Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N65-CB
Preliminary
Power MOSFET
1.0A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N65-CB is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.

FEATURES
* RDS(ON) < 11.5Ω @ VGS = 10V, ID =0.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N65G-AA3-R
1N65L-TM3-T
1N65G-TM3-T
1N65L-TN3-R
1N65G-TN3-R
1N65L-T92-B
1N65G-T92-B
1N65L-T92-K
1N65G-T92-K
Note: Pin Assignment: G: Gate
D: Drain
S: Source
1N65G-AA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Package
SOT-223
TO-251
TO-252
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel
(2) AA3: SOT-223, TM3: TO-251, TN3: TO-252,
T92: TO-92
(3) L: Lead Free, G: Halogen Free and Lead Free
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1N65-CB

Preliminary
Power MOSFET
MARKING
PACKAGE
MARKING
SOT-223
TO-251 / TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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1N65-CB

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
1.0
A
Continuous
ID
1.0
A
Drain Current
4.0
A
Pulsed (Note 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
EAS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.2
V/ns
SOT-223
8.9
W
TO-251/TO-252
Power Dissipation
PD
27.6
W
TO-92
1.42
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=100mH, IAS=1.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤1.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
SOT-223
TO-251/TO-252
TO-92
SOT-223
TO-251/TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
150
110
180
14
4.53
88
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
VGS = 0V, ID = 250μA
650
VDS = 650V, VGS = 0V
Drain-Source Leakage Current
IDSS
VDS = 480V, TC =125°С
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V,
Gate-Source Charge
QGS
ID=1.3A, IG=100μA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD (ON)
VDD =30V, VGS=10V, ID =0.5A,
Turn-On Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 1.0 A
Reverse Recovery Time
tRR
IF=1.0A, VDD=100V
di/dt = 100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.4
V
10
μA
100 μA
100 nA
-100 nA
V/°С
4.0
11.5
V
Ω
125
20
4.5
pF
pF
pF
13
2.0
1.0
75
20
50
25
nC
nC
nC
ns
ns
ns
ns
1
4
1.4
215
0.37
A
A
V
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
itching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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1N65-CB
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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