Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UPC8131-C
Preliminary
POWER MOSFET
-10A, -30V SILICON
P-CHANNEL MOSFET

DESCRIPTION
The UTC UPC8131-C is a silicon P-channel MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on-state resistance and low leakage current, etc.
The UTC UPC8131-C is suitable for lithium-Ion secondary
batteries and power management switches.

FEATURES
* RDS(ON) < 13.5 mΩ @ VGS=-10V, ID=-5A
* Low RDS(ON)
* Low leakage current

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UPC8131G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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UPC8131-C

Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current(DC) (Note 1)
Drain Current (Pulsed) (Note 1)
RATINGS
UNIT
-30
V
-25/+20
V
-10
A
-30
A
TC=25°C
20
W
Power Dissipation
PD
t=10s (Note 2)
1.9
W
t=10s (Note 3)
0.7
W
Single-Pulse Avalanche Energy (Note 4)
EAS
65
mJ
Avalanche Current
IAR
-10
A
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1a)
Junction-to-Case

SYMBOL
VDSS
VGSS
ID
IDP
SYMBOL
θJA
θJC
RATINGS
53
4.3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage (Note 5)
Drain Cut-Off Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
MIN
BVDSS
BVDSX
IDSS
IGSS
ID=-10mA, VGS=0V
ID=-10mA, VGS=10V
VDS=-30V, VGS=0V
VGS=±20 V, VDS=0V
-30
-21
VTH
VDS=-10V, ID=-0.2mA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-5A
-0.8
RDS(ON)
TYP
13.5
17.6
MAX UNIT
-10
±0.1
V
V
µA
µA
-2.0
17.6
23
V
mΩ
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1700
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
320
Reverse Transfer Capacitance
CRSS
280
SWITCHING PARAMETERS
Total Gate Charge
QG
40
VDD=-24V, VGS=-10V, ID=-10A
Gate to Source Charge
QGS
4.5
Gate to Drain Charge
QGD
11
Turn-ON Delay Time
tD(ON)
14
VGS=10V, VDD=15V, ID=13.3A,
Rise Time
tR
5.2
RGEN=6Ω
Turn-OFF Delay Time
tD(OFF)
170
Fall-Time
tF
52
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Reverse Drain Current (Pulsed) (Note 1)
IDRP
-30
Diode Forward Voltage
VDSF
IDR=-10A, VGS=0V
1.2
Notes: 1. Ensure that the channel temperature does not exceed 150°C.
2. VDD=-24V, TCH=25°C (initial), L=0.5mH, RG=25Ω, IAR=-10A.
3. If a forward bias is applied between gate and source, this device enters BVDSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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