Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UPD02R095L
Power MOSFET
-40A, -20V P-CHANNEL
POWER MOSFET

DESCRIPTION
1
The UTC UPD02R095L is a P-channel MOSFET. it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and high switching speed.
The UTC UPD02R095L is suitable for load switch and battery
protection applications.

DFN-8(5x6)
FEATURES
* RDS(ON) < 9.5mΩ @ VGS=-4.5V, ID=-14A
RDS(ON)<13.5mΩ @ VGS=-2.5V, ID=-13A
RDS(ON)<18mΩ @ VGS=-1.8V, ID=-14A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UPD02R095LG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(5×6)
1
S
2
S
Pin Assignment
3 4 5 6 7 8
S G D D D D
Packing
Tape Reel
S: Source
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-20
V
±8
V
TC=25°C
-40
A
ID
-29
A
TC=100°C
Continuous
Drain Current (Note 7)
TA=25°C
-14.5
A
IDSM
TA=70°C
-11.5
A
Pulsed (Note 3)
IDM
-100
A
Avalanche Current (Note 3)
IAS, IAR
-40
A
Avalanche Energy (Note 3, 5)
EAS
80
mJ
TC=25°C
29
W
PD
Power Dissipation (Note 2)
TC=100°C
12
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
t≤10s (Note 1)
30
40
°C/W
Junction to Ambient
θJA
Steady-State (Note 1, 4)
60
75
°C/W
Junction to Case
Steady-State
θJC
3.5
4.2
°C/W
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum
allowed junction temperature of 150°C. The value in any given application depends on the user's specific
board design.
2 The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more
useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The θJA is the sum of the thermal impedence from junction to case θJC and case to ambient.
5. L=0.1mH, IAS=-40A, VDD=10V, RG=25Ω, Starting TJ=25°C
6. ISD ≤ -40A, di/dt ≤ 200A/μs, VDD≤BVDSS, starting TJ=25°C
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-20
VDS=VGS, ID=250µA
VGS=-4.5V, ID=-14A
VGS=-4.5V, ID=-14A, TJ=125°
VGS=-2.5V, ID=-13A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-14A
-0.3 -0.55
7.6
10.5
9.3
-100
72
-1
-5
+100
-100
V
µA
µA
nA
nA
-0.9 V
9.5 mΩ
13.5 mΩ
12.5 mΩ
A
S
On State Drain Current
ID(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
2795 3495 4195 pF
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
365 528 690 pF
255 425 595 pF
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
2.8 5.6
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
35
44
53 nC
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
9
nC
IG=100µA (Note 1, 2)
11
nC
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
18
ns
VDD=30V, ID=0.5A, RG=25Ω
Rise Time
tR
32
ns
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
136
ns
Fall-Time
tF
59
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-35
A
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-0.52 -1
V
Body Diode Reverse Recovery Time
tRR
26
33
40
ns
IF=-14A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
80 100 120 nC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
4. These curves are based on the junction-to-case thermal impedence which is measured with the device
mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve
provides a single pulse rating.
5. The maximum current rating is package limited.
6. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C.
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
Time
Unclamped Inductive Switching Waveforms
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UPD02R095L
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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UPD02R095L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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