UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA03R100M Power MOSFET 22A, 30V N- CHANNEL POWERTRENCH MOSFET DESCRIPTION 1 The UTC UNA03R100M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, low gate charge and high switching speed, etc. The UTC UNA03R100M is suitable for IMVP Vcore switching for notebook, OringFET / load switching and DC-DC conversion, etc. DFN-8(5x6) FEATURES * RDS(ON) < 10 mΩ @ VGS = 10V, ID = 13.5A RDS(ON) < 15 mΩ @ VGS = 4.5V, ID = 11.0A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UNA03R100MG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) 1 S 2 S Pin Assignment 3 4 5 6 7 8 S G D D D D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-094.a UNA03R100M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage (Note 6) VGSS ±20 V Continuous (Package limited) 22 A TC=25 °C ID Continuous (Silicon limited) Drain Current 44 A TC=25 °C 13.5 A Continuous TA=25°C (Note 5a) 50 A Pulsed IDM Single Pulse Avalanche Energy (Note 3) EAS 29 mJ TC=25 °C 29 W PD Power Dissipation TA=25°C (Note 5a) 2.5 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. L=0.3mH, IAS=14A, VDD=27V, RG=25Ω, Starting TJ = 25°C 4. ISD ≤ 13.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. θJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. θJC is guaranteed by design while θJA is determined by the user's board design. (a) 50°C when mounted on a 1 in2 pad of 2 oz copper. (b) 125°C/W when mounted on a minimum pad of 2 oz copper. 6. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous rating is implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient (Note 5a) Junction-to-Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 50 4.4 UNIT °C/W °C/W 2 of 6 QW-R209-094.a UNA03R100M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(TH) ∆BVGS( th ) ∆TJ RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V www.unisonic.com.tw 30 ID=250µA, Referenced to 25°C V VDS=VGS, ID=250µA mV/° C 16 VDS=24V, VGS=0V VGS=20V, VDS=0V 1.0 2.0 ID=250µA, Referenced to 25°C -6 VGS=10V, ID=13.5A VGS=4.5V, ID=11.0A VGS=10V, ID=13.5A, TJ=125°C VDD=5V, ID=13.5A 8.1 12.2 11 53 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=30V, ID=0.5A Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDD=30V, ID=0.5A, Rise Time tR RGEN=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Source to Drain Diode Forward Voltage VGS=0V, IS=2.1A VSD (Note) VGS=0V, IS=13.5A Reverse Recovery Time trr IF=13.5A, di/dt=100A/µS Reverse Recovery Charge Qrr Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2.0%. UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 0.3 385 135 3.4 1.6 1 100 µA nA 3.0 V mV/° C 10 15 14 3.2 80 3.6 7.2 36 55 256 150 mΩ mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns A 0.75 0.86 24 8 1.1 1.2 38 15 V V ns nC 3 of 6 QW-R209-094.a UNA03R100M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-094.a UNA03R100M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-094.a UNA03R100M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-094.a