Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT2N10-H
POWER MOSFET
1.6A, 100V HEXFET POWER
MOSFET

DESCRIPTION
The UTC UTT2N10-H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge.
The UTC UTT2N10-H is suitable for Load/system switch.

FEATURES
* RDS(ON) < 235 mΩ @ VGS=4.5V, ID=1.3A
RDS(ON) < 220 mΩ @ VGS=10V, ID=1.6A
* High switching speed
* Low gate charge
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UTT2N10G-AE2-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
Pin Assignment
3
1
2
S
G
D
Packing
Tape Reel
S: Source
MARKING
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UTT2N10-H

POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±16
V
TA=25°C
1.6
A
ID
Continuous
Drain Current
TA=70°C
1.3
A
(VGS @ 10V)
Pulsed
IDM
7.0
A
TA=25°C
1.3
W
Power Dissipation
PD
TA=70°C
0.8
W
Linear Derating Factor
0.01
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=70mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
θJA
Note: Surface mounted on 1 in square Cu board.
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
100
UNIT
°C/W
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POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
100
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA
VDS=100, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V,
TJ=125°C
Forward
VGS=16V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-16V
ON CHARACTERISTICS
VGS=4.5V, ID=1.3A (Note 2)
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=1.6A (Note 2)
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=25µA
1.0
Forward Transconductance
gFS
VDS=50V, ID=1.6A
5.7
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Internal Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge
QG
ID=1.6A, VDS=50V, VGS=4.5V
Gate-to-Source Charge
QGS1
(Note 2)
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=50V, ID=1.0A, RG=6.8Ω
Rise Time
tR
V
Turn-OFF Delay Time
tD(OFF)
GS=4.5V, (Note 2)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current (Body Diode)
IS
MOSFET symbol showing
the integral reverse p-n
Pulsed Source Current (Body Diode)
ISM
junction diode.
(Note 1)
TJ=25°C, IS=1.1A, VGS=0V
Drain-Source Diode Forward Voltage
VSD
(Note 2)
Reverse Recovery Time
tRR
TJ=25°C, IF=1.1A, VR=50V,
di/dt=100A/us (Note 2)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive rating; pulse width limited by max. Junction temperature.
2. Pulse width ≤ 400µs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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TYP
MAX
UNIT
20
V
mV/°C
µA
250
µA
100
-100
nA
nA
235
220
2.5
mΩ
mΩ
V
S
0.10
190
178
290
27
13
1.3
pF
pF
pF
Ω
2.5
0.5
1.2
2.2
2.1
9.0
3.6
nC
nC
nC
ns
ns
ns
ns
20
13
1.1
A
7.0
A
1.3
V
30
20
ns
nC
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POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain
Voltage
Maximum Safe Operating Area
100
1.0
10
0.8
100us
0.6
1
0.4
0.2
0
1ms
0.
1
TA=25°C
Single Pulse
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source to Drain Voltage, VSD (V)
0
Transfer Characteristics
0.01
0.1
100
0.2
0.1
0.05
10
1
0.02
0.01
PD
0.1
M
0.1
25°C
0.01
1.5
Single
Pulse
2.0
2.5
3.0
3.5
4.0
Gate-Source Voltage, VGS (V)
Drain Current vs. Drain Source
Breakdown Voltage
1000
600
30
400
20
200
10
150
50
200
100
Drain Source Breakdown Voltage,
BVDSS (V)
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t1
Duty Factor=t1/t2
Peak TJ=PDM/RthJC+TC
0
1
10
Drain Current vs. Gate Threshold
Voltage
50
40
0
t2
0.01
1E-006
0.0001
0.01 0.1
1E-005
0.001
Pulse Width, t (s)
800
0
10
Effective Transient Thermal Impedance
Duty Factor=0.5
1
150°C
1
Drain-to-Source Voltage, -VDS (V)
100
10
10ms
0
50
100
150
200
Gate Threshold Voltage, VTH (V)
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POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Source On-State Resistance
Characteristics
2.0
On-state Characteristics
20
18
1.8
1.6
VG=8V
16
RDS(ON)+10
VG=10V
14
1.4
1.2
RDS(ON)+4.5
12
1.0
10
0.8
8.0
0.6
6.0
0.4
4.0
0.2
2.0
0
0
0
0.25
0.75
1.0
0.5
Drain to Source Voltage, VDS (V)
VG=4.5V
VG=6V
VG=4V
VG=3V
VG=2V
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Gate Threshold Voltage, VTH (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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