CoolSiC™ MOSFET. Revolution to rely on.

Product Brief
CoolSiC™ MOSFET. Revolution to rely on.
Infineon’s CoolSiC™ technology enables radical new product designs.
Silicon Carbide (SiC) opens up new degrees of freedom for designers to harness never
before seen levels of efficiency and system flexibility. In comparison to traditional silicon
(Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
These include, the lowest gate charge and device capacitance levels seen in 1200 V switches,
no reverse recovery losses of the internal commutation proof body diode, temperature
independent low switching losses, and threshold-free on-state characteristics.
Infineon’s unique 1200 V SiC MOSFET adds additional advantages. Superior gate oxide
reliability enabled by state-of-the-art trench design, best in class switching and
conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V
and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like
LLC and ZVS converters, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches
allowing for system size reduction, power density increases and high lifetime reliability.
4
4
Turn-Off losses Eoff @ 800 V, RG=2.2 Ω, VGE/GS=-5/15 V
Eoff
Eoff/ mJ
/ mJ
3
3
10x
10x lower
lower E
Eoff
off
2
2
4
4
Eon
Eon/ mJ
/ mJ
20
20
10
10
ID / A
ID / A
30
30
40
40
2x
2x lower
lower E
Eon
on
2
2
1
1
10
10
CoolSiC™ MOSFET, 45 mΩ, 25°C
CoolSiC™ MOSFET, 45 mΩ, 175°C
20
20
ID / A
ID / A
30
30
40
40
Highspeed 3 Si IGBT 40 A, 25°C
Highspeed 3 Si IGBT 40 A, 175°C
Note: SiC FWD diode used during testing
www.infineon.com/coolsic
Best in class system performance
››Highest efficiency for reduced
cooling effort
››Longer lifetime and higher reliability
››Higher frequency operation
››Reduction in system cost
››Increased in power density
››Reduced system complexity
››Ease of design and implementation
››IGBT compatible driving (+15 V/-5 V)
Turn-On losses Eon @ 800 V, RG=2.2 Ω, VGE/GS=-5/15 V
3
3
0
0
Unique SiC MOSFET characteristics
over traditional 1200 V silicon devices
››Low Qg and device capacitances
››Zero reverse recovery losses of body
diode
››Temperature independent switching
losses
››Threshold-free on-state
characteristic compared to IGBT
Infineon’s unique SiC MOSFET
advantage over SiC competition
››Superior gate oxide reliability
››Best in class switching and
conduction losses
››Higher transconductance (gain)
››Threshold voltage, Vth = 4 V
››Short-circuit robustness
Key benefits
1
1
0
0
Key features
Storage
Product Brief
CoolSiC™ MOSFET. Revolution to rely on.
CoolSiC™ MOSFET first products
are targeted for photovoltaic
inverters, battery charging and
energy storage.
TO-247-4pin package contains an
additional connection to the source
(Kelvin connection) that is used as a
reference potential for the gate driving
voltage, thereby eliminating the effect
of voltage drops over the source
inductance. The result is even lower
switching losses than for TO247-3pin
version, especially at higher currents
and higher switching frequencies.
Easy1B modules offer a very good
thermal interface, a low stray
inductance and robust design as well
as PressFIT connections.
1EDI EiceDRIVER™ Compact –
perfect fit to CoolSiC™ MOSFET
Lead products
Schematic
Type
Single switch
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Drain
IMW120R045M1
Gate
Package
45 mOhm
1200 V
Source
Single switch
TO247-4pin
Drain
Gate
Driver
Source
IMZ120R045M1
45 mOhm
1200 V
FF11mR12W1M1_B11
11 mOhm
1200 V
FF23mR12W1M1_B11
23 mOhm
1200 V
DF11mR12W1M1_B11
11 mOhm
1200 V
DF23mR12W1M1_B11
23 mOhm
1200 V
Power
Source
Half bridge
with NTC
Booster
with NTC
Easy1B PressFIT
Selectively sampling on request.
Drivers for lead products
+3V3
VCC1
VCC2
100n
SGND
IN
GND1
OUT+
IN+
OUT-
IN-
GND2
Type
+15V
4µ7
2R2
Peak current
1EDI20H12AH
2A
1EDI60H12AH
6A
1EDI20N12AF
2A
1EDI60N12AF
6A
3R3
0V
4µ7
-5V
Package
300 mil
150 mil
Selectively sampling on request.
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Order Number: B133-I0286-V1-7600-EU-EC-P
Date: 05 / 2016
VDS
TO247-3pin
Application example
Suited for applications up to 1200 V,
these galvanically isolated gate
driver ICs are based on our coreless
transformer technology, which
enables an minimum common
mode transient immunity (CMTI)
of 100 kV/µs.
RDSON
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).
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dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
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Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical,
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