UNISONIC TECHNOLOGIES CO., LTD Preliminary UPD02R320L Power MOSFET -8A, -20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UPD02R320L is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UPD02R320L is suitable for load switch and battery protection applications. FEATURES * RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-8A RDS(ON) < 41mΩ @ VGS=-2.5V, ID=-5A RDS(ON) < 56mΩ @ VGS=-1.8V, ID=-2A RDS(ON) < 70mΩ @ VGS=-1.5V, ID=-2A * Low RDS(ON) * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UPD02R320LG-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-019.a UPD02R320L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -20 V ±8 V TA=25°C -8 A ID Continuous Drain Current (Note 4) TA=70°C -6 A Pulsed Drain Current (Note 3) IDM -32 A TA=25°C 2.8 W Power Dissipation (Note 2) PD TA=70°C 1.8 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 4. The maximum current rating is package limited. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note 1) t≤10s 37 45 °C/W θJA 66 80 °C/W Junction to Ambient (Note 1, 2) Steady State Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R210-019.a UPD02R320L Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS Static Drain-Source On-State Resistance BVDSS VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=±8V, VDS=0V -20 VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-8A VGS=-4.5V, ID=-8A, TJ=125°C VGS=-2.5V, ID=-5A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-2A -0.3 -32 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge QG VGS=-4.5V, VDS=-10V, Gate to Source Charge QGS ID=-1A, IG=-100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-4.5V, VDS=-10V, ID=-1A, RG=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous IS Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 -5 ±100 V µA µA nA 32 43 41 56 70 V A mΩ mΩ mΩ mΩ mΩ 400 220 160 11 pF pF pF Ω 200 6 5 40 75 550 350 nC nC nC ns ns ns ns -0.62 -1 V -4.5 A 3 of 6 QW-R210-019.a UPD02R320L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R210-019.a UPD02R320L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS -10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R210-019.a UPD02R320L Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R210-019.a