UNISONIC TECHNOLOGIES CO., LTD Preliminary UPD02R095L Power MOSFET -40A, -20V P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UPD02R095L is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed. The UTC UPD02R095L is suitable for load switch and battery protection applications. DFN-8(5x6) FEATURES * RDS(ON) < 9.5mΩ @ VGS=-4.5V, ID=-14A RDS(ON)<13.5mΩ @ VGS=-2.5V, ID=-13A RDS(ON)<18mΩ @ VGS=-1.8V, ID=-14A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Note: UPD02R095LG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) 1 S 2 S Pin Assignment 3 4 5 6 7 8 S G D D D D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R210-015.a UPD02R095L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -20 V ±8 V TC=25°C -40 A ID -29 A TC=100°C Continuous Drain Current (Note 7) TA=25°C -14.5 A IDSM TA=70°C -11.5 A Pulsed (Note 3) IDM -100 A Avalanche Current (Note 3) IAS, IAR -40 A Avalanche Energy (Note 3, 5) EAS 80 mJ TC=25°C 29 W PD Power Dissipation (Note 2) TC=100°C 12 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT t≤10s (Note 1) 30 40 °C/W Junction to Ambient θJA Steady-State (Note 1, 4) 60 75 °C/W Junction to Case Steady-State θJC 3.5 4.2 °C/W Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2 The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 4. The θJA is the sum of the thermal impedence from junction to case θJC and case to ambient. 5. L=0.1mH, IAS=-40A, VDD=10V, RG=25Ω, Starting TJ=25°C 6. ISD ≤ -40A, di/dt ≤ 200A/μs, VDD≤BVDSS, starting TJ=25°C UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R210-015.a UPD02R095L Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=+8V, VDS=0V VGS=-8V, VDS=0V -20 VDS=VGS, ID=250µA VGS=-4.5V, ID=-14A VGS=-4.5V, ID=-14A, TJ=125° VGS=-2.5V, ID=-13A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-14A -0.3 -0.55 7.6 10.5 9.3 -100 72 -1 -5 +100 -100 V µA µA nA nA -0.9 V 9.5 mΩ 13.5 mΩ 12.5 mΩ A S On State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 2795 3495 4195 pF VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS 365 528 690 pF 255 425 595 pF Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz 2.8 5.6 Ω SWITCHING PARAMETERS Total Gate Charge QG 35 44 53 nC VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS 9 nC IG=100µA (Note 1, 2) 11 nC Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 18 ns VDD=30V, ID=0.5A, RG=25Ω Rise Time tR 32 ns (Note 1, 2) Turn-OFF Delay Time tD(OFF) 136 ns Fall-Time tF 59 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS -35 A Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V -0.52 -1 V Body Diode Reverse Recovery Time tRR 26 33 40 ns IF=-14A, dI/dt=100A/µs Body Diode Reverse Recovery Charge QRR 80 100 120 nC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 3. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 4. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 5. The maximum current rating is package limited. 6. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R210-015.a UPD02R095L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R210-015.a UPD02R095L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD Time Unclamped Inductive Switching Waveforms 5 of 7 www.unisonic.com.tw QW-R210-015.a UPD02R095L Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6 of 7 www.unisonic.com.tw QW-R210-015.a UPD02R095L Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R210-015.a