UNISONIC TECHNOLOGIES CO., LTD Preliminary UPD02R145L Power MOSFET -29.7A, -20V, P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UPD02R145L is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UPD02R145L is suitable for battery switches, load switches and power management, etc. DFN-8(5x6) FEATURES * RDS(ON) < 14.5 mΩ @ VGS=-4.5V, ID=-8A RDS(ON) < 20.5 mΩ @ VGS=-2.5V, ID=-5A RDS(ON) < 33 mΩ @ VGS=-1.8V, ID=-2A RDS(ON) < 65 mΩ @ VGS=-1.5V, ID=-2A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UPD02R145LG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) 1 S 2 S Pin Assignment 3 4 5 6 7 8 S G D D D D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-017.a UPD02R145L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150°C) Pulsed Drain Current (t=300μs) Continuous Source-Drain Diode Current SYMBOL VDSS VGSS IDM RATINGS -20 ±8 -29.7 -23.8 -60 UNIT V V A A A TC=25°C IS -16 A TC=25°C TC=70°C PD TC=25°C TC=70°C ID 19 W 12 W Junction Temperature TJ -50~150 °C Storage Temperature Range TSTG -50~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Power Dissipation THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note 1, 3) t≤5s θJA 28 36 °C/W Junction-to-Case (Drain) Steady State θJC 5.3 6.5 °C/W Notes: 1. Surface mounted on 1" x 1" FR4 board. 2 Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. 3. Maximum under steady state conditions is 80°C/W. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R210-017.a UPD02R145L Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage On-State Drain Current (Note 1) Static Drain-Source On-State Resistance (Note 1) SYMBOL BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=+8V, VDS=0V VGS=-8V, VDS=0V -20 VDS=VGS, ID=-250µA VDS≤-5V, VGS=-4.5V VGS=-4.5V, ID=-8A VGS=-2.5V, ID=-5A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-2A -0.4 -10 DYNAMIC PARAMETERS (Note 3) Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-4.5V, VDD=-10V, ID=-1A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=-4.5V, VDD=-10V, ID=-1A RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source-Drain Diode Current IS TC=25°C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS=-10A,VGS=0V Notes: 1. Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 3. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 -10 +100 -100 V µA µA nA nA 14.5 20.5 33 65 V A mΩ mΩ mΩ mΩ 430 360 310 pF pF pF 400 14 11 48 115 1200 650 nC nC nC ns ns ns ns -0.75 -16 -60 -1.2 A A V 3 of 6 QW-R210-017.a UPD02R145L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R210-017.a UPD02R145L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R210-017.a UPD02R145L Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R210-017.a