Data Sheet

BUK9107-40ATC
N-channel TrenchPLUS logic level FET
Rev. 04 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Electrical Power Assisted Steering
(EPAS)
„ Automotive and general purpose
power switching
„ Protected drive for lamps
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
ID
drain current
VGS = 5 V; Tmb = 25 °C; see Figure 2;
see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
Tj
junction temperature
RDSon
drain-source on-state
resistance
[1]
Min
Typ
Max
Unit
-
-
140
A
-
-
272
W
-55
-
175
°C
VGS = 10 V; ID = 50 A; Tj = 25 °C
-
5.2
6.2
mΩ
VGS = 4.5 V; ID = 50 A; Tj = 25 °C
-
6
7.7
mΩ
VGS = 5 V; ID = 50 A; Tj = 25 °C;
see Figure 7; see Figure 8
-
5.8
7
mΩ
SF(TSD)
temperature sense diode
temperature coefficient
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-1.4
-1.54
-1.68
mV/K
VF(TSD)
temperature sense diode
forward voltage
IF = 250 µA; Tj = 25 °C
648
658
668
mV
[1]
Current is limited by power dissipation chip rating.
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
1
G
gate
2
A
anode
3
D
drain
4
K
cathode
5
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
d
a
s
k
g
3
1 2
45
MBL306
SOT426
(D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK9107-40ATC D2PAK
plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
BUK9107-40ATC_4
Product data sheet
Version
SOT426
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
2 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C;
VGS
gate-source voltage
ID
drain current
Min
Max
Unit
[1]
-
40
V
[1]
-15
15
V
Tmb = 25 °C; VGS = 5 V; see Figure 2; see Figure 3 [2]
-
140
A
Tmb = 25 °C; VGS = 5 V; see Figure 2; see Figure 3 [3]
-
75
A
Tmb = 100 °C; VGS = 5 V; see Figure 2
-
75
A
[3]
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
560
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
-
272
W
IDG(CL)
drain-gate clamping
current
pulsed; tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping
current
pulsed; tp = 5 ms; δ = 0.01
-
50
mA
continuous
-
10
mA
Visol(FET-TSD)
FET to temperature
sense diode isolation
voltage
-100
100
V
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
VDGS
drain-gate voltage
IDG = 250 µA;
[1]
-
40
V
Tmb = 25 °C;
[2]
-
140
A
Tmb = 25 °C;
[3]
-
75
A
Source-drain diode
IS
ISM
source current
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
560
A
non-repetitive
drain-source clamping
energy
ID = 75 A; VDS ≤ 40 V; VGS = 5 V; RGS = 10 kΩ;
unclamped; Tj(init) = 25 °C
-
1.4
J
-
6
kV
Clamping
EDS(CL)S
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ; pins 1, 3, 5
voltage
[1]
Voltage is limited by clamping.
[2]
Current is limited by power dissipation chip rating.
[3]
Continuous current is limited by package.
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
3 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
03na19
120
03ne74
150
ID
(A)
125
Pder
(%)
100
80
75
Capped at 75 A due to package
50
40
25
0
0
0
50
100
150
25
200
50
75
100
125
150
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
175
200
Tmb (oC)
Normalized continuous drain current as a
function of mounting base temperature
03ne75
103
ID
(A)
tp = 10 µs
Limit RDSon = VDS/ID
100 µs
102
1 ms
Capped at 75 A due to package
DC
10 ms
10
100 ms
1
1
102
10
VDS (V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
4 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-mb)
Conditions
Min
Typ
Max
Unit
thermal resistance from mounted on printed-circuit board;
junction to ambient
minimum footprint
-
-
50
K/W
thermal resistance from see Figure 4
junction to mounting
base
-
-
0.55
K/W
03ne76
1
10-1
δ 10-2
δ=
P
tp
T
t
tp
T
10-3
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
5 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
drain-gate (Zener
diode) breakdown
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
40
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
40
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
1
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
Typ
Max
Unit
-
-
V
-
-
V
1.5
2
V
0.5
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
2.3
V
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.1
100
µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
-
250
µA
12
15
-
V
IG = -1 mA; VDS = 0 V; Tj > -55 °C;
Tj < 175 °C
12
15
-
V
Static characteristics
V(BR)DG
VGS(th)
IDSS
V(BR)GSS
drain leakage current
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C;
voltage
Tj < 175 °C
IGSS
gate leakage current
VDS = 0 V; VGS = 5 V; Tj = 25 °C
-
5
1000
nA
VDS = 0 V; VGS = -5 V; Tj = 25 °C
-
5
1000
nA
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 A; Tj = 25 °C;
see Figure 7; see Figure 8
-
5.8
7
mΩ
VGS = 5 V; ID = 50 A; Tj = 175 °C;
see Figure 7; see Figure 8
-
-
14
mΩ
VGS = 4.5 V; ID = 50 A; Tj = 25 °C
-
6
7.7
mΩ
VGS = 10 V; ID = 50 A; Tj = 25 °C
-
5.2
6.2
mΩ
VF(TSD)
temperature sense
diode forward voltage
IF = 250 µA; Tj = 25 °C
648
658
668
mV
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-1.4
-1.54
-1.68
mV/K
VF(TSD)hys
temperature sense
diode forward voltage
hysteresis
IF > 125 µA; IF < 250 µA; Tj = 25 °C
25
32
50
mV
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
-
5836
-
pF
-
958
-
pF
-
595
-
pF
-
3
-
µs
-
10
-
µs
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
17
-
µs
tf
fall time
-
11
-
µs
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 1 kΩ; Tj = 25 °C
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
6 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
LD
internal drain
inductance
measured from upper edge of drain
mounting base to centre of die; Tj = 25 °C
-
2.5
-
nH
LS
internal source
inductance
measured from source lead to source
bond pad; Tj = 25 °C
-
7.5
-
nH
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 19
-
0.85
1.2
V
trr
reverse recovery time
-
85
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
-
250
-
nC
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
7 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
03ne77
ID 400
(A)
350
03ne79
25
4.6
4.4
V GS = 5 V
RDSon
(mΩ)
4.2
6
20
300
4
10
250
3.8
15
3.6
200
3.4
150
10
3.2
3
100
5
2.8
50
2.6
2.4
2.2
0
0
Fig 5.
