技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 PrimePACK™3+模块采用第五代沟槽栅/场终止IGBT5和第五代发射极控制二极管带有温度检测NTC PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 1700V IC nom = 1800A / ICRM = 3600A 典型应用 • 大功率变流器 • 电机传动 • 牵引变流器 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • Tractiondrives • Windturbines 电气特性 • 提高工作结温Tvjop • 高电流密度 • 低开关损耗 • 低VCEsat • Tvjop=175°C ElectricalFeatures • ExtendedoperatingtemperatureTvjop • Highcurrentdensity • Lowswitchinglosses • LowVCEsat • Tvjop=175°C 机械特性 • 封装的CTI>400 • 高爬电距离和电气间隙 • 高功率循环和温度循环能力 • 高功率密度 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerandthermalcyclingcapability • Highpowerdensity ModuleLabelCode BarcodeCode128 DMX-Code preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 85°C, Tvj max = 175°C IC nom 1800 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 3600 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 8,95 kW VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 1800 A, VGE = 15 V IC = 1800 A, VGE = 15 V IC = 1800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 175°C VCE sat typ. max. 1,75 2,10 2,30 2,20 2,65 2,90 V V V 5,80 6,25 V 栅极阈值电压 Gatethresholdvoltage IC = 64,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 9,00 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,8 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 105 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,20 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 1800 A, VCE = 900 V VGE = ±15 V RGon = 0,56 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C 上升时间(电感负载) Risetime,inductiveload IC = 1800 A, VCE = 900 V VGE = ±15 V RGon = 0,56 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 1800 A, VCE = 900 V VGE = ±15 V RGoff = 0,68 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C 下降时间(电感负载) Falltime,inductiveload IC = 1800 A, VCE = 900 V VGE = ±15 V RGoff = 0,68 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 1800 A, VCE = 900 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 9100 A/µs (Tvj = 175°C) Tvj = 125°C RGon = 0,56 Ω Tvj = 175°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,35 0,31 0,33 0,34 µs µs µs 0,17 0,18 0,19 µs µs µs 0,71 0,80 0,85 µs µs µs 0,14 0,18 0,21 µs µs µs Eon 405 600 725 mJ mJ mJ IC = 1800 A, VCE = 900 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 2500 V/µs (Tvj = 175°C) Tvj = 125°C RGoff = 0,68 Ω Tvj = 175°C Eoff 485 680 780 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 7200 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 175°C td on tr td off tf Tvj op preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 2 16,5 K/kW 14,0 -40 K/kW 175 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 175°C 最大损耗功率 Maximumpowerdissipation Tvj = 125°C VRRM 1700 V IF 1800 A IFRM 3600 A I²t 730 650 PRQM 1800 kW 特征值/CharacteristicValues min. kA²s kA²s typ. max. VF 1,75 1,70 1,70 2,10 2,05 2,05 IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 175°C IRM 1350 1600 1800 A A A 恢复电荷 Recoveredcharge IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 175°C Qr 315 620 810 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 1800 A, - diF/dt = 9100 A/µs (Tvj=175°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 175°C Erec 160 365 480 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 正向电压 Forwardvoltage IF = 1800 A, VGE = 0 V IF = 1800 A, VGE = 0 V IF = 1800 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 175°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op V V V 33,0 K/kW 17,0 -40 K/kW 175 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 3 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu 模块基板材料 Materialofmodulebaseplate 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 33,0 33,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 19,0 19,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 10 nH RCC'+EE' 