Data Sheet

BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 29 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC standard for use in Automotive critical
applications.
1.2 Features
n Very low on-state resistance
n 175 °C rated
n Q101 compliant
n Standard level compatible
1.3 Applications
n Automotive systems
n Motors, lamps and solenoids
n General purpose power switching
n 12 V and 24 V loads
1.4 Quick reference data
n EDS(AL)S ≤ 351 mJ
n ID ≤ 75 A
n RDSon = 5.8 mΩ (typ)
n Ptot ≤ 203 W
2. Pinning information
Table 1.
Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base; connected to drain (D)
Simplified outline
Symbol
mb
D
G
mbb076
1 2 3
SOT226 (I2PAK)
S
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
BUK7E07-55B
Package
Name
Description
Version
I2PAK
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
drain-source voltage
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage
drain current
ID
Conditions
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
[1]
Min Max
Unit
-
55
V
-
55
V
-
±20
V
-
119
A
75
A
-
75
A
[2]
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2]
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
478
A
Tmb = 25 °C; see Figure 1
-
203
W
Ptot
total power dissipation
Tstg
storage temperature
−55 +175 °C
Tj
junction temperature
−55 +175 °C
Source-drain diode
IDR
reverse drain current
Tmb = 25 °C
-
75
A
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
478
A
-
351
mJ
-
-
[2]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche
energy
Unclamped inductive load; ID = 75 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting at
Tj = 25 °C
EDS(AL)R
repetitive drain-source avalanche
energy
Repetitive rating defined in Figure 16
[1]
Current is limited by chip power dissipation rating.
[2]
Continuous current is limited by package.
[3]
Conditions:
a) Maximum value not quoted.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
BUK7E07-55B_1
Product data sheet
[3]
J
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
2 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab844
120
003aac120
120
Pder
(%)
ID
(A)
80
80
40
40
0
(1)
0
0
50
100
150
200
0
50
100
Tmb (°C)
200
Tmb (°C)
VGS ≥ 10 V
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
(1) Capped at 75 A due to package.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aac121
103
ID
(A)
150
tp = 10 µs
Limit RDSon = VDS / ID
102
100 µs
(1)
1 ms
10
10 ms
DC
100 ms
1
10−1
1
102
10
VDS (V)
Tmb = 25 °C; IDM is single pulse.
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
3 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to mounting base -
-
-
0.74
K/W
thermal resistance from junction to ambient
-
60
-
K/W
vertical in still air
003aac122
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
δ=
P
10−2
tp
T
single pulse
t
tp
10−3
10−6
T
10−5
10−4
10−3
10−2
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
4 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
55
-
-
V
Tj = −55 °C
50
-
-
V
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
gate-source threshold voltage
drain leakage current
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
VDS = 55 V; VGS = 0 V
Tj = 25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
VGS = ±20 V; VDS = 0 V
IGSS
gate leakage current
RDSon
drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
-
5.8
7.1
mΩ
Tj = 175 °C
-
-
14.2
mΩ
-
53
-
nC
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 44 V; VGS = 10 V;
see Figure 14
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
LD
internal drain inductance
measured from drain lead 6 mm from
package to centre of die
LS
internal source inductance
measured from source lead
-
12
-
nC
-
17
-
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
-
2820
3760
pF
-
554
665
pF
-
200
274
pF
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
24
-
ns
-
52
-
ns
-
77
-
ns
-
41
-
ns
-
4.5
-
nH
-
7.5
-
nH
0.85
1.2
V
to source bond pad
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 15
-
trr
reverse recovery time
62
-
ns
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
-
Qr
-
60
-
nC
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
5 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac123
300
20 10
9.0
RDSon
(mΩ)
VGS (V) = 8.5
ID
(A)
003aac124
25
20
8.0
200
7.5
15
7.0
10
6.5
100
6.0
5.5
5
5.0
4.5
0
0
0
2
4
6
8
10
VDS (V)
5
15
20
VGS (V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aac125
25
RDSon
(mΩ)
10
003aab906
2
a
VGS (V) = 6.0
6.5
20
7.0
1.5
7.5
8.0
9.0
15
1
10
10
0.5
5
0
0
100
200
300
0
−60
0
Tj = 25 °C
120
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7E07-55B_1
Product data sheet
60
Tj (°C)
ID (A)
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
6 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab852
5
003aab853
10−1
ID
(A)
VGS(th)
(V)
4
3
typ
max
10−3
typ
2
min
10−2
max
10−4
min
10−5
1
0
−60
10−6
0
60
120
160
0
2
4
Tj (°C)
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aac126
60
003aac127
4
C
(nF)
gfs
(S)
Ciss
3
40
2
Coss
20
1
Crss
0
0
25
50
75
100
0
10−2
10−1
ID (A)
Tj = 25 °C; VDS = 25 V
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7E07-55B_1
Product data sheet
1
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
7 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac128
100
003aac129
10
VGS
(V)
ID
(A)
VDD = 14 V
8
VDD = 44 V
75
6
50
4
25
Tj = 175 °C
Tj = 25 °C
2
0
0
0
2
4
6
8
0
20
40
VGS (V)
60
QG (nC)
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aac130
100
IS
(A)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aac131
102
IAL
(A)
(1)
75
10
(2)
50
Tj = 175 °C
Tj = 25 °C
(3)
1
25
0
0.0
0.5
1.0
1.5
10−1
10−3
10−2
10−1
VSD (V)
VGS = 0 V
1
10
tAL (ms)
See Table note 3 of Table 3 Limiting values.
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
8 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
A
A1
E
D1
mounting
base
D
L1
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
max
D1
E
e
L
L1
Q
mm
4.5
4.1
1.40
1.27
0.85
0.60
1.3
1.0
0.7
0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
JEITA
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
05-06-23
06-02-14
Fig 17. Package outline SOT226 (I2PAK)
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
9 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7E07-55B_1
20080129
Product data
-
-
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
10 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK7E07-55B_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 29 January 2008
11 of 12
BUK7E07-55B
NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 January 2008
Document identifier: BUK7E07-55B_1
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