Product Brief CoolSiC™ MOSFET. Revolution to rely on. Infineon’s CoolSiC™ technology enables radical new product designs. Silicon Carbide (SiC) opens up new degrees of freedom for designers to harness never before seen levels of efficiency and system flexibility. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristics. Infineon’s unique 1200 V SiC MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on. All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS converters, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability. 4 4 Turn-Off losses Eoff @ 800 V, RG=2.2 Ω, VGE/GS=-5/15 V Eoff Eoff/ mJ / mJ 3 3 10x 10x lower lower E Eoff off 2 2 4 4 Eon Eon/ mJ / mJ 20 20 10 10 ID / A ID / A 30 30 40 40 2x 2x lower lower E Eon on 2 2 1 1 10 10 CoolSiC™ MOSFET, 45 mΩ, 25°C CoolSiC™ MOSFET, 45 mΩ, 175°C 20 20 ID / A ID / A 30 30 40 40 Highspeed 3 Si IGBT 40 A, 25°C Highspeed 3 Si IGBT 40 A, 175°C Note: SiC FWD diode used during testing www.infineon.com/coolsic Best in class system performance ››Highest efficiency for reduced cooling effort ››Longer lifetime and higher reliability ››Higher frequency operation ››Reduction in system cost ››Increased in power density ››Reduced system complexity ››Ease of design and implementation ››IGBT compatible driving (+15 V/-5 V) Turn-On losses Eon @ 800 V, RG=2.2 Ω, VGE/GS=-5/15 V 3 3 0 0 Unique SiC MOSFET characteristics over traditional 1200 V silicon devices ››Low Qg and device capacitances ››Zero reverse recovery losses of body diode ››Temperature independent switching losses ››Threshold-free on-state characteristic compared to IGBT Infineon’s unique SiC MOSFET advantage over SiC competition ››Superior gate oxide reliability ››Best in class switching and conduction losses ››Higher transconductance (gain) ››Threshold voltage, Vth = 4 V ››Short-circuit robustness Key benefits 1 1 0 0 Key features Storage Product Brief CoolSiC™ MOSFET. Revolution to rely on. CoolSiC™ MOSFET first products are targeted for photovoltaic inverters, battery charging and energy storage. TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. Easy1B modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections. 1EDI EiceDRIVER™ Compact – perfect fit to CoolSiC™ MOSFET Lead products Schematic Type Single switch Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2016 Infineon Technologies AG. All Rights Reserved. Drain IMW120R045M1 Gate Package 45 mOhm 1200 V Source Single switch TO247-4pin Drain Gate Driver Source IMZ120R045M1 45 mOhm 1200 V FF11mR12W1M1_B11 11 mOhm 1200 V FF23mR12W1M1_B11 23 mOhm 1200 V DF11mR12W1M1_B11 11 mOhm 1200 V DF23mR12W1M1_B11 23 mOhm 1200 V Power Source Half bridge with NTC Booster with NTC Easy1B PressFIT Selectively sampling on request. Drivers for lead products +3V3 VCC1 VCC2 100n SGND IN GND1 OUT+ IN+ OUT- IN- GND2 Type +15V 4µ7 2R2 Peak current 1EDI20H12AH 2A 1EDI60H12AH 6A 1EDI20N12AF 2A 1EDI60N12AF 6A 3R3 0V 4µ7 -5V Package 300 mil 150 mil Selectively sampling on request. Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Order Number: B133-I0286-V1-7600-EU-EC-P Date: 05 / 2016 VDS TO247-3pin Application example Suited for applications up to 1200 V, these galvanically isolated gate driver ICs are based on our coreless transformer technology, which enables an minimum common mode transient immunity (CMTI) of 100 kV/µs. RDSON Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.