Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UNA03R150M
Preliminary
Power MOSFET
11A, 30V N-CHANNEL FAST
SWITCHING MOSFET

DESCRIPTION
The UNA03R150M uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or in
PWM applications.

FEATURES
* RDS(ON) < 15 mΩ @ VGS =10V, ID =11A
RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UNA03R150MG-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
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UNA03R150M

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TA=25°C) (Note 1)
ID
11
A
Pulsed Drain Current
IDM
50
A
Avalanche Current
IAS
11
A
Single Pulse Avalanche Energy (Note 3)
EAS
50
mJ
Power Dissipation (TC=25°C)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=0.8mH, IAS=11A, VDD=50V, RG=25Ω, starting TJ=25°C.
4. ISD≤11A, di/dt ≤ 200A/μs, VDD≤BVDSS, starting TJ=25°C.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
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RATINGS
59 ~ 75
16 ~ 24
UNIT
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
∆BVDSS
∆TJ
TEST CONDITIONS
VGS =0 V, ID =250 µA
TYP
MAX UNIT
30
V
mV/°
C
ID=250uA, Referenced to 25°C
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IDSS
IGSS
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20 V
VGS(TH)
ID(ON)
Static Drain-Source On-Resistance
RDS(ON)
VDS =VGS, ID =250 µA
VDS =5V, VGS =4.5 V
VGS =10V, ID =11A
VGS =4.5 V, ID =10 A
VDD=10V, ID=12A
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS= 50V, ID= 1.3A,
Gate Source Charge
QGS
VGS= 10 V (Note 1, 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
tRR
IF=11 A, dI/dt=100A/μs
Body Diode Reverse Recovery
QRR
Charge
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MIN
1
40
0.003
1
100
µA
nA
1.8
3
V
A
12.6
19.6
15
24
mΩ
S
800
140
80
1040
180
110
1250
220
140
15
19.8
2.5
3.5
4.5
3.9
17.4
3.2
24
6.5
5.5
25
5
ns
0.75
1
V
1
A
17.5
21
ns
9.3
12
nC
pF
nC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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