TCMT110. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package C E 4 3 FEATURES • Low profile package (half pitch) • AC isolation test voltage 3750 VRMS • Low coupling capacitance of typical 0.3 pF • Current transfer ratio (CTR) selected into groups 1 2 • Low temperature coefficient of CTR A C • Wide ambient temperature range 22628-1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION APPLICATIONS The TCMT110. series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin package. • Programmable logic controllers • Modems • Answering machines The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. • General applications AGENCY APPROVALS • UL1577, file no. E76222, double protection • cUL component acceptance service no. 5A, double protection • DIN EN 60747-5-5 (VDE 0884-5) • FIMKO: FI EN 60950-1:2006 • BSI: BS EN60065:2002 BS EN60950-1:2006 • CQC GB 8898-2011, GB 4943.1-2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION SSOP-4 T C M T 1 1 0 # PART NUMBER AGENCY CERTIFIED/ PACKAGE UL, cUL, FIMKO, BSI, VDE SSOP-4 7.21 mm CTR (%) 5 mA 50 to 600 10 mA 40 to 80 5 mA 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 Note • Available only on tape and reel. Document Number: 83510 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C VISO 3750 VRMS COUPLER AC isolation test voltage (RMS) Related to standard climate 23/50 DIN 50014 Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 125 °C Soldering temperature (1) Tsld 260 °C Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VR = 0, f = 1 MHz MIN. TYP. MAX. VF 1.35 1.6 Cj 8 UNIT INPUT Forward voltage Junction capacitance V pF OUTPUT Collector emitter voltage IC = 100 μA VCEO 70 Emitter collector voltage IE = 100 μA VECO 7 VCE = 20 V, IF = 0 A ICEO 100 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz f = 1 MHz Ck 0.3 pF Collector dark current V V COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83510 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. VCE = 5 V, IF = 5 mA TCMT1100 CTR 50 VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 5 mA TYP. MAX. UNIT 600 % TCMT1101 CTR 40 80 % TCMT1102 CTR 63 125 % TCMT1103 CTR 100 200 % TCMT1104 CTR 160 320 % TCMT1105 CTR 50 150 % TCMT1106 CTR 100 300 % TCMT1107 CTR 80 160 % TCMT1108 CTR 130 260 % TCMT1109 CTR 200 400 % MAX. UNIT SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL Delay time PARAMETER VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) td MIN. TYP. 4.0 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) tr 5.5 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) tf 7.0 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) ts 1.5 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) ton 9.5 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) toff 8.5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) ton 3.0 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) toff 20.0 μs +5V IF IF 0 IF I C = 2 mA; adjusted through input amplitude tp t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 10 % 0 tr td 100 Ω Fig. 1 - Test Circuit, Non-Saturated Operation 0 tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times +5V I F = 10 mA ts t on 95 10804 IF 0 IC IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Document Number: 83510 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL Climatic classification (according to IEC 68 part 1) VALUE UNIT 40/110/21 Comparative tracking index CTI 175 VISO 3750 Maximum transient isolation voltage VIOTM 6000 V Maximum repetitive peak isolation voltage VIORM 707 V Maximum rated withstanding isolation voltage t = 1 min VRMS Apparent charge test voltage (method A) VIORM x 1.6 = VPR, type and sample test, tm = 60 s, partial discharge < 5 pC VPR 1132 Vpeak Apparent Charge Test Voltage (method B) VIORM x 1.875 = VPR, 100 % production test with tm = 1 s, partial discharge < 5 pC VPR 1326 Vpeak VIO = 500 VDC, Tamb = 100 °C RIO 1011 Ω VIO = 500 VDC, Tamb = TSI RIO 109 Ω PSO 350 mW Input safety current ISI 150 mA Input safety temperature TSI 175 °C Isolation resistance Isolation resistance (under fault conditions) Output safety power Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Creepage distance 5 mm Clearance distance 5 mm 0.4 mm Insulation thickness, reinforced rated per IEC60950 2.10.5.1 Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. 