Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
PrimePACK™3+模块采用第五代沟槽栅/场终止IGBT5和第五代发射极控制二极管带有温度检测NTC
PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC
VCES = 1700V
IC nom = 1800A / ICRM = 3600A
典型应用
• 大功率变流器
• 电机传动
• 牵引变流器
• 风力发电机
TypicalApplications
• Highpowerconverters
• Motordrives
• Tractiondrives
• Windturbines
电气特性
• 提高工作结温Tvjop
• 高电流密度
• 低开关损耗
• 低VCEsat
• Tvjop=175°C
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• Highcurrentdensity
• Lowswitchinglosses
• LowVCEsat
• Tvjop=175°C
机械特性
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率循环和温度循环能力
• 高功率密度
MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerandthermalcyclingcapability
• Highpowerdensity
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 85°C, Tvj max = 175°C
IC nom 1800
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
3600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
8,95
kW
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
VCE sat
typ.
max.
1,75
2,10
2,30
2,20
2,65
2,90
V
V
V
5,80
6,25
V
栅极阈值电压
Gatethresholdvoltage
IC = 64,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
9,00
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,8
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
105
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
3,20
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,56 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
上升时间(电感负载)
Risetime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,56 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
下降时间(电感负载)
Falltime,inductiveload
IC = 1800 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 1800 A, VCE = 900 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 9100 A/µs (Tvj = 175°C) Tvj = 125°C
RGon = 0,56 Ω
Tvj = 175°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,35
0,31
0,33
0,34
µs
µs
µs
0,17
0,18
0,19
µs
µs
µs
0,71
0,80
0,85
µs
µs
µs
0,14
0,18
0,21
µs
µs
µs
Eon
405
600
725
mJ
mJ
mJ
IC = 1800 A, VCE = 900 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2500 V/µs (Tvj = 175°C) Tvj = 125°C
RGoff = 0,68 Ω
Tvj = 175°C
Eoff
485
680
780
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
7200
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 175°C
td on
tr
td off
tf
Tvj op
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
2
16,5 K/kW
14,0
-40
K/kW
175
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
VRRM 1700
V
IF
1800
A
IFRM
3600
A
I²t
730
650
PRQM 1800
kW
特征值/CharacteristicValues
min.
kA²s
kA²s
typ.
max.
VF
1,75
1,70
1,70
2,10
2,05
2,05
IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
IRM
1350
1600
1800
A
A
A
恢复电荷
Recoveredcharge
IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
Qr
315
620
810
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 175°C
Erec
160
365
480
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
正向电压
Forwardvoltage
IF = 1800 A, VGE = 0 V
IF = 1800 A, VGE = 0 V
IF = 1800 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
V
V
V
33,0 K/kW
17,0
-40
K/kW
175
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TNTC = 25°C
R100偏差
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TNTC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
3
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 4,0
kV
Cu
模块基板材料
Materialofmodulebaseplate
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
19,0
19,0
mm
> 400
相对电痕指数
Comperativetrackingindex
CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
10
nH
RCC'+EE'
0,10
mΩ
Tstg
-40
150
°C
3,00
6,00
Nm
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
端子联接扭距
Terminalconnectiontorque
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
G
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
4
max.
LsCE
模块安装的安装扭距
Mountingtorqueformodulmounting
重量
Weight
typ.
