Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6NM70-SH
Preliminary
Power MOSFET
6A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 6NM70-SH is a high voltage super junction MOSFET
and is designed to have better characteristics.
The UTC 6NM70-SH Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This
super junction MOSFET usually used at AC/DC power conversion,
and industrial power applications.

FEATURES
* RDS(ON) < 1.2Ω @ VGS = 10V, ID = 3.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6NM70L-TA3-T
6NM70G-TA3-T
6NM70L-TF1-T
6NM70G-TF1-T
6NM70L-TF3-T
6NM70G-TF3-T
6NM70L-TF3-T
6NM70G-TF3-T
6NM70L-TM3-R
6NM70G-TM3-R
6NM70L-TN3-R
6NM70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-101.b
6NM70-SH

Preliminary
Power MOSFET
MARKING
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6NM70-SH

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
6.0
A
Drain Current Pulsed (Note 2)
IDM
24
A
Avalanche Energy, Single Pulsed (Note 3)
EAS
50
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.8
V/ns
TO-220
125
W
TO-220F
40
W
Power Dissipation (TC = 25°C)
PD
TO-220F1/TO-220F2
42
W
TO-251/TO-252
55
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=70mH, IAS=1.2A, VDD=50V, RG=0 Ω, Starting TJ=25°C
4. ISD ≤ 6.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F
Junction to Case
TO-220F1/TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
110
3.1
1.0
2.9
2.27
°С/W
°С/W
°С/W
°С/W
°С/W
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6NM70-SH

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
BVDSS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
Drain-Source Leakage Current
IDSS
VDS = 560V, TC = 125°C
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
ID = 250mA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Drain-Source ON-State Resistance
RDS(ON)
VGS = 10V, ID = 3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V,
ID=1.3A, IG=100μA
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
Turn-on Delay Time
tD(ON)
VDD =30V, VGS=10V,
Turn-on Rise Time
tR
ID =0.5A, RG=25Ω
Turn-off Delay Time
tD(OFF)
(Note 1, 2)
Turn-off Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS =6.0A
Reverse Recovery Time
trr
VGS = 0 V, IS = 6.0A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
MIN
TYP MAX UNIT
700
1
1
100
-100
0.67
2.5
V
μA
μA
nA
nA
V/°C
4.5
1.2
V
Ω
178
154
18
pF
pF
pF
40
4
7.5
70
47
122
38
nC
nC
nC
ns
ns
ns
ns
328
2.5
6
A
24
A
1.4
V
ns
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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6NM70-SH

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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6NM70-SH
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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