Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA06R063H
Power MOSFET
178A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UNA06R063H is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
high switching speed, a minimum on-state resistance and low gate
charge.
The UTC UNA06R063H is suitable for DC-DC converter, motor
control and load switching.

FEATURES
* RDS(ON) < 6.3 mΩ @ VGS=10V, ID=20A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA06R063HL-TA3-T
UNA06R063HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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UNA06R063H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
TC=25°C
178
A
ID
Continuous (Note 5)
Drain Current
TC=100°C
126
A
310
A
Pulsed (Note 3)
IDM
TA=25°C
12
A
Drain Current
Continuous
IDSM
TA=70°C
10
A
Avalanche Current (Note 3)
IAS, IAR
125
A
Avalanche Energy L=0.1mH (Note 3)
EAS, EAR
781
mJ
TC=25°C
417
W
Power Dissipation (Note 2)
PD
TC=100°C
208
W
TA=25°C
2.1
W
Power Dissipation (Note 1)
PD
TA=70°C
1.3
W
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP.
MAX.
UNIT
t ≤10s
12
15
°C/W
Junction to Ambient (Note 1)
θJA
Steady-State
48
60
°C/W
Junction to Case (Note 1, 4)
Steady-State
θJC
0.3
0.36
°C/W
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user's specific board design,
and the maximum temperature of 175°C may be used if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is
more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C. Maximum UIS current limited by test equipment.
4. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
5. The maximum current limited by package is 120A.
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UNA06R063H

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IGSS
VGS(TH)
ID(ON)
Static Drain-Source On-Resistance
RDS(ON)
TEST CONDITIONS
VGS=0V, ID=250µA
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=55°C
VGS=±20 V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=10V, ID=20A, TJ=125°C
VDS=5V, ID=20A
2.0
310
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG
ID=20A, VDS=30V, VGS=10V
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=30V, RL=1.5Ω,
Rise Time
tR
RGEN=3Ω
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
(Note)
Diode Forward Voltage
VSD
IS=1A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
QRR
Note: The maximum current limited by package is 120A.
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Copyright © 2015 Unisonic Technologies Co., Ltd
MIN
TYP
2980 3735
605 872
40
69
1.6
3.2
33
280
UNIT
1
5
100
V
µA
µA
nA
4.0
5.5
9.4
53
68
MAX
85
19
24
18
31
60
14
0.7
48
411
6.3
10.8
V
A
mΩ
mΩ
S
4500
1140
98
4.8
pF
pF
pF
Ω
102
nC
nC
nC
ns
ns
ns
ns
178
A
1
63
540
V
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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