Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA03R190M
Power MOSFET
15A, 30V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UNA03R190M is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switch speed and low gate charge.
The UTC UNA03R190M is suitable for notebook battery power
management and DC-DC buck converters.

FEATURES
* RDS(ON) < 19mΩ @ VGS=10V, ID=9A
RDS(ON) < 25mΩ @ VGS=4.5V, ID=7.2A
* High switch speed
* Low gate charge

SYMBOL
(5)(6)(7)(8) Drain
(4) Gate
(1)(2)(3) Source

ORDERING INFORMATION
Ordering Number
Note:

UNA03R190MG-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
30
V
±20
V
TC=25°C
15
A
Continuous
ID
Drain Current
TA=25°C (Note 1a)
9.0
A
40
A
Pulsed
IDM
Single Pulse Avalanche Energy (Note 2)
EAS
24
mJ
TC=25°C
18
W
Power Dissipation
PD
TA=25°C (Note 1a)
2.3
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1a)
θJA
53
°C/W
Junction-to-Case
θJC
6.6
°C/W
2
Notes: 1. θJA is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4
material. θJC is guaranteed by design while θCA is determined by the user's board design.
(a) 53°C/W when mounted on a 1 in2 pad of 2 oz copper.
(b) 125°C/W when mounted on a minimum pad of 2 oz copper.
2. L=1mH, IAS=7A, VDD= 30V, RG=25Ω, Starting TJ=25°C
3. ISD≤75A, di/dt≤450A/μs, VDD≤BVDSS, starting TJ=25°C
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
Breakdown Voltage Temperature
Coefficient
BVDSS
∆BVDSS
∆TJ
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
IGSS
VGS(TH)
∆VGS(th)
∆TJ
RDS(ON)
TEST CONDITIONS
ID=250uA, VGS=0V
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TYP MAX UNIT
30
ID=250uA, Referenced to 25°C
V
22
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250uA
1.4
1.9
mV/°C
1
250
+100
-100
µA
µA
nA
nA
2.5
V
ID=250uA, Referenced to 25°C
-6
VGS=10V, ID=9.0A
VGS=4.5V, ID=7.2A
VDD=5V, ID=9A
16
22
24
19
25
mΩ
mΩ
S
513
110
76
1.4
685
150
115
2.1
pF
pF
pF
Ω
5.0
1.8
2.2
6
2
15
2
7.0
12
10
27
10
nC
nC
nC
ns
ns
ns
ns
1.6
A
1.2
1.2
18
10
V
V
ns
nC
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
Gate to Source Charge
QGS
VGS=10V (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDS=30V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
VGS=0V, IS=9.0A (Note 2)
Source to Drain Diode Forward Voltage
VSD
VGS=0V, IS=1.6A (Note 2)
Reverse Recovery Time
trr
IF=9.0A, di/dt=100A/µs
Reverse Recovery Charge
Qrr
Note: Pulse Test: Pulse width < 300μs, Duty cycle < 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
MIN
0.86
0.76
13
3
mV/°C
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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