Si4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8 0.035 at VGS = 4.5 V 6.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View S Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free) Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.8 6.4 4.6 30 2.3 1.2 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V 8 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 45 50 80 95 16 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71105 S09-0868-Rev. C, 18-May-09 www.vishay.com 1 Si4412ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea a V µA 30 A VGS = 10 V, ID = 8 A 0.020 0.024 VGS = 4.5 V, ID = 6.6 A 0.029 0.035 gfs VDS = 15 V, ID = 8 A 21 VSD IS = 2.3 A, VGS = 0 V 0.75 1.1 16 20 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 10 V, ID = 2 A 0.5 tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 2.0 td(on) Turn-On Delay Time Rise Time nC 3 1.5 15 20 6 12 26 50 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 10 20 IF = 2.3 A, dI/dt = 100 A/µs 40 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 4V 24 VGS = 10 V thru 5 V I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 18 12 TC = - 125 °C 6 3V 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71105 S09-0868-Rev. C, 18-May-09 Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 Ciss 1000 0.04 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.05 VGS = 4.5 V 0.03 VGS = 10 V 0.02 800 600 400 Coss 0.01 200 Crss 0.00 0 0 6 12 18 24 30 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V ID = 2 A VGS = 10 V ID = 8 A 1.6 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 4 2 1.4 1.2 1.0 0.8 0 0 4 8 12 0.6 - 50 16 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.10 30 ID = 3.9 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.08 0.06 0.04 0.02 0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71105 S09-0868-Rev. C, 18-May-09 www.vishay.com 3 Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 0.2 40 0.0 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 -3 Threshold Voltage 10 -2 10 -1 1 Time (s) 10 100 600 Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 t1 t2 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71105. www.vishay.com 4 Document Number: 71105 S09-0868-Rev. C, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000