1,8
-
2,1
Nm
8,0
-
15
Nm
1400
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=175°C
3600
3600
3400
3400
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
3200
2800
2800
2600
2600
2400
2400
2200
2200
2000
2000
IC [A]
3000
IC [A]
3000
1800
1800
1600
1600
1400
1400
1200
1200
1000
1000
800
800
600
600
400
400
200
200
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
3200
0,0
0,4
0,8
1,2
1,6 2,0
VCE [V]
2,4
2,8
3,2
0
3,6
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
VCE [V]
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.56Ω,RGoff=0.68Ω,VCE=900V
3600
1800
3400
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
3200
Eon, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 150°C
Eoff, Tvj = 175°C
1600
3000
2800
1400
2600
2400
1200
2200
1000
IC [A]
E [mJ]
2000
1800
1600
800
1400
1200
600
1000
800
400
600
400
200
200
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
5
0
600
1200
1800
IC [A]
2400
3000
3600
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=1800A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
2800
100
Eon, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 150°C
Eoff, Tvj = 175°C
2600
2400
ZthJC : IGBT
2200
2000
10
1800
E [mJ]
ZthJC [K/kW]
1600
1400
1200
1000
1
800
600
400
i:
1
2
3
4
ri[K/kW]: 3,15
6,26
6,26
0,836
τi[s]:
0,0222 0,0521 0,0521 1,07
200
0
0,1
0,001
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.68Ω,Tvj=175°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
4200
3600
3400
IC, Modul
IC, Chip
3200
3600
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
3000
2800
2600
3000
2400
2200
2400
IF [A]
IC [A]
2000
1800
1600
1800
1400
1200
1200
1000
800
600
600
400
200
0
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
6
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.56Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=1800A,VCE=900V
600
650
Erec, Tvj = 150°C
Erec, Tvj = 175°C
Erec, Tvj = 150°C
Erec, Tvj = 175°C
600
550
500
500
450
400
E [mJ]
E [mJ]
400
300
350
300
250
200
200
150
100
100
50
0
0
600
1200
1800
IF [A]
2400
3000
0
3600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
RG [Ω]
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150°C
100
4000
ZthJC : Diode
IR, Modul
3500
3000
IR [A]
ZthJC [K/kW]
2500
10
2000
1500
1000
i:
1
2
3
4
ri[K/kW]: 2,4
21,4
6,3
2,89
τi[s]:
0,00212 0,0384 0,166 2,05
1
0,001
0,01
0,1
t [s]
1
500
0
10
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
7
0
200
400
600
800 1000 1200 1400 1600 1800
VR [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
25
50
75
TC [°C]
100
125
150
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
接线图/Circuitdiagram
8
7
6
5
4
3
2
1
封装尺寸/Packageoutlines
2x
36 `0,2
F
8x
8 `0,1
4x
18 `0,2
250 `1
A
E
224
recommended design height lower side
bus bar to baseplate
187
150
113
76
38,25 `0,25
7,5 +- 0,5
0
screwing depth
max. 8mm (8x)
58
8x M8
24
6
14x n5,5 `0,1
j n0,8 A B C
j n0,5 A B C
6x 10
D
max. 2
B
26 `0,25
8x M4
2x
22,1 `0,3
39
89 `0,5
(n5,5)
2x
25,1 `0,3
20,6 `0,3
8x 4
37
C
8x
12 `0,3
23,6 `0,3
73
max. 3
(n5,5)
j n0,8 A B C
14
screwing depth
max. 16mm (8x)
C
25
39
recommended design height lower side
PCB to baseplate
64
78
B
117
156
195
234
Kanten:
Freimaßtoleranz: Oberfläche: Maßstab: 1 : 1
ISO 13715
ISO 2768 - mK
Datum
Bearb. 22.08.2014
Gepr. 03.12.2014
Norm
A
Mat.-N
EN ISO 1302 Werkstoff:
Name
Britwin
EU\noellem
Dokumentstatus:
Benennung:
Serienfreigabe
Modul
PP3+ - Datenblattskizze
Re
D00046423
Revision
8
7
6
5
4
Änderungen
3
Datum
Name
Modell: A00026149
2
Ersatz für: E_70128/ProE
Ersetzt dur
1
© Alle Rechte bei INFINEON TECHNOLOGIES AG , auch für den Fall von Schutz
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1800R17IP5
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
使用条件和条款
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如需产品、技术、交付条款和条件以及价格等进一步信息,请向离您最近的英飞凌科技办公室接洽(www.infineon.com)。
警告事项
由于技术所需产品可能含有危险物质。如需了解该等物质的类型,请向离您最近的英飞凌科技办公室接洽。
除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外,英飞凌科技的产品不应当被用于任何一项一旦产品失效
或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。
Terms&Conditionsofusage
IMPORTANTNOTICE
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandany
applicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologies
incustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.
preparedby:TA
dateofpublication:2016-01-26
approvedby:WR
revision:V3.1
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