UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA10R180H
Power MOSFET
42A, 100V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UNA10R180H is an N-Channel enhancement
MOSFET, it uses UTC’s advanced technology to provide customers
with a minimum on-state resistance and high switching speed.
The UTC UNA10R180H is suitable for use in a wide variety of
applications.
FEATURES
* RDS(ON) < 18 mΩ @ VGS=10V, ID=33A
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA10R180HL-TN3-R
UNA10R180HG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDSS
VGSS
RATINGS
100
±20
UNIT
V
V
VGS @ 10V, TC=25°C
56
A
(Silicon Limited)
Continuous VGS @10V, TC=100°C
ID
39
A
Drain Current
VGS @ 10V (Package
42
A
Limited), TC=25°C
220
A
Pulsed (Note 2)
IDM
Single Pulsed Avalanche Energy (Note 3)
EAS (Thermally limited)
150
mJ
Single Pulse Avalanche Energy Tested Value (Note 6)
EAS (Tested )
200
mJ
Avalanche Current (Note 2)
IAR
A
See Test Circuits and
Waveforms
Repetitive Avalanche Energy (Note 5)
EAR
mJ
Power Dissipation (TC=25°C)
140
W
PD
0.95
W/°C
Linear Derating Factor
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. L=0.28mH, IAS=33A, VDD= 10V, RG=25Ω, Starting TJ=25°C
4. ISD≤33A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C
5. Limited by TJmax, see Test Circuits and Waveforms for typical repetitive avalanche performance.
6. This value determined from sample failure population. 100% tested to this value in production.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
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SYMBOL
θJA
θJC
RATINGS
110
1.05
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
∆BVDSS
∆TJ
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
VGS(TH)
∆VGS(th)
∆TJ
RDS(ON)
gFS
CISS
COSS
CRSS
COSS
TEST CONDITIONS
ID=250µA, VGS=0V
MIN
TYP MAX UNIT
100
Reference to 25°C, ID=1mA
V
0.088
VDS=100V, VGS=0V
VDS=100V, VGS=0V , TJ=125°C
VGS=20V
VGS=-20V
VDS=VGS, ID=250µA
2.0
V/°C
20
250
200
-200
µA
µA
nA
nA
4.0
V
ID=250uA, Referenced to 25°C
VGS=10V, ID=33A (Note 2)
VDS=25V, ID=33A
VGS=0V, VDS=25V, f=1.0MHz
VGS=0V, VDS=1.0V, f=1.0MHz
VGS=0V, VDS=80V, f=1.0MHz
VGS=0V, VDS=0V, f=1.0MHz
V/°C
15
39
2930
290
180
1200
180
18
mΩ
S
pF
pF
pF
pF
pF
Ω
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge
QG
69
100 nC
VGS=10V, VDS=30V, ID=1A
Gate to Source Charge
QGS
15
nC
IG=100µA (Note 2)
Gate-to-Drain ("Miller") Charge
QGD
25
nC
Turn-ON Delay Time
tD(ON)
14
ns
Rise Time
tR
43
ns
VDD=30V, VGS=10V, ID=6A,
RG=6.8Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
53
ns
42
ns
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
IS
56
A
(Body Diode)
Pulsed Source Current
ISM
220
A
(Body Diode) (Note 1)
TJ=25°C, IS=33A, VGS=0V
1.3
V
Diode Forward Voltage
VSD
(Note 2)
Reverse Recovery Time
tRR
35
53
ns
TJ=25°C, IS=33A,
di/dt=100A/µs, VDD=50V (Note
Reverse Recovery Charge
41
62
nC
QRR
2)
Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature.
2. Pulse width ≤1.0ms, duty cycle ≤ 2%.
3. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80%
VDSS.
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TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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