UNISONIC TECHNOLOGIES CO., LTD 4N70K-TC Power MOSFET 4.0A, 700V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N70K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220F1 1 * RDS(ON) < 3.3Ω @ VGS = 10 V, ID = 2.0 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N70KL-TA3-T 4N70KG-TA3-T 4N70KL-TF1-T 4N70KG-TF1-T 4N70KL-TN3-R 4N70KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source TO - 252 Package TO-220 TO-220F1 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-040.b 4N70K-TC Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Avalanche Current (Note 2) IAR 4.0 A Avalanche Energy Single Pulsed (Note 3) EAS 80 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.6 V/ns TO-220 106 W Power Dissipation PD TO-220F1 36 W TO-252 49 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F1 Junction-to-Ambient TO-252 TO-220 Junction-to-Case TO-220F1 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 1.18 3.4 2.55 UNIT °C/W °C/W °C/W °C/W °C/W 2 of 6 QW-R205-040.b 4N70K-TC Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.0 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0 V, VDS = 25 V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG= 100μA (Note1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) VDS=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD VGS = 0 V, IS = 4.0 A Reverse Recovery Time (Note 1) trr VGS = 0V, IS = 4.0A, dIF / dt =100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 1 100 -100 2.0 4.0 3.3 V μA nA V Ω 254 56 6.3 pF pF pF 45 4.0 3.6 40 27 140 33 nC nC nC ns ns ns ns 4.0 16 1.4 248 0.15 A A V nS μC 3 of 6 QW-R205-040.b 4N70K-TC Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-040.b 4N70K-TC Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R205-040.b 4N70K-TC Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-040.b