100 300 Coupled device IF - Forward Current (mA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 40 80 120 Tamb - Ambient Temperature (°C) Fig. 4 - Total Power Dissipation vs. Ambient Temperature 10 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = -55 °C 1 0.1 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current Document Number: 83510 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com IC - Collector Current (mA) 55 IF = 35 mA 50 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 0 0 1 2 3 4 5 6 7 8 9 10 NCTR - Normalized CTR (non-saturated) Vishay Semiconductors 1.2 IF = 5 mA 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 VCE - Collector Emitter Voltage (non-sat) (V) Fig. 6 - Collector Current vs. Collector Emitter Voltage 20 40 60 80 100 120 Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature 1.2 NCTR - Normalized CTR (sat) IF = 0 mA ICE0 - Leakage Current (nA) 0 Tamb - Ambient Temperature (°C) 10 000 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 IF = 5 mA 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 IF = 10 mA 10 IF = 5 mA 6 4 IF = 1 mA IF = 2 mA 2 0 0 0.1 0.2 0.3 20 40 60 80 100 120 Fig. 10 - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature VCEsat - Collector Emitter Voltage (V) 14 8 0 Tamb - Ambient Temperature (°C) Fig. 7 - Leakage Current vs. Ambient Temperature 12 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 80 100 120 Tamb - Ambient Temperature (°C) IC - Collector Current (mA) Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.4 VCE - Collector Emitter Voltage (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage 0.40 0.35 IF = 10 mA 0.30 Ic = 5 mA 0.25 0.20 Ic = 2 mA 0.15 0.10 0.05 Ic = 1 mA 0.00 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature Document Number: 83510 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors 1000 Tamb = 0 °C 1.2 VCC = 5 V Tamb = -55 °C Tamb = 25 °C 1.0 FCTR (kHz) NCTR - Normalized CTR (NS) 1.4 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.2 0 0.1 1 10 100 10 1 0.1 100 1 IF - Forward Current (mA) Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current 100 Fig. 15 - FCTR vs. Collector Current 1000 1.2 Tamb = 0 °C VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 1.0 0.8 VCE = 5 V, IC = 2 mA Tamb = -55 - °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 10 ton, toff Switching Time (μs) NCTR - Normalized CTR (sat) 10 IC (mA) 100 toff (μs) 10 1 ton (μs) 0.1 100 0 5 10 15 20 RL - Load Resistance (kΩ) IF - Forward Current (mA) Fig. 13 - Normalized CTR (saturated) vs. Forward Current Fig. 16 - Switching Time vs. Load Resistance 0 VCE = 5 V -20 RL = 100 Ω Phase Angle (deg) -40 RL = 1000 Ω -60 -80 -100 -120 -140 -160 1 10 100 1000 f - Frequency (kHz) Fig. 14 - FCTR vs. Phase Angle Document Number: 83510 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors 0.60 0.10 ± 0.10 0.4 ± 0.1 4.40 typ. 0.2 ± 0.05 2.85 max. 2.60 ± 0.20 2.00 ± 0.10 PACKAGE DIMENSIONS in millimeters 1.27 nom. 4 + 0.20 - 0.30 7.00 ± 0.30 Lead coplanarity 0.1 max. 3 1.27 0.9 Possible footprint 5.00 7.60 Pin One I.D. 1 2 PACKAGE MARKING (example) MT1100 V YWW 68 TAPE AND REEL PACKAGING in millimeters 2 ± 0.1 0.3 ± 0.05 4 ± 0.1 1.55 ± 0.05 1.75 ± 0.1 Pin 1 7.5 ± 0.1 16 ± 0.3 4.4 7.4 ± 0.1 7.4 ± 0.1 5° 2.2 ± 0.1 2.6 ± 0.1 8 ± 0.1 2.95 ± 0.1 1.6 ± 0.1 Fig. 17 Document Number: 83510 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 TCMT110. Series www.vishay.com Vishay Semiconductors SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 18 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD Devices Document Number: 83510 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 3.0, 10-Mar-16 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000