devices with low
capacitance to avoid signal distortion on the line.
RING
Recommended ESD protection parts
Part Name
DSL70
Description
2-Line SOT143 Plastic
VRWM
VESD 1)
EFT
Surge
RDYN2)
VCL-FWD3) @ ITLP
IR max
CL typ
50V[4]
±15kV
80A
27A
0.10Ω
[email protected]
[email protected]
<5nA
2.5pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length – forward direction;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
[4]
Rail to rail configuration
Copyright © Infineon Technologies 2012. All rights reserved.
Page 15
ESD Protection
Vcc Lines
INFINEON ESD Protection Solution

Infineon offers a variety of general purpose diodes tailored for protection of power lines.

The diodes offer very robust ESD absorption capability, exceeding the IEC61000-4-2 industry
standard, and help to increase system level reliability of modern electronic devices.

Due to their very low dynamic resistance, these diodes quickly clamp ESD strikes at very low
voltages. After every ESD strike, the diodes recover very fast without any sign of degradation.

The leakage current of the diode in normal operating conditions does not exceed 100nA max.,
favoring its application in battery-powered devices.

These diodes are available in leadless packages with sizes down to 0.6 x 0.4 mm for maximum
protection in the smallest area.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD206-B1-02EL/ELS/02V
1-Line 0402 /0201 / SC79
Plastic
±5.5V
±30kV
0.15Ω
[email protected]
[email protected]
100nA
13pF
ESD207-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±3.3V
±30kV
0.13Ω
[email protected]
[email protected]
50nA
14pF
ESD205-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.3V
±20kV
0.22Ω
[email protected]
[email protected]
100nA
5pF
ESD204-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
-8/14V
±15kV
0.6Ω
[email protected]
[email protected]
50nA
4pF
ESD5V0L1B-02V
1-Line SC79 Plastic (leaded)
±5.0V
±25kV
0.4Ω
[email protected]
[email protected]
50nA
8.5pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 16
Antenna Protection
Global Positioning System (GPS)
Main application requirements
Schematic GNSS Application
 Due to the high operating frequencies >1.5GHz, the
ESD protection capacitance must be <<1pF.
 The protection device needs to be as linear as possible
to avoid unwanted harmonics and intermodulation
distortion in the presence of a strong RF interferer.
 To keep the residual ESD stress minimized for the
frontend system, the protection device should have as low
of a clamping voltage as possible.
 Small package sizes are favored to allow integration
into miniaturized modules and frontend systems.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD108-B1-CSP0201
1-Line 0201 CSP
±5.5V
±25kV
0.76Ω
[email protected]
[email protected]
50nA
0.28pF
ESD105-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.5V
±25kV
0.50Ω
[email protected]
[email protected]
50nA
0.25pF
ESD112-B1-02EL
1-Line 0402 / 0201 Plastic
±5.3V
±20kV
1.00Ω
[email protected]
[email protected]
50nA
0.23pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 17
Antenna Protection
FM Radio, Mobile TV
Main application requirements
Schematic FM Radio
 FM radio is a standard feature in most modern mobile
phones and operates at frequencies from 76MHz to
108Mhz with an antenna power range of ≤20dBm.
 A protection circuit is necessary at the antenna to
protect the delicate frontend system from ESD events
originating during routine use.
 The protection device needs to have bidirectional
characteristics and breakdown voltage from 5V to 10V to
handle the DC free signal without clipping.
 Small package sizes are required to allow easier
integration into miniaturized modules and frontend
systems.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD108-B1-CSP0201
1-Line 0201 CSP
±5.5V
±25kV
0.76Ω
[email protected]
[email protected]
50nA
0.28pF
ESD105-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.5V
±25kV
0.50Ω
[email protected]
[email protected]
50nA
0.25pF
ESD112-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.3V
±20kV
1.00Ω
[email protected]
[email protected]
50nA
0.23pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 18
Antenna Protection
Near Field Communication (NFC)
Main application requirements
Schematic
 NFC is an up-coming feature in mobile phones to
handle electronic cash, - payment and wireless access
control. The carrier of 13.56MHz is modulated with low
speed data rate. Range is strongly limited.
 The resonant loop antenna is often located in the mobile
phone´s removable backplane. The ESD exposed
connection pads to the phone´s mainboard (MB) must be
ESD protected efficiently.
 To cope with the high RF amplitude @ the resonant
loop antenna maximum working voltage of the TVS diode
has to be > ±18V. Low TVS diode capacitance is
mandatory to avoid a de-tuning of the antenna resonance.
Recommended ESD protection parts
Part Name
ESD110-B1-02EL/ELS
Description
1-Line 0402 / 0201 Plastic
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
±18.5V
±15kV
0.60Ω
[email protected]
[email protected]
30nA
0.3pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 19
Antenna Protection
WLAN, Bluetooth
Main application requirements
Schematic (WLAN)
 The RF antenna is highly exposed to ESD events.
A proper ESD protection is required showing dedicated
features for the use in RF transmitting systems.
¬ Device capacitance has to be as small as possible to
avoid an impact to the antenna matching.
¬ Device linearity has to be very good to keep harmonics
generation and intermodulation distortion on a very low
level. As higher the TX power or RF interferer @ the RF TVS
diode is, as higher the TVS diode linearity has to be.
 NO compromise in the ESD performance (e.g. Rdyn)
even linearity requirements are high.
Recommended ESD protection parts
Part Name
Description
VRWM
VESD 1)
RDYN2)
VCL3) @ ITLP
IR max
CL typ
ESD108-B1-CSP0201
1-Line 0201 CSP
±5.5V
±25kV
0.76Ω
[email protected]
[email protected]
50nA
0.28pF
ESD105-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.5V
±25kV
0.50Ω
[email protected]
[email protected]
50nA
0.25pF
ESD103-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±15V
±10kV
1.80Ω
[email protected]
50nA
0.10pF
ESD101-B1-02EL/ELS
1-Line 0402 / 0201 Plastic
±5.5V
±10kV
1.30Ω
[email protected]
50nA
0.10pF
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
3) TLP clamping voltage for 100 ns pulse length;
2) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
Copyright © Infineon Technologies 2012. All rights reserved.
Page 20
Want to know more?
check www.infineon.com/esdprotection !
 TVS Diode Data Sheets: www.infineon.com/esdprotection/ESD & EMI products
 Simulation Models www.infineon.com/esdprotection/ESDSimulationModels
 Application Guide for Protection (Brochure): www.infineon.com/rpd_appguide_protection
 Sample Kit: “Fast and Indestructible ESD Protection for Your Electronic System”
 Technical documentation www.infineon.com/esdprotection/technical documents: ESD & EMI
 Additional Information
 Application Notes
 Material Content Sheet
 PCB Design Data
 Product Brief
 Product Information
 Simulation Data
 ESD Competency & Service www.infineon.com/esdprotection/esdservice
 ESD Protection Forum www.infineon.com/esdprotection/esdforum
Copyright © Infineon Technologies 2012. All rights reserved.
Page 21
Legal Disclaimer
 The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the devices,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of
any third party. For further information on technology, delivery terms and conditions and
prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
 Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office.
 Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Copyright © Infineon Technologies 2012. All rights reserved.
Page 22
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