Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N50-CB
Preliminary
Power MOSFET
2A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N50-CB is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 2N50-CB is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON) < 5.0Ω @ VGS=10V, ID=1A
* High Switching Speed
* 100% Avalanche Tested

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N50G-AA3-R
2N50L-TM3-T
2N50G-TM3-T
2N50L-TN3-R
2N50G-TN3-R
2N50L-T92-B
2N50G-T92-B
2N50L-T92-K
2N50G-T92-K
Note: Pin Assignment: G: Gate
D: Drain
S: Source
2N50G-AA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
SOT-223
TO-251
TO-252
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel
(2) AA3: SOT-223, TM3: TO-251, TN3: TO-252,
T92: TO-92
(3) L: Lead Free, G: Halogen Free and Lead Free
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2N50-CB

Preliminary
Power MOSFET
MARKING
PACKAGE
MARKING
SOT-223
TO-251 / TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
RATINGS
UNIT
500
V
±30
V
Continuous (TC=25°C)
2 (Note 3)
A
Drain Current
Pulsed (Note 2)
8 (Note 3)
A
Avalanche Current (Note 2)
2
A
Single Pulsed
50
mJ
Avalanche Energy
3.3
mJ
Repetitive (Note 4)
SOT-223
1
W
TO-251/TO-252
Power Dissipation (TC=25°C)
PD
50
W
TO-92
3
W
SOT-223
0.008
W
Derate above 25°C
TO-251/TO-252
PD
0.4
W
TO-92
0.025
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Drain current limited by maximum junction temperature.
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
5. L=25mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C.
6. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C.
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
SOT-223
TO-251/TO-252
TO-92
SOT-223
TO-251/TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
150
110
160
14
2.5
88
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
IG = 250μA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD =30V, VGS=10V, ID =0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=2A, VGS=0V
Reverse Recovery Time
tRR
VGS=0V, IS = 2A, di/dt = 100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
2.0
4.0
5.0
V
Ω
153
25.3
4.7
pF
pF
pF
12.6
1.3
0.8
26
18
62
25
nC
nC
nC
ns
ns
ns
ns
2
8
1.4
140
0.48
A
A
V
ns
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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