Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UDA03R075M
Preliminary
POWER MOSFET
30V DUAL N-CHANNEL
POWERTRENCH MOSFET

DESCRIPTION
1
The UTC UDA03R075M is a dual N-Channel PowerTrench
MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance, etc.
The UTC UDA03R075M is suitable for computing, general
purpose point of load and notebook VCORE, etc.

TDFN-8(5x6)
FEATURES
Q1: N-Channel
* RDS(ON) < 7.5 mΩ @ VGS=10V, ID=12A
RDS(ON) < 12.4 mΩ @ VGS=4.5V, ID=10A
Q2: N-Channel
* RDS(ON) < 5.5 mΩ @ VGS=10V, ID=16A
RDS(ON) < 7.0 mΩ @ VGS=4.5V, ID=14A

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
1
UDA03R075MG-TK08-5060-R
TDFN-8(5×6) G1
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
2
D1
Pin Assignment
3
4
5
6
D1 D1 S2 S2
7
S2
8
G2
Packing
Tape Reel
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UDA03R075M

MARKING

PIN CONFIGURATION
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
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Power MOSFET
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise noted)
RATINGS
UNIT
Q1
Q2
Drain-Source Voltage
VDSS
30
30
V
Gate-Source Voltage (Note 3)
VGSS
±20
±20
V
TC=25°C
32
30
A
ID
Continuous
Drain Current
TA=25°C
12 (Note 1a)
16 (Note 1b)
A
Pulsed
IDP
60
60
A
Power Dissipation for Single Operation TA=25°C
2.5 (Note 1a)
W
PD
(Note 1)
1.0 (Note 1b)
W
TA=25°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Q1
Q2
UNIT
°C/W
°C/W
Junction to Case
θJC
3
1.2
°C/W
Notes: 1. θJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4
material. θJC is guaranteed by design while θCA is determined by the user's board design.
2. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 120°C/W when mounted on a 1 in2 pad of 2 oz copper
Junction to Ambient
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θJA
50 (Note 1a)
120 (Note 1b)
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted.)
Q1
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current Forward
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State
Resistance
SYMBOL
BVDSS
∆BVDSS
∆TJ
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VGS=±20V, VDS=0V
VGS(TH)
∆BVGS( TH)
VGS=VDS, ID=250µA
RDS(ON)
TYP
MAX UNIT
30
ID=250µA, Referenced to 25°C
IDSS
IGSS
∆TJ
MIN
V
35
1
1.5
ID=250µA, Referenced to 25°C
-4.5
VGS=10V, ID=12A
VGS=4.5V, ID=10A
VGS=10V, ID=12A, TJ=125°C
VDD=10V, ID=12A
9.2
8.6
54
mV/°C
1
±100
µA
nA
3
V
mV/°C
7.5
12.4
13
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
1280 1705 pF
VDS=15V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
525 700
pF
80
120
pF
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1MHz
1.0
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
9
13
nC
VDS= 50V, ID= 1.3A,
Gate to Source Charge
QGS
3
nC
VGS= 10 V (Note 1, 2)
Gate to Drain Charge
QGD
2.7
nC
Turn-ON Delay Time
tD(ON)
13
23
ns
VDD = 30V, ID = 0.5A,
Rise Time
tR
6
12
ns
RG = 25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
42
67
ns
Fall-Time
tF
12
22
ns
SOURCE TO DRAIN DIODE SPECIFICATIONS
Continuous Drain-Source Diode Forward
IS
2.1
A
Current
Source to Drain Diode Forward Voltage
VSD
VGS=0V, IS=2.1A (Note 2)
0.7
1.2
V
Reverse Recovery Time
trr
33
ns
IF=12A, di/dt=100A/µs
20
nC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2.0%.
2. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous
rating is implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
Q2
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current Forward
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State
Resistance
SYMBOL
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
VGS(TH)
∆BVGS( TH)
∆TJ
RDS(ON)
TEST CONDITIONS
ID=1mA, VGS=0V
MIN
TYP
30
ID=1mA, Referenced to 25°C
V
29
VDS=24V, VGS=0V
VGS=±20V, VDS=0V
VGS=VDS, ID=1mA
MAX UNIT
1
1.8
ID=1mA, Referenced to 25°C
-6.0
VGS=10V, ID=16A
VGS=4.5V, ID=14A
VGS=10V, ID=16A, TJ=125°C
VDD=10V, ID=16A
4.5
5.3
5.4
68
mV/°C
500
±100
µA
nA
3
V
mV/°C
5.5
7.0
8.3
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
2300 3060 pF
VDS=15V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
1545 2055 pF
250 375
pF
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1MHz
1.7
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
21
29
nC
VDD=15V, VGS=4.5V, ID=16A
Gate to Source Charge
QGS
8
nC
Gate to Drain Charge
QGD
6.5
nC
Turn-ON Delay Time
tD(ON)
17
31
ns
VDD=10V, VGS=10V, ID=1A,
Rise Time
tR
11
20
ns
RG=6Ω
Turn-OFF Delay Time
tD(OFF)
54
86
ns
Fall-Time
tF
32
51
ns
SOURCE TO DRAIN DIODE SPECIFICATIONS
Continuous Drain-Source Diode Forward
IS
3.5
A
Current
Source to Drain Diode Forward Voltage
VSD
VGS=0V, IS=3.5A (Note 2)
0.4
1.0
V
Reverse Recovery Time
trr
27
ns
IF=16A, di/dt=100A/µs
33
nC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width<300μs, Duty cycle<2.0%.
2. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous
rating is implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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