Si4435BDY Datasheet

Si4435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.020 at VGS = - 10 V
- 9.1
0.035 at VGS = - 4.5 V
- 6.9
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
• Battery Switch
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
D
Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free)
Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Diode Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
-7
- 7.3
- 5.6
- 50
- 2.1
- 1.25
2.5
1.5
1.6
0.9
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 9.1
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
70
85
18
22
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72123
S09-0767-Rev. D, 04-May-09
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1
Si4435BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
-1
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
VDS = - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
-3
± 100
µA
- 40
A
VGS = - 10 V, ID = - 9.1 A
0.015
0.020
VGS = - 4.5 V, ID = - 6.9 A
0.025
0.035
gfs
VDS = - 10 V, ID = - 9.1 A
24
VSD
IS = - 2.1 A, VGS = 0 V
- 0.8
- 1.2
33
70
Ω
S
V
Dynamicb
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
8.6
Turn-On Delay Time
td(on)
10
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
5.8
IF = - 2.1 A, dI/dt = 100 A/µs
15
15
25
110
170
70
110
60
90
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 6 V
TC = - 55 °C
5V
25 °C
40
4V
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
10
0
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2
1
2
3
4
20
10
3V
0
125 °C
30
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4.5
Document Number: 72123
S09-0767-Rev. D, 04-May-09
Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.040
2400
0.030
1800
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.035
0.025
0.020
VGS = 10 V
0.015
Ciss
1200
0.010
600
0.000
0
0
10
20
30
40
50
0
5
10
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VGS = 10 V
ID = 9.1 A
VDS = 15 V
ID = 9.1 A
1.4
6
4
(Normalized)
R DS(on) - On-Resistance
8
1.2
1.0
0.8
2
0.6
- 50
0
0
10
20
30
40
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.10
R DS(on) - On-Resistance (Ω)
50
TJ = 150 °C
10
TJ = 25 °C
1
0.0
25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
15
On-Resistance vs. Drain Current
10
VGS - Gate-to-Source Voltage (V)
Coss
Crss
0.005
0.08
0.06
ID = 9.1 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72123
S09-0767-Rev. D, 04-May-09
1.4
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
30
24
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
0.4
0.0
- 0.2
18
12
6
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10-2
150
10-1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by R(DS)on*
600
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
TA = 25 °C
Single Pulse
DC
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72123
S09-0767-Rev. D, 04-May-09
Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72123.
Document Number: 72123
S09-0767-Rev. D, 04-May-09
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Revision: 02-Oct-12
1
Document Number: 91000