Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N60-Q
Preliminary
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N60-Q is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES
* RDS(ON) < 0.9Ω @ VGS =10V, ID = 5 A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N60L-TA3-T
10N60G-TA3-T
TO-220
10N60L-TF3-T
10N60G-TF3-T
TO-220F
10N60L-TF1-T
10N60G-TF1-T
TO-220F1
10N60L-TF2-T
10N60G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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10N60-Q

Preliminary
Power MOSFET
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
38
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
500
mJ
Avalanche Energy
12
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation
PD
TO-220F/TO-220F1
52
W
TO-220F2
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 10A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
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θJC
RATING
62.5
0.8
UNIT
°C/W
°C/W
2.4
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS=0V, ID= 250μA
VDS=600V, VGS=0V
Forward
VGS=30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω,
Turn-On Rise Time
tR
VGS=0V (Note1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
IG=100μA (Note1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS=0V, IS=10A,
dIF/dt=100A/µs (Note1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
0.7
2.0
V
1
µA
100 nA
-100 nA
V/°C
4.0
0.9
V
Ω
1300
140
19
pF
pF
pF
80
120
300
160
43
7.5
13
ns
ns
ns
ns
nC
nC
nC
420
4.2
57
1.4
V
10
A
40
A
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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