0,10 mΩ Tstg -40 150 °C 3,00 6,00 Nm 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 端子联接扭距 Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M G preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 4 max. LsCE 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight typ. 1,8 - 2,1 Nm 8,0 - 15 Nm 1400 g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=175°C 3600 3600 3400 3400 Tvj = 25°C Tvj = 150°C Tvj = 175°C 3200 2800 2800 2600 2600 2400 2400 2200 2200 2000 2000 IC [A] 3000 IC [A] 3000 1800 1800 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 3200 0,0 0,4 0,8 1,2 1,6 2,0 VCE [V] 2,4 2,8 3,2 0 3,6 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=0.56Ω,RGoff=0.68Ω,VCE=900V 3600 1800 3400 Tvj = 25°C Tvj = 150°C Tvj = 175°C 3200 Eon, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 150°C Eoff, Tvj = 175°C 1600 3000 2800 1400 2600 2400 1200 2200 1000 IC [A] E [mJ] 2000 1800 1600 800 1400 1200 600 1000 800 400 600 400 200 200 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 5 0 600 1200 1800 IC [A] 2400 3000 3600 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=1800A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2800 100 Eon, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 150°C Eoff, Tvj = 175°C 2600 2400 ZthJC : IGBT 2200 2000 10 1800 E [mJ] ZthJC [K/kW] 1600 1400 1200 1000 1 800 600 400 i: 1 2 3 4 ri[K/kW]: 3,15 6,26 6,26 0,836 τi[s]: 0,0222 0,0521 0,0521 1,07 200 0 0,1 0,001 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=0.68Ω,Tvj=175°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 4200 3600 3400 IC, Modul IC, Chip 3200 3600 Tvj = 25°C Tvj = 150°C Tvj = 175°C 3000 2800 2600 3000 2400 2200 2400 IF [A] IC [A] 2000 1800 1600 1800 1400 1200 1200 1000 800 600 600 400 200 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.56Ω,VCE=900V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1800A,VCE=900V 600 650 Erec, Tvj = 150°C Erec, Tvj = 175°C Erec, Tvj = 150°C Erec, Tvj = 175°C 600 550 500 500 450 400 E [mJ] E [mJ] 400 300 350 300 250 200 200 150 100 100 50 0 0 600 1200 1800 IF [A] 2400 3000 0 3600 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 RG [Ω] 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 100 4000 ZthJC : Diode IR, Modul 3500 3000 IR [A] ZthJC [K/kW] 2500 10 2000 1500 1000 i: 1 2 3 4 ri[K/kW]: 2,4 21,4 6,3 2,89 τi[s]: 0,00212 0,0384 0,166 2,05 1 0,001 0,01 0,1 t [s] 1 500 0 10 preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 7 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 25 50 75 TC [°C] 100 125 150 preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 接线图/Circuitdiagram 8 7 6 5 4 3 2 1 封装尺寸/Packageoutlines 2x 36 `0,2 F 8x 8 `0,1 4x 18 `0,2 250 `1 A E 224 recommended design height lower side bus bar to baseplate 187 150 113 76 38,25 `0,25 7,5 +- 0,5 0 screwing depth max. 8mm (8x) 58 8x M8 24 6 14x n5,5 `0,1 j n0,8 A B C j n0,5 A B C 6x 10 D max. 2 B 26 `0,25 8x M4 2x 22,1 `0,3 39 89 `0,5 (n5,5) 2x 25,1 `0,3 20,6 `0,3 8x 4 37 C 8x 12 `0,3 23,6 `0,3 73 max. 3 (n5,5) j n0,8 A B C 14 screwing depth max. 16mm (8x) C 25 39 recommended design height lower side PCB to baseplate 64 78 B 117 156 195 234 Kanten: Freimaßtoleranz: Oberfläche: Maßstab: 1 : 1 ISO 13715 ISO 2768 - mK Datum Bearb. 22.08.2014 Gepr. 03.12.2014 Norm A Mat.-N EN ISO 1302 Werkstoff: Name Britwin EU\noellem Dokumentstatus: Benennung: Serienfreigabe Modul PP3+ - Datenblattskizze Re D00046423 Revision 8 7 6 5 4 Änderungen 3 Datum Name Modell: A00026149 2 Ersatz für: E_70128/ProE Ersetzt dur 1 © Alle Rechte bei INFINEON TECHNOLOGIES AG , auch für den Fall von Schutz preparedby:TA dateofpublication:2016-01-26 approvedby:WR revision:V3.1 9 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF1800R17IP5 Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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