UNISONIC TECHNOLOGIES CO., LTD Preliminary UND02R075L Power MOSFET 15A, 20V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UND02R075L is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, a minimum on-state resistance and low gate charge, etc. The UTC UND02R075L is suitable for DC-DC converters, load switch and battery protection. FEATURES * RDS(on) < 7.5 mΩ @ VGS=4.5V, ID=15A RDS(on) < 10 mΩ @ VGS=2.5 V, ID=12A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UND02R075LG-S08-R Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-036.b UND02R075L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous (Note a) ID 15 A Drain Current 50 A Pulsed IDM Power Dissipation (Note a) PD 2.5 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note a) θJA 50 °C/W Junction to Case (Note) θJC 25 °C/W Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user's board design. a) 50°C/W when mounted on a 0.5 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V Reference to 25°C, △BVDSS/△TJ ID=250µA IDSS VDS=16V, VGS=0V VGS=8V, VDS=0V IGSS VGS=-8V, VDS=0V VGS(TH) ∆VGS(TH)/∆TJ RDS(ON) VDS=VGS, ID=250µA ID = 250 µA, Referenced to 25°C VGS=4.5V, ID=15A VGS=4.5V, ID=15A, TJ=125°C VGS=2.5V, ID=12A VGS=4.5V, VDS=-5V On State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=10V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VGS=5V, VDS=10V, ID=15A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=10V, ID=1A, RGEN=6Ω, Rise Time tR VGS=4.5V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=2.1A, VGS=0V (Note) Note: Pulse Test: Pulse Width≤300us, Duty Cycle ≤ 2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 20 V 29 0.4 UNIT 0.9 mV/°C 1 +100 -100 µA nA nA 1.5 V mV/℃ -4 6 7.5 mΩ 9 13 mΩ 8 10 mΩ A 25 4700 850 310 pF pF pF 47 7 10.5 20 27 95 35 66 32 44 133 56 nC nC nC ns ns ns ns 0.65 2.1 1.2 A V 2 of 5 QW-R209-036.b UND02R075L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-036.b UND02R075L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-036.b UND02R075L Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-036.b