UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA03R085M Power MOSFET 13.3A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA03R085M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switch speed and low gate charge. The UTC UNA03R085M is suitable for notebook battery power management and DC-DC buck converters. FEATURES * RDS(ON) < 8.5mΩ @ VGS=10V, ID=13.3A RDS(ON) < 14mΩ @ VGS=4.5V, ID=10.6A * High switch speed * Low gate charge SYMBOL Drain(5)(6)(7)(8) (4) Gate Source(1)(2)(3) ORDERING INFORMATION Ordering Number Note: UNA03R085MG-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-093.a UNA03R085M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous (Package limited) TC=25°C 16 A ID Drain Current 13.3 A Continuous TA=25°C (Note 1a) 40 A Pulsed IDM Single Pulse Avalanche Energy (Note 2) EAS 58 mJ TC=25°C 29 W Power Dissipation PD TA=25°C (Note 1a) 2.3 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1a) θJA 53 °C/W Junction-to-Case θJC 4.3 °C/W 2 Notes: 1. θJA is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. θJC is guaranteed by design while θCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b.125°C/W when mounted on a minimum pad of 2 oz copper. 2. EAS of 58mJ is based on starting TJ=25°C, L=1mH, IAS=10.8A, VDD=27V, VGS=10V. 100% test at L=0.1mH, IAS=21A. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-093.a UNA03R085M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Breakdown Voltage Temperature Coefficient BVDSS ∆BVDSS ∆TJ Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Forward ON CHARACTERISTICS Gate Threshold Voltage IGSS Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance VGS(TH) ∆VGS(th) ∆TJ RDS(ON) TEST CONDITIONS ID=1mA, VGS=0V www.unisonic.com.tw 30 ID=250uA, Referenced to 25°C V 16 VDS=24V, VGS=0V VDS=24V, VGS=0V, TJ=125°C VGS=20V, VDS=0V VDS=VGS, ID=250uA 1.2 1.9 mV/°C 1 250 100 µA µA nA 3.0 V ID=250uA, Referenced to 25°C -6 VGS=10V, ID=13.3A VGS=4.5V, ID=10.6A VDD=5V, ID=13.3A 7.2 9.5 60 8.5 14 mΩ mΩ S 1260 480 65 0.9 1680 635 100 2.4 pF pF pF Ω 4 21 3 9 4 21 3 10 33 10 18 10 33 10 nC nC nC ns ns ns ns 1.9 A 1.2 1.2 38 14 V V ns nC Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG SWITCHING PARAMETERS Total Gate Charge QG VGS=0V~4.5V, VDD=15V, ID=13.3A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDD=15V, ID=13.3A, Rise Time tR RGEN=6Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current (Note) VGS=0V, IS=13.3A (Note 2) Source to Drain Diode Forward Voltage VSD VGS=0V, IS=1.9A (Note 2) Reverse Recovery Time trr IF=13.3A, di/dt=100A/µs Reverse Recovery Charge Qrr Note: Pulse Test: Pulse width < 300μs, Duty cycle < 2.0%. UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 0.86 0.75 24 7 mV/°C 3 of 6 QW-R209-093.a UNA03R085M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-093.a UNA03R085M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-093.a UNA03R085M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-093.a