Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UND02R075L
Power MOSFET
15A, 20V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UND02R075L is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with high switching
speed, a minimum on-state resistance and low gate charge, etc.
The UTC UND02R075L is suitable for DC-DC converters, load
switch and battery protection.

FEATURES
* RDS(on) < 7.5 mΩ @ VGS=4.5V, ID=15A
RDS(on) < 10 mΩ @ VGS=2.5 V, ID=12A
* High switching speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UND02R075LG-S08-R
Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UND02R075L

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous (Note a)
ID
15
A
Drain Current
50
A
Pulsed
IDM
Power Dissipation (Note a)
PD
2.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note a)
θJA
50
°C/W
Junction to Case (Note)
θJC
25
°C/W
Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is
determined by the user's board design.
a) 50°C/W when mounted on a 0.5 in2 pad of 2 oz copper.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
Reference to 25°C,
△BVDSS/△TJ
ID=250µA
IDSS
VDS=16V, VGS=0V
VGS=8V, VDS=0V
IGSS
VGS=-8V, VDS=0V
VGS(TH)
∆VGS(TH)/∆TJ
RDS(ON)
VDS=VGS, ID=250µA
ID = 250 µA, Referenced to
25°C
VGS=4.5V, ID=15A
VGS=4.5V, ID=15A,
TJ=125°C
VGS=2.5V, ID=12A
VGS=4.5V, VDS=-5V
On State Drain Current
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=10V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
VGS=5V, VDS=10V, ID=15A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=10V, ID=1A, RGEN=6Ω,
Rise Time
tR
VGS=4.5V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage
VSD
IS=2.1A, VGS=0V (Note)
Note: Pulse Test: Pulse Width≤300us, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
20
V
29
0.4
UNIT
0.9
mV/°C
1
+100
-100
µA
nA
nA
1.5
V
mV/℃
-4
6
7.5
mΩ
9
13
mΩ
8
10
mΩ
A
25
4700
850
310
pF
pF
pF
47
7
10.5
20
27
95
35
66
32
44
133
56
nC
nC
nC
ns
ns
ns
ns
0.65
2.1
1.2
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UND02R075L

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UND02R075L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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