Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UPD02R145L
Power MOSFET
-29.7A, -20V, P-CHANNEL
POWER MOSFET

DESCRIPTION
1
The UTC UPD02R145L is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, etc.
The UTC UPD02R145L is suitable for battery switches, load
switches and power management, etc.

DFN-8(5x6)
FEATURES
* RDS(ON) < 14.5 mΩ @ VGS=-4.5V, ID=-8A
RDS(ON) < 20.5 mΩ @ VGS=-2.5V, ID=-5A
RDS(ON) < 33 mΩ @ VGS=-1.8V, ID=-2A
RDS(ON) < 65 mΩ @ VGS=-1.5V, ID=-2A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UPD02R145LG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(5×6)
1
S
2
S
Pin Assignment
3 4 5 6 7 8
S G D D D D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150°C)
Pulsed Drain Current (t=300μs)
Continuous Source-Drain Diode
Current
SYMBOL
VDSS
VGSS
IDM
RATINGS
-20
±8
-29.7
-23.8
-60
UNIT
V
V
A
A
A
TC=25°C
IS
-16
A
TC=25°C
TC=70°C
PD
TC=25°C
TC=70°C
ID
19
W
12
W
Junction Temperature
TJ
-50~150
°C
Storage Temperature Range
TSTG
-50~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Power Dissipation

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 1, 3)
t≤5s
θJA
28
36
°C/W
Junction-to-Case (Drain)
Steady State
θJC
5.3
6.5
°C/W
Notes: 1. Surface mounted on 1" x 1" FR4 board.
2 Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
3. Maximum under steady state conditions is 80°C/W.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current (Note 1)
Static Drain-Source On-State
Resistance (Note 1)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-20
VDS=VGS, ID=-250µA
VDS≤-5V, VGS=-4.5V
VGS=-4.5V, ID=-8A
VGS=-2.5V, ID=-5A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-2A
-0.4
-10
DYNAMIC PARAMETERS (Note 3)
Input Capacitance
CISS
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDD=-10V, ID=-1A
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=-4.5V, VDD=-10V, ID=-1A
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source-Drain Diode Current
IS
TC=25°C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS=-10A,VGS=0V
Notes: 1. Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-1
-10
+100
-100
V
µA
µA
nA
nA
14.5
20.5
33
65
V
A
mΩ
mΩ
mΩ
mΩ
430
360
310
pF
pF
pF
400
14
11
48
115
1200
650
nC
nC
nC
ns
ns
ns
ns
-0.75
-16
-60
-1.2
A
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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