UNISONIC TECHNOLOGIES CO., LTD UNA03R150M Preliminary Power MOSFET 11A, 30V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION The UNA03R150M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 15 mΩ @ VGS =10V, ID =11A RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL ORDERING INFORMATION Ordering Number Note: UNA03R150MG-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel 1 of 6 QW-R209-089.a UNA03R150M Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-089.a UNA03R150M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TA=25°C) (Note 1) ID 11 A Pulsed Drain Current IDM 50 A Avalanche Current IAS 11 A Single Pulse Avalanche Energy (Note 3) EAS 50 mJ Power Dissipation (TC=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=0.8mH, IAS=11A, VDD=50V, RG=25Ω, starting TJ=25°C. 4. ISD≤11A, di/dt ≤ 200A/μs, VDD≤BVDSS, starting TJ=25°C. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 59 ~ 75 16 ~ 24 UNIT °C/W 3 of 7 QW-R209-089.a UNA03R150M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS ∆BVDSS ∆TJ TEST CONDITIONS VGS =0 V, ID =250 µA TYP MAX UNIT 30 V mV/° C ID=250uA, Referenced to 25°C Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IDSS IGSS VDS =24 V, VGS =0 V VDS =0 V, VGS = ±20 V VGS(TH) ID(ON) Static Drain-Source On-Resistance RDS(ON) VDS =VGS, ID =250 µA VDS =5V, VGS =4.5 V VGS =10V, ID =11A VGS =4.5 V, ID =10 A VDD=10V, ID=12A Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS =15V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS= 50V, ID= 1.3A, Gate Source Charge QGS VGS= 10 V (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF=11 A, dI/dt=100A/μs Body Diode Reverse Recovery QRR Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 1 40 0.003 1 100 µA nA 1.8 3 V A 12.6 19.6 15 24 mΩ S 800 140 80 1040 180 110 1250 220 140 15 19.8 2.5 3.5 4.5 3.9 17.4 3.2 24 6.5 5.5 25 5 ns 0.75 1 V 1 A 17.5 21 ns 9.3 12 nC pF nC 4 of 7 QW-R209-089.a UNA03R150M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-089.a UNA03R150M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-089.a UNA03R150M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-089.a