Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF830K-TA
Preliminary
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF830K-TA is a N-Channel enhancement mode
silicon gate power MOSFET is designed high voltage, high speed
power switching applications such as switching regulators,
switching converters, solenoid, motor drivers, relay drivers.

FEATURES
* RDS(ON) < 1.8Ω @ VGS = 10V, ID = 2.5 A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF3-T
UF830KG-TF3-T
UF830KL-TF1-T
UF830KG-TF1-T
UF830KL-TF2-T
UF830KG-TF2-T
UF830KL-TF3T-T
UF830KG-TF3T-T
UF830KL-TM3-T
UF830KG-TM3-T
UF830KL-TMS-T
UF830KG-TMS-T
UF830KL-TMS2-T
UF830KG-TMS2-T
UF830KL-TMS4-T
UF830KG-TMS4-T
UF830KL-TN3-R
UF830KG-TN3-R
UF830KL-TND-R
UF830KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-095.a
UF830K-TA

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-095.a
UF830K-TA

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
Drain to Source Voltage (TJ=25°C ~125°C)
Drain to Gate Voltage (RG=20kΩ, TJ=25°C ~125°C)
Gate to Source Voltage
Continuous
Drain Current
Pulsed
SYMBOL
VDS
VDGR
VGS
ID
IDM
RATINGS
500
500
±30
4.5
18
UNIT
V
V
V
A
A
Peak Diode Recovery dv/dt (Note 3)
2
V/ns
dv/dt
TO-220
73
W
TO-220F/TO-220F1
38
W
TO-220F3
Power Dissipation (TC = 25°C) TO-220F2
PD
40
W
TO-251/TO-251S
TO-251S2/ TO-251S4
46
W
TO-252/TO-252D
Single Pulse Avalanche Energy Rating (Note 2)
EAS
80
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 8mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
62.5
°C/W
100.3
°C/W
1.71
°C/W
3.31
°C/W
3.125
°C/W
2.7
°C/W
θJA
θJC
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UF830K-TA
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Preliminary
Power MOSFET
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
BVDSS
ID(ON)
ID=250μA, VGS=0V
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
500
4.5
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
ID=2.5A, VGS=10V (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, ID=1.3A, VDD=50V
Gate-Source Charge
QGS
IG=100μA (Note 3)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Turn-On Rise Time
tR
RG=25Ω (Note 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (TJ=25°C)
VSD
ISD=4.4A, VGS=0V (Note 1)
Continuous Source to Drain Current
IS
(Note 4)
Pulse Source to Drain Current
ISD
Reverse Recovery Time
trr
VGS = 0V, IS = 4.5A,
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
4. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
25
V
A
μA
250
μA
±100
nA
4.0
1.8
V
Ω
260
56
7
pF
pF
pF
45
4
4
36
29
110
29
nC
nC
nC
ns
ns
ns
ns
1.6
4.5
18
450
3
V
A
A
nS
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
Vary tP to Obtain
Required Peak IAS
+
RG
VDD
VGS
DUT
0V
tp
IAS
0.01Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
RL
+
RG
VDD
DUT
VGS
Switching Time Test Circuit
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UF830K-TA

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
50%
10%
PULSE WIDTH
50%
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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QW-R205-095.a
UF830K-TA
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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