Data Sheet

BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
Rev. 03 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Electrostatically robust due to
integrated protection diodes
„ Reduced component count due to
integrated current sensor
„ Q101 compliant
1.3 Applications
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Fan control
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Quick reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
75
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; see Figure 2; [1]
see Figure 3
-
-
114
A
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 50 A; Tj = 25 °C; see
Figure 7; see Figure 8
-
8.8
10
ID/Isense
ratio of drain current to
sense current
Tj > -55 °C; Tj < 175 °C; VGS > 10 V
450
500
550
SF(TSD)
temperature sense diode
temperature coefficient
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-1.4
-1.54
-1.68
mV/K
VF(TSD)
temperature sense diode
forward voltage
IF = 250 µA; Tj = 25 °C
648
658
668
mV
[1]
Current is limited by power dissipation chip rating.
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
G
gate
2
ISENSE
sense current
3
A
anode
4
D
drain
5
K
cathode
6
KS
Kelvin source
7
S
source
mb
D
Simplified outline
Graphic symbol
d
mb
a
g
4
123 567
mounting base; connected to
drain
SOT427
(D2PAK)
MBL362
Isense
s
k
Kelvin source
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7C10-75AITE D2PAK
plastic single-ended surface-mounted package (D2PAK); 7 leads
(one lead cropped)
BUK7C10-75AITE_3
Product data sheet
Version
SOT427
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
2 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
75
V
VDGS
drain-gate voltage
-
75
V
VGS
gate-source voltage
-20
20
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2;
see Figure 3
[1]
-
114
A
[2]
-
75
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
456
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
-
272
W
IGS(CL)
gate-source clamping
current
continuous
-
10
mA
pulsed; tp = 5 ms; δ = 0.01
-
50
mA
-100
100
V
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
114
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
[1]
[2]
-
75
A
-
456
A
-
739
mJ
-
6
kV
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd
electrostatic discharge
voltage
HBM; C = 100 pF; R = 1.5 kΩ
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
3 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03na19
120
03ni93
120
ID
(A)
Pder
(%)
80
80
Capped at 75 A due to package
40
40
0
0
0
50
100
150
200
0
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
50
100
150
200
Tmb (°C)
Normalized continuous drain current as a
function of mounting base temperature
03ni94
103
ID
(A)
Limit RDSon = VDS/ID
tp = 10 μs
102
100 μs
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
1
Fig 3.
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
4 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
mounted on printed-circuit board;
minimum footprint
-
-
50
K/W
Rth(j-mb)
thermal resistance from
see Figure 4
junction to mounting base
-
-
0.55
K/W
03ni64
1
Z th(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
δ=
P
tp
T
single shot
t
tp
T
10-3
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
5 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
75
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
70
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
2
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
4.4
V
VDS = 75 V; VGS = 0 V; Tj = 25 °C
-
0.1
10
µA
VDS = 75 V; VGS = 0 V; Tj = 175 °C
-
-
250
µA
20
22
-
V
IG = -1 mA; VDS = 0 V; Tj > -55 °C;
Tj < 175 °C
20
22
-
V
VDS = 0 V; VGS = 10 V; Tj = 25 °C
-
22
1000
nA
VDS = 0 V; VGS = -10 V; Tj = 25 °C
-
22
1000
nA
VDS = 0 V; VGS = 10 V; Tj = 175 °C
-
-
10
µA
VDS = 0 V; VGS = -10 V; Tj = 175 °C
-
-
10
µA
VGS = 10 V; ID = 50 A; Tj = 25 °C;
see Figure 7; see Figure 8
-
8.8
10
mΩ
VGS = 10 V; ID = 50 A; Tj = 175 °C;
see Figure 7; see Figure 8
-
-
21
mΩ
Static characteristics
V(BR)DSS
VGS(th)
IDSS
V(BR)GSS
IGSS
RDSon
drain leakage current
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C;
voltage
Tj < 175 °C
gate leakage current
drain-source on-state
resistance
VF(TSD)
temperature sense
diode forward voltage
IF = 250 µA; Tj = 25 °C
648
658
668
mV
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-1.4
-1.54
-1.68
mV/K
VF(TSD)hys
temperature sense
diode forward voltage
hysteresis
IF > 125 µA; IF < 250 µA; Tj = 25 °C
25
32
50
mV
ID/Isense
ratio of drain current to
sense current
VGS > 10 V; Tj > -55 °C; Tj < 175 °C
450
500
550
ID = 25 A; VDS = 60 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
-
121
-
nC
-
20
-
nC
-
44
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
BUK7C10-75AITE_3
Product data sheet
-
4700
-
pF
-
800
-
pF
-
455
-
pF
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
6 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
-
35
-
ns
tr
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
108
-
ns
td(off)
turn-off delay time
-
185
-
ns
tf
fall time
-
100
-
ns
LD
internal drain
inductance
from upper edge of drain mounting base to
center of die; Tj = 25 °C
-
2.5
-
nH
LS
internal source
inductance
from source lead to source bond pad;
Tj = 25 °C
-
7.5
-
nH
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
-
0.85
1.2
V
trr
reverse recovery time
-
75
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
-
270
-
nC
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
7 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ni74
350
ID
10
(A)
280
9
label is VGS (V)
8.5
20
03ni76
18
RDSon
(mΩ
)
8
7.5
14
210
7
6.5
140
6
10
5.5
70
5
4.5
0
6
0
Fig 5.
