Product Brief Features 1200V CoolSiC™ & Direct Drive Technology The green revolution is taking place Complete solution offer consisting of JFET, p-channel MOSFET and dedicated driver No reverse recovery charge thanks to unipolar MOSFET-like characteristics Ohmic output characteristics Monolithically integrated ultrafast Body Diode Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so Utmost efficiency levels reachable far unattainable efficiency levels. The new CoolSiC™ consistently reduces the switching losses with No gate oxides in the structure respect to the available IGBT based silicon devices and even the conduction losses when its ohmic 10 years manufacturing of SiC diodes The revolutionary 1200V CoolSiC™ family, in combination with the proposed Direct Drive characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached also thanks to Infineon CoolSiC™ monolithically integrated body diode, showing a switching performance comparable with that of an external SiC Schottky barrier diode. The Infineon CoolSiC™, Benefits Simplifies design-in and enables product to be operated as normally off device Extremely low and temperature independent switching losses Reduced conduction losses with respect to IGBT mainly at partial and at light load Low power losses in reverse operation in combination with synchronous rectification, reduced footprint Enables either reduced cooling requirements, the adoption of higher operating frequencies resulting in system costs savings by shrinking passive components or reaching a higher power density design in same footprint Utmost reliability High quality knowhow and capacity in SiC devices with its ultrafast body diode and dedicated Driver IC, represents the best solution for solar, UPS and industrial drives applications by combining best performance, reliability, safety and ease of use. Direct measurements in a Three-phase string Inverter (sunny tripower by SMA Solar Technology AG) Pout max 17kW fsw=16kHz 1) 99.0 98.5 Efficiency [%] 98.0 97.5 97.0 96.5 96.0 Si IGBT SiC JFET 95.5 95.0 94.5 94.0 5 15 25 35 45 55 65 75 85 95 Measured system efficiencies at optimum operation point Output Power [% nominal] Measured system efficiencies at several DC link voltages (400V up to 800V) 1) G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET” with Integrated Body Diode Boosts Performance of Photovoltaic Systems” Proc. PCIM, May 2011 www.infineon.com/CoolSiC Applications Solar UPS Industrial Drives Product Brief 1200V CoolSiC™ & Direct Drive Technology The green revolution is taking place Infineon Direct Drive Technology The Infineon approach to SiC switches consists of a simple Drain cascode VCC1 CVCC that directly drives both the CoolSiC™ and the LV p-channel SiC JFET +5V to SGND and safe driver circuit design based on a dedicated driver IC JFDrv MOSFET, as indicated in the picture on the left. The main VCC2 Controller MDrv IN VReg EN CLJFG CVReg CVEE2 features of the unique SiC direct drive approach are: LV MOSFET GND1 SGND A low-voltage Si MOSFET is used to insure safe off-state during start up or system failure. During normal operation, the LV MOSFET is turned-on and acts like a small resistance A dedicated driver IC operating both normally-on JFET and p-MOS --> enabling a normally-off behavior and best controllability of the JFET VEE2 -25V to VCC2 BSEN Source cascode 1EDI30J12CL/CP CoolSiC™ Monolithically Integrated Body Diode and Synchronous Rectification 1600 explicitly optimized to provide a benchmarking switching 1400 SiC Schottky barrier diode 1200 Body diode SiC JFET performance. This decision accounts for the possibility of exploiting the ohmic characteristics of the CoolSiC™ also in reverse operation with the adoption of a synchronous rectification driving scheme: the relatively high voltage drop of the body diode can be in fact significantly reduced by turning-on the JFET channel in parallel. With such a driving scheme the conduction losses of the diode are negligible, as they play a role only within a very short dead time between turn-off of the channel and commutation of the body diode. Turn on switching energy [uJ] The monolithically integrated body diode has been 1000 800 600 400 200 0 0 5 10 15 20 25 30 35 Load current [A] CoolSiC™ 1200V JFET portfolio and recommended driver / LV MOS for Direct Drive Technology RDS(on) [mΩ] Voltage[V] 1200 1200 70 100 70 100 Sales name IJW120R070T1 IJW120R100T1 IJC120R070T1 IJC120R100T1 Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9713-G1-X-7600-DB2012-0004 Date: 11 / 2012 JFET Package Driver Driver Package LV MOS TO247 TO247 Bare die Bare die 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 BSC030P03NS3 G BSC030P03NS3 G IPC099P03N IPC099P03N Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). LV MOS Package SuperSO8 SuperSO8 Bare die Bare die Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.