1200 V CoolSiC™ Schottky Diode Generation 5: New level of system efficiency and reliability May 2016 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 2 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 3 Application areas Silicon based solution Design in a new level of efficiency & reliability? Enabled by SiC Schottky diodes April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 4 Application examples String inverter 3-phase, 1 kW – 30 kW: Boost stage SiC Diode: IGBT: IGBT Driver: µController: April 2016 1200 V G5 TO-220/TO-247 HighSpeed 3 1200V TO-247 1ED020I12-F2, 2ED020I12-F2 XMC4000 UPS: Vienna Rectifier SiC Diode: 1200 V G5 TO-220 / TO-247 IGBT: TRENCHSTOP™ 5 650 V TO-247 Copyright © Infineon Technologies AG 2016. All rights reserved. 5 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 6 No more pain with dynamic losses Example: 1200 V Si IGBT + SiC diode in a boost stage topology Vin= 400 V, Vout= 800 V, fsw=20 kHz SiC diode compared to Si diode, has ... ... higher system efficiency, ... lower device thermals, for ... increased power density and reliability! April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 7 SiC diode benefit – Less leads to more Ultrafast Si: large Qrr SiC: low Qc Features Technical benefits Customer benefits › No reverse recovery charge › Erec close to zero › 20-30% higher output › No forward recovery › Purely capacitive switching › 40-50% reduction in IGBT turn-on loss › No voltage overshoots › Switching losses independent from load current, switching speed and temperature April 2016 power in same form factor › Reduced EMI › No need for snubber circuitry, reduced parts count › High system reliability Copyright © Infineon Technologies AG 2016. All rights reserved. 8 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 9 Major improvement in static losses while maintaining virtually zero reverse recovery charge 1200 V CoolSiCTM Schottky Diode Generation 5 1. Reduction of VF and its temperature dependency for low static losses over entire load range Forward voltage, VF, of SiC and ultrafast Si diodes Reverse recovery charge, Qc/Qrr, of SiC and ultrafast Si diodes 3 2,5 10 A SiC on par with 30 A Si 25 °C 125 °C Qc/Qrr [µC] 2,0 1,5 1,0 0,5 0,0 SiC with capacitive charge in nC range Gen2 10 A Gen5 10 A Junction temperature Si 30A 0 Si 30A 1 Si 30A 1 SiC Gen210A 2 SiC Gen2 10A VF [V] 2 125 °C Junction temperature * Based on datasheet values April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 10 Generation 5 is the performance-leading SiC diode 1200 V CoolSiCTM Schottky Diode Generation 5 2. Thermal performance improvement 3. Extended surge current capability for improved reliability VF at rated current SiC diodes in TO-247 Surge current SiC diodes in TO-247 2,5 2,25 Tj= 150 °C Lowest VFincrease with temperature 2 1,75 14x 14 12 10 IFSM/Inom Forward Voltage [V] 16 Tj= 25 °C 1,5 1,25 8 6 5x Highest surge current 9x 5x 4 2 1 G2 G5 Vendor A Vendor B 0 G2 G5 Vendor A Vendor B * Based on datasheet values April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 11 Consistent innovation made the way for Generation 5 Merged Pn Schottly (MPS) design Thin wafer technology Gen2 Gen 5 Improved performance and chip shrink Diffusion bonding Gen 2 165.5 °C April 2016 Gen 5 136.4 °C Copyright © Infineon Technologies AG 2016. All rights reserved. 12 Consistent innovation made the way for Generation 5 Merged Pn Schottly (MPS) design › 40% lower resistive losses than Generation2 having pure Schottky design reduced VF and higher current density low temperature dependency on VF › High surge current capability › › Smaller differential resistance per chip area Better heat spread between junction and case Thin wafer technology Gen2 Gen 5 higher current density operation Diffusion bonding (TO-220, DPAK) Gen 2 165.5 °C April 2016 Gen 5 136.4 °C › Smaller thermal resistance higher current density operation Copyright © Infineon Technologies AG 2016. All rights reserved. 13 The result: lowest losses and lowest case temperatures Example: 1200 V HighSpeed3 Si IGBT with SiC diodes vs. Si diode in a boost stage topology, Vin= 400 V, Vout= 800 V, fsw=20 kHz Case Temperature [oC] Boost Diode-Thermals SiC diode, G5 SiC diode, Vendor A SiC diode, Vendor B ultrafast Si diode Output Power [W] Best optimization potential for system improvements e.g. increasing output power April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 14 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 15 1200 V CoolSiCTM Schottky Diode Generation 5: up to 40 A in TO-247, 20 A in TO-220 and 10 A in DPAK IF TO-252-2 (DPAK) TO-220-2 2A IDM02G120C5 IDH02G120C5 5A IDM05G120C5 IDH05G120C5 8A IDM08G120C5 IDH08G120C5 10 A IDM10G120C5 IDH10G120C5 IDW10G120C5B* 15-16 A IDH16G120C5 IDW15G120C5B* 20 A IDH20G120C5 IDW20G120C5B* TO-247-3 30 A IDW30G120C5B* 40 A IDW40G120C5B* *) "B" refers to common-cathode configuration: April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 16 Focus applications across portfolio IF TO-252-2 (DPAK) TO-220-2 TO-247-3 2A 5A 8A Micro Inverter1 SMPS Micro Inverter1 SMPS, UPS 10 A 15-16 A UPS 20 A String Inverter and UPS 30 A 40 A 1Rectification April 2016 in secondary side Copyright © Infineon Technologies AG 2016. All rights reserved. 17 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 18 Great system impact thanks to zero diode turn-off loss and reduced IGBT turn-on IL i D1 L1 D1 Vo IL Vi IRRM t S1=of f IL L1 IRRM IL D1 IRRM i,v Vo IC = IL + IRRM S1 IRRM VCE Vi Eon S1=o n t0 t1 IL t2 t Up to 40-50% reduction in IGBT turn-on loss › › Decreased IRRM means decreased S1 (IGBT) turn-on losses Eon = April 2016 t2 t1 ʃ VO * IC * dt Copyright © Infineon Technologies AG 2016. All rights reserved. 19 Switching Losses, Psw, in SiC and Si diodes SiC Diode Psw = 0.17 Si Diode * Vo * f * QC Psw = 0.17 * Vo * f * IRRM * tB SiC switching loss is very low compared to Si: › Si shows higher Psw than SiC due to IRRM › IRRM and tB values depends on diode forward current, dif/dt and diode junction temperature April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 20 30 A rated Si diode can be exchanged to even a 10 A CoolSiCTM Generation 5 SiC diode! 30 A Si dissipates more power than a 10 A SiC › 18 A Si have 8.8 W additional power dissipation compared to 10 A SiC @ 2 A IF › 18 A Si have 9.4°C higher junction temp. compared to 10 A SiC @ 2 A IF April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 21 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 22 Summary › By using SiC diodes, designers for solar inverters, UPS, motor drives and other industrial applications can design in a new level of system efficiency, higher power density and reliability compared with Si based solution › 1200 V CoolSiC™ Schottky diode generation 5 supports this by low-loss turn-off, low static losses and increased surge current capability April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 23 Support materials Collaterals and brochures Technical material Support and tools Videos April 2016 › › › › › Selection Guides Product Briefs Application Brochures Presentations Press Releases, Ads › › › › Application Notes Technical Articles Simulation Models Datasheets › › PCB Design Data Simulation Models › › › Technical Videos Product Information Videos www.infineon.com/sic Copyright © Infineon Technologies AG 2016. All rights reserved. 24