Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT130N06M
POWER MOSFET
80A, 60V N-CHANNEL POWER
MOSFET
1

TO-220
DESCRIPTION
The UTC UTT130N06M is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and extremely low on-state resistance, etc.
The UTC UTT130N06M is suitable for secondary side
synchronous rectification, DC-DC converter, motor control and load
switching, etc.

1
TO-251
1
FEATURES
DFN-8(5x6)
* RDS(ON) < 5.9mΩ @ VGS=10V, ID=25A
RDS(ON) < 7.2mΩ @ VGS=4.5V, ID=25A
* High power and current handling capability
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT130N06ML-TA3-T
UTT130N06MG-TA3-T
TO-220
UTT130N06ML-TM3-T
UTT130N06MG-TM3-T
TO-251
UTT130N06MG-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 2
G D
G D
S S
Pin Assignment
3 4 5 6
S - - S - - S G D D
7
D
8
D
Packing
Tube
Tube
Tape Reel
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QW-R209-108.D
UTT130N06M

Power MOSFET
MARKING
TO-220 / TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
DFN-8(5×6)
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UTT130N06M

Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Diode Continuous Forward Current
RATINGS
UNIT
60
V
±20
V
40
A
Continuous
80 (Note 2)
A
Drain Current
300 (Note 3)
A
Pulsed
Avalanche Current (Note 4)
30
A
Avalanche Energy (Note 5)
450
mJ
TO-220
290
W
Power Dissipation
PD
TO-251
126
W
DFN-8(5×6)
96
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Current limited by bond wire.
3. Pulse width limited by max. junction temperature.
4. UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C)
5. L=1mH, IAS=30A, VDD= 50V, RG=25Ω, Starting TJ=25°C
6. ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C

SYMBOL
VDSS
VGSS
IS
ID
IDM
IAS
EAS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220
TO-251
DFN-8(5×6)
TO-220
TO-251
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
75
110
0.43
1.0
1.3
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
VGS=10V, ID=25A
RDS(ON)
(Note 1)
VGS=4.5V, ID=25A
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, ID=1.3A, IG=100μA
Gate to Source Charge
QGS
VGS=10V (Note 1,2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=20A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=30A, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
60
1.0
4.3
5.6
1
+100
-100
V
µA
nA
nA
3.0
5.9
7.2
V
mΩ
mΩ
454
364
313
pF
pF
pF
620
24
36
100
150
1850
560
nC
nC
nC
ns
ns
ns
ns
40
0.8
33
41
160
1.3
A
A
V
ns
µC
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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