UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R170M Power MOSFET 60V, 35A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R170M is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UNA06R170M is suitable for switching application. FEATURES * RDS(ON) < 17 mΩ @ VGS=10V, ID=17.5A * Very low on-resistance * Very low gate charge * High avalanche ruggedness * Low gate drive power loss SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R170ML-TN3-R UNA06R170MG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-112.a UNA06R170M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±16 V TC=25°C 35 A Continuous Drain Current ID TC=100°C 24.5 A Pulsed Drain Current (Note 1) IDM 140 A Avalanche Current (Note 2) IAR 4.0 A Single Pulse Avalanche Energy (Note 3) EAS 800 mJ Power Dissipation PD 80 W Operating Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by junction temperature. 3. L=100mH, IAS=4.0A, VDD=30V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤35A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R209-112a SYMBOL θJA θJC RATINGS 100 1.88 UNIT °C/W °C/W 2 of 6 UNA06R170M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Zero Gate Voltage Drain Current IDSS BVDSS TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=125°C VGS=±16V, VDS=0V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State VGS=10V, ID=17.5A RDS(ON) Resistance VGS=4.5V, ID=17.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Intrinsic Gate Resistance RG f=1MHz Open Drain SWITCHING PARAMETERS Total Gate Charge QG VDS= 50V, VGS= 10V, ID= 1.3A, Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS= 30V, VGS= 10V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Forward On Voltage (Note 2) VSD VGS=0 V, IS=30 A Reverse Recovery Time trr VGS=0V, IS=30A, dIF/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1.0 1 10 ±100 V µA µA nA 3.0 17 20 V mΩ mΩ 425 175 135 2.2 pF pF pF Ω 110 9.5 12 48 78 1120 335 nC nC nC ns ns ns ns 33 24 90 A 360 A 1.3 V ns nC 3 of 6 QW-R209-112.a UNA06R170M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-112.a UNA06R170M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-112.a UNA06R170M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-112.a