2
4
6
8
10
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
5
Fig 6.
VGS = 5.5 V 6 V
RDSon
(mΩ
)
6.5 V
7V
15
VGS (V)
8V
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
03nb25
2.4
03ni75
20
10
a
1.6
16
10 V
20 V
12
0.8
8
0
Fig 7.
70
140
210
280
0
−60
350
ID (A)
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
60
120
180
Tj (°C)
Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7C10-75AITE_3
Product data sheet
0
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
8 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03aa32
5
ID
(A)
VGS(th)
(V)
4
typ
max
10−3
typ
2
min
10−2
max
3
10−4
min
10−5
1
0
−60
Fig 9.
03aa35
10−1
10−6
0
60
120
0
180
2
4
6
Tj (°C)
VGS (V)
Gate-source threshold voltage as a function of
junction temperature
03ni77
80
gfs
(S)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03ni97
8000
C
(pF)
60
6000
40
4000
Ciss
Crss
Coss
20
2000
0
0
0
25
50
75
ID (A)
100
Fig 11. Forward transconductance as a function of
drain current; typical values
10-2
1
10
VDS(V)
102
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7C10-75AITE_3
Product data sheet
10-1
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
9 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ni78
100
03ni92
10
VGS
ID
(V)
(A)
8
75
14 V
6
50
VDS = 60 V
4
175 °
C
25
2
Tj = 25 °C
0
0
0.0
2.0
4.0
VGS (V)
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03ne84
700
0
6.0
50
QG (nC)
150
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
03ne85
−1.70
max
SF
(mV/K)
VF
(mV)
100
−1.60
600
typ
−1.50
500
min
400
0
50
100
150
200
−1.40
645
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values
665
675
Fig 16. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values
BUK7C10-75AITE_3
Product data sheet
655
VF (mV)
Tj (°C)
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
10 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ni98
600
ID/Isense
03ni79
100
IS
(A)
550
75
500
50
175 °
C
25
450
Tj = 25 °
C
0
400
4
8
12
16
VGS (V)
20
Fig 17. Drain-sense current ratio as a function of
gate-source voltage; typical values
0.0
0.8
1.2
VSD (V)
1.6
Fig 18. Reverse diode current as a function of reverse
diode voltage; typical values
BUK7C10-75AITE_3
Product data sheet
0.4
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
11 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped)
SOT427
A
A1
E
D1
mounting
base
D
HD
4
1
Lp
7
b
e
e
e
e
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.27
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-03-09
06-03-16
SOT427
Fig 19. Package outline SOT427 (D2PAK)
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
12 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7C10-75AITE_3
20090217
Product data sheet
-
BUK7C10_75AITE-02
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BUK7C10_75AITE-02
(9397 750 11048)
20030318
Product data sheet
-
BUK7C10_75AITE-01
BUK7C10_75AITE-01
(9397 750 09881)
20020725
Product data sheet
-
-
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
13 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK7C10-75AITE_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 17 February 2009
14 of 15
BUK7C10-75AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 February 2009
Document identifier: BUK7C10-75AITE_3
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