Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N70K-TC
Power MOSFET
4.0A, 700V N-CHANNEL
POWER MOSFET
1

TO-220
DESCRIPTION
The UTC 4N70K-TC is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.

FEATURES
1
TO-220F1
1
* RDS(ON) < 3.3Ω @ VGS = 10 V, ID = 2.0 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N70KL-TA3-T
4N70KG-TA3-T
4N70KL-TF1-T
4N70KG-TF1-T
4N70KL-TN3-R
4N70KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

TO - 252
Package
TO-220
TO-220F1
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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4N70K-TC

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Avalanche Current (Note 2)
IAR
4.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
80
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
1.6
V/ns
TO-220
106
W
Power Dissipation
PD
TO-220F1
36
W
TO-252
49
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F1
Junction-to-Ambient
TO-252
TO-220
Junction-to-Case
TO-220F1
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
110
1.18
3.4
2.55
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
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4N70K-TC

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.0 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
IG= 100μA (Note1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time (Note 1)
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
VGS = 0 V, IS = 4.0 A
Reverse Recovery Time (Note 1)
trr
VGS = 0V, IS = 4.0A,
dIF / dt =100A/μs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
700
1
100
-100
2.0
4.0
3.3
V
μA
nA
V
Ω
254
56
6.3
pF
pF
pF
45
4.0
3.6
40
27
140
33
nC
nC
nC
ns
ns
ns
ns
4.0
16
1.4
248
0.15
A
A
V
nS
μC
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4N70K-TC

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N70K-TC

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N70K-TC
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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