Product Brief 1200 V CoolSiC™ Schottky diode generation 5 New level of system efficiency and reliability 1200 V SiC Schottky diodes offer great flexibility for system efficiency improvement and increased system reliability in industrial inverter applications like solar, UPS and energy storage. No real reverse recovery charge not only reduces diode turn-off loss close to zero, but also lowers Si IGBT's turn-on loss by at least 40 percent. In such a hybrid set-up of Si IGBT with SiC Schottky diode, the static losses often limit the optimization potential with respect to system cost. To overcome this limitation, the new 1200 V CoolSiC™ Schottky diode generation 5 technology was designed with dramatic reduction in static losses and its temperature dependency. Consistent innovation in device design and assembly techniques paved the way for improved diode performance, reliability and cost position. The result is a new degree of flexibility for the system designer to increase system efficiency, reliability and possibly squeezing system cost. 98.2 100 98.0 90 +0.8% efficiency enables e.g. 30% higher output power! 97.8 97.6 97.4 97.2 97.0 0 500 1000 1500 2000 2500 Output power [W] Ultrafast Si diode 3000 Case temperature [°C] Efficiency [%] 1200 V Si IGBT + SiC diode or ultrafast Si diode in a boost stage topology, fsw = 20 kHz 80 60 50 40 3500 0 500 1000 1500 2000 Output power [W] Ultrafast Si diode temperature Si IGBT temperature with ultrafast Si diode SiC diode 2500 3000 SiC diode temperature Si IGBT temperature with SiC diode With generation 5, reduction of forward voltage and its temperature dependency ensures lowest static losses over entire load range during operation. Massively increased surge current capability provides high reliability during surge current events. IFSM vs. Inom Ex: 10 A SiC diodes in TO-247 16 2.50 14 2.25 12 2.00 1.75 Lowest VF – increase with temperature 1.50 Highest surge current 8 6 9X 5X 5X 4 1.25 1.00 14X 10 IFSM/Inom Forward voltage [V] VF at rated current Ex: 30 A SiC diodes in TO-247 2 Generation 2 Generation 5 Tj = 25 °C www.infineon.com/sic Vendor A Vendor B Tj = 150 °C 0 Generation 2 Generation 5 Vendor A ››Zero diode turn-off loss and 40% lowered IGBT turn-on loss ››Improved thermal performance and lowered static losses ››Extended surge current capability ››2 A up to 40 A rated current Key benefits ››System efficiency improvement ››30% higher output power over Si diodes solution ››Increased system reliability by lower device temperatures over entire load range ››High system reliability by high surge current capability 15°C cooler 70 Key features Vendor B Product Brief 1200 V CoolSiC™ Schottky diode generation 5 New level of system efficiency and reliability CoolSiC™ Gen 5 TRENCHSTOP™ 5 650 V CoolSiC™ Gen 5 < 600 V DC (typ.) CoolSiC™ Gen 5 Phase A High Speed3 1200 V Phase B High Speed 3 1200 V PV CoolSiC™ Gen 5 Phase C CoolSiC™ Gen 5 CoolSiC™ Gen 5 Inverter Boost CoolSiC™ Gen 5 Application examples Grid PV Sensors EiceDRIVER™ EiceDRIVER™ ... ... PWM MPPT Microcontroller power supply XMC4000 MPPT Calculation Legend Power 6 x TRENCHSTOP™ 5 Legend PWM Generation Power ADC Microcontroller Highlight product Other components String inverter three-phase, 1 kW – 30 kW: boost stage Highlight product UPS – Vienna Rectifier ››SiC diode: 1200 V CoolSiC™ Gen 5 in TO-220/TO-247 ››IGBT: 650 V TRENCHSTOP™ 5 in TO-247 Product portfolio Forward currents up to 40 A in TO-247, 20 A in TO-220 and 10 A in DPAK target solar inverters, uninterruptible power supplies (UPS), three-phase SMPS, energy storage and motor drives applications. Continuous forward current IF [A] TO-252 2pin (DPAK) TO-220 2pin 2 IDM02G120C5 IDH02G120C5 5 IDM05G120C5 IDH05G120C5 8 IDM08G120C5 IDH08G120C5 10 IDM10G120C5 TO-247 IDH10G120C5 IDW10G120C5B* 15-16 IDH16G120C5 IDW15G120C5B* 20 IDH20G120C5 IDW20G120C5B* 30 IDW30G120C5B* 40 * „B“ refers to common–cathode configuration: IDW40G120C5B* PIN 1 PIN 2 CASE PIN 3 Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2016 Infineon Technologies AG. All Rights Reserved. Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. 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