Datasheet

UNISONIC TECHNOLOGIES CO., LTD
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UTT9NP03
Power MOSFET
30V DUAL MIDDLE POWER
MOSFET
(N-CHANNEL/P-CHANNEL)
DESCRIPTION

The UTC UTT9NP03 is a 30V N-Channel & P-Channel middle
Power MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance, etc.
The UTC UTT9NP03 is suitable for switching.
SOP-8
FEATURES

* Low on-resistance
SYMBOL

(5)(6)(7)(8)
Drain
(4)
Gate
(2)
Gate
Source
(1)
N-Channel

Source
(3)
P-Channel
ORDERING INFORMATION
Ordering Number
Note:

UTT9NP03G-S08-R
Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
1
S
Pin Assignment
2 3 4 5 6 7
G S G D D D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UTT9NP03

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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
RATINGS
TR1
30
±20
±9.0
±18
3.5
7.0
TR2
-30
±20
±8.0
±18
2.2
-5.5
UNIT
VDSS
V
VGSS
V
Continuous (Note 4)
ID
A
Drain Current
A
Pulsed (Note 5)
IDP
Avalanche Energy, Single Pulse (Note 3)
EAS
mJ
Avalanche Current (Note 3)
IAS
A
PD (Note 4)
2.6
W
Total
Power Dissipation
1.5
W
PD (Note 6)
Element
PD (Note 6)
1.25
W
Junction Temperature
TJ
150
°C
Range of Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. N-CHANNEL : L=0.1mH, VDD=15V, RG=25 Ω, Starting TJ = 25°C
P-CHANNEL : L=0.1mH, VDD=-15V, RG=25 Ω, Starting TJ = 25°C
4. PW ≤ 1s, Limited only by maximum temperature allowed.
5. PW ≤ 10µs, Duty cycle ≤ 1%.
6. Mounted on a ceramic board.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATINGS
83.3
UNIT
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Pulsed)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
30
VGS(TH)
VDS=VGS, ID=1mA
VGS=10V, ID=9A
VGS=4.5V, ID=7A
VGS=5V, ID=7A
1.0
RDS(ON)
Transconductance (Pulsed)
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Pulsed)
QG
VGS=4.5V, VDD=15V, ID=9A
Gate to Source Charge (Pulsed)
QGS
(Note 1, 2)
Gate to Drain Charge (Pulsed)
QGD
Turn-ON Delay Time (Pulsed)
tD(ON)
VDD=15V, VGS=10V, ID=4.5A,
Rise Time (Pulsed)
tR
RG=10Ω, RL=3.3Ω (Note 1, 2)
Turn-OFF Delay Time (Pulsed)
tD(OFF)
Fall-Time (Pulsed)
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Body Diode Continuous Forward
IS
Current
TA=25°C
Body Diode Pulse Current (Note 3)
ISP
Forward Voltage (Pulsed)
VSD
IS=1A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. PW ≤ 10µs, Duty cycle ≤ 1%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
12.3
18.2
MAX
UNIT
1
±100
V
µA
nA
2.5
16.0
23.7
4.4
V
mΩ
mΩ
S
640
110
90
pF
pF
pF
7.9
3.1
2.8
8
19
33
7
nC
nC
nC
ns
ns
ns
ns
1.0
A
18
1.2
A
V
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Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Pulsed)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=-1mA, VGS=0V
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
-30
VGS(TH)
VDS=VGS, ID=-1mA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5.5A
VGS=-5V, ID=-5.5A
-1.0
RDS(ON)
Transconductance (Pulsed)
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Pulsed)
QG
VGS=-4.5V, VDD=-15V, ID=-8A
Gate to Source Charge (Pulsed)
QGS
(Note 1, 2)
Gate to Drain Charge (Pulsed)
QGD
Turn-ON Delay Time (Pulsed)
tD(ON)
VDD=-15V, VGS=-10V, ID=-4A,
Rise Time (Pulsed)
tR
RG=10Ω, RL=3.8Ω
Turn-OFF Delay Time (Pulsed)
tD(OFF)
(Note 1, 2)
Fall-Time (Pulsed)
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Body Diode Continuous Forward
IS
Current
TA=25°C
Body Diode Pulse Current (Note 2)
ISP
Forward Voltage (Pulsed)
VSD
IS=-1A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. PW ≤ 10µs, Duty cycle ≤ 1%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
22.0
31.0
MAX
UNIT
-1
±100
V
µA
nA
-2.5
28.6
40.3
5.5
V
mΩ
mΩ
S
890
160
125
pF
pF
pF
9.8
3.0
3.7
10
16
55
22
nC
nC
nC
ns
ns
ns
ns
-1.0
A
-18
-1.2
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
N-CHANNEL
VG
Same Type
as DUT
12V
QG
VGS
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
P-CHANNEL
VG
Same Type
as DUT
12V
QG
VGS
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
-10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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