Datasheet

Photomicrosensor (Transmissive)
EE-SX1096-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
• With a horizontal aperture.
25±0.2
Two, R1
19±0.15
Optical axis
■ Absolute Maximum Ratings (Ta = 25C)
6±0.2 5±0.2
Item
Two, C2
Four, C0.3
Two, 3.2±0.2 dia. holes
Emitter
12.6±0.2
3.4±0.2
Emitter
Sensing
window
B
2.1±0.15
0.5±0.1
A
Optical axis
2.1±0.15
Detector
0.5±0.1
3.1
2.5±0.1
610MIN
C
3.55
11.6±0.2
Cross section B-B
B
K 4 A
Four, Wires UL1061,
AWG#28
Cross section A-A
A
Ambient temperature
Internal Circuit
A
E
K
Unless otherwise specified, the
tolerances are as shown below.
C
Terminal Color Name
No.
A
Red Anode
Dimensions
3 mm max.
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25C to 80C
Storage
Tstg
–25C to 85C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C.
2. The pulse width is 10 s maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, spring
washers, and flat washers and use a tightening torque of 0.5
N·m max.
4. You should use the product in the condition without any
stress on the cable.
Tolerance
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
K
C
Black Cathode
White Collector
10 < mm ≤ 18
±0.55
E
Green Emitter
18 < mm ≤ 30
±0.65
Rated value
IF
Detector
10±0.2
7.2±0.2
E
Symbol
Forward current
■ Electrical and Optical Characteristics (Ta = 25C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 A typ., 10 A max.
VR = 4 V
Peak emission wavelength
P
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
P
850 nm typ.
VCE = 10 V
Rising time
tr
4 s typ.
VCC = 5 V, RL = 100 , IL = 5 mA
Falling time
tf
4 s typ.
VCC = 5 V, RL = 100 , IL = 5 mA
146
EE-SX1096-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
IF = 20 mA
IF = 10 mA
Dark current ID (nA)
IF = 30 mA
Collector−Emitter voltage VCE (V)
Response time tr, tf (μs)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
120
80
d
60
40
20
−0.5
−0.25
0
0.25
0.5
Distance d (mm)
0.75
1.0
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
0
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response Time vs. Load Resistance Characteristics (Typical)
VCE = 10 V
0 lx
Relative light current IL (%)
IF = 40 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
IF = 50 mA
Forward current IF (mA)
Forward voltage VF (V)
(Center of optical axis)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
100
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1096-W11 Photomicrosensor (Transmissive)
147
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