Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UPD02R320L
Power MOSFET
-8A, -20V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UPD02R320L is a P-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and low gate charge, etc.
The UTC UPD02R320L is suitable for load switch and battery
protection applications.

FEATURES
* RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-8A
RDS(ON) < 41mΩ @ VGS=-2.5V, ID=-5A
RDS(ON) < 56mΩ @ VGS=-1.8V, ID=-2A
RDS(ON) < 70mΩ @ VGS=-1.5V, ID=-2A
* Low RDS(ON)
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UPD02R320LG-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-20
V
±8
V
TA=25°C
-8
A
ID
Continuous Drain Current (Note 4)
TA=70°C
-6
A
Pulsed Drain Current (Note 3)
IDM
-32
A
TA=25°C
2.8
W
Power Dissipation (Note 2)
PD
TA=70°C
1.8
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum
allowed junction temperature of 150°C. The value in any given application depends on the user's specific
board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The maximum current rating is package limited.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 1)
t≤10s
37
45
°C/W
θJA
66
80
°C/W
Junction to Ambient (Note 1, 2)
Steady State
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum
allowed junction temperature of 150°C. The value in any given application depends on the user's specific
board design.
2. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IGSS
Static Drain-Source On-State Resistance
BVDSS
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=±8V, VDS=0V
-20
VDS=VGS, ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-8A
VGS=-4.5V, ID=-8A, TJ=125°C
VGS=-2.5V, ID=-5A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-2A
-0.3
-32
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V,
Gate to Source Charge
QGS
ID=-1A, IG=-100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=-4.5V, VDS=-10V,
ID=-1A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
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MIN TYP MAX UNIT
-1
-5
±100
V
µA
µA
nA
32
43
41
56
70
V
A
mΩ
mΩ
mΩ
mΩ
mΩ
400
220
160
11
pF
pF
pF
Ω
200
6
5
40
75
550
350
nC
nC
nC
ns
ns
ns
ns
-0.62
-1
V
-4.5
A
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
-10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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