2
4
6
8
0
10
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
2
Fig 6.
4
6
8 V
10
GS (V)
Drain-source on-state resistance as a function
of gate-source volatage; typical values
03ne89
2
03ne78
16
RDSon
a
VGS = 3 V
(mΩ)
3.6
3.2
14
3.8
1.5
4
3.4
12
1
10
0.5
5
8
10
0
-60
6
0
Fig 7.
50
100
150
200
60
120
Tj (°C)
180
250
300
ID (A)
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK9107-40ATC_4
Product data sheet
0
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
8 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
03na17
2.5
VGS(th)
(V)
2
(A)
max
10-2
typ
10-3
1.5
min
1
10-4
0.5
10-5
min
typ
max
10-6
0
-60
Fig 9.
03na18
10-1
I
D
-20
20
60
100
140
180
Tj (oC)
Gate-source threshold voltage as a function of
junction temperature
03ne81
gfs140
(S)
120
0
0.5
1
1.5
2
2.5
3
V
(V)
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03ne86
16000
C (pF)
14000
12000
100
10000
80
8000
60
6000
40
4000
20
2000
0
0
Ciss
Coss
0
20
40
60
80 I (A) 100
D
Fig 11. Forward transconductance as a function of
drain current; typical values
10-2
1
10
VDS (V)
Crss
102
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9107-40ATC_4
Product data sheet
10-1
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
9 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
03ne80
100
ID
03ne87
5
V
GS
(V)
(A)
80
4
60
3
V DS = 14 V
Tj = 175 ºC
V DS = 35 V
40
2
20
1
Tj = 25 ºC
0
0
0.0
1.0
2.0
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03ne82
51
VDSR(CL)
(V)
0
VGS (V) 3.0
Tj = 175 ºC
20
40
60
80
100
120
QG(nC)
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
03ne83
54
V
DSR(CL)
(V)
52
50.5
Tj = -55 ºC
Tj = 25 ºC
Tj = 175 ºC
50
50
48
Tj = 25 ºC
46
49.5
Tj = -55 ºC
44
49
42
40
48.5
0
2
4
6
8
ID (A)
10
Fig 15. Drain-source clamping voltage as a function of
drain current; typical values
0
2
-IGS(CL) (mA)
3
Fig 16. Drain-source clamping voltage as a function of
gate current; typical values
BUK9107-40ATC_4
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
10 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
03ne84
700
03ne85
−1.70
max
SF
(mV/K)
VF
(mV)
−1.60
600
typ
−1.50
500
min
−1.40
645
400
0
50
100
150
200
655
665
675
VF (mV)
Tj (°C)
Fig 17. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values
Fig 18. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values
03ne88
100
IS
(A)
80
Tj = 175 ºC
60
40
Tj = 25 ºC
20
0
0.0
0.5
1.0
VSD (V)
1.5
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
11 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-03-09
06-03-16
SOT426
Fig 20. Package outline SOT426 (D2PAK)
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
12 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9107-40ATC_4
20090216
Product data sheet
-
BUK9107_40ATC-03
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BUK9107_40ATC-03
(9397 750 08724)
20020122
Product data sheet
-
BUK9107_40ATC-02
BUK9107_40ATC-02
(9397 750 08709)
20010829
Product data sheet
-
BUK9107_40ATC-01
BUK9107_40ATC-01
(9397 750 08319)
20010814
Product data sheet
-
-
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
13 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK9107-40ATC_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 February 2009
14 of 15
BUK9107-40ATC
NXP Semiconductors
N-channel TrenchPLUS logic level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: Rev. 04 — 16 February 2009
Document identifier: BUK9107-40ATC_4
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