Datasheet

Photomicrosensor (Transmissive)
EE-SX1160-W11
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Wide model with a 9.5-mm-wide slot.
• Pre-wired Sensors (AWG28).
• Solder-less lead wire connection to increase reliability.
31.75±0.2
Four, R1
25.4±0.15
Optical axis
■ Absolute Maximum Ratings (Ta = 25C)
6±0.2 5.2±0.2
Emitter
Detector
18.9±0.2
Emitter
Item
Two, 3.2±0.15 dia. holes
Four, C0.3
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
9.5±0.2
Sensing
window
1.1±0.1
13.9±0.1
12±0.1
B
A
Optical axis
15.5±0.2
12.7±0.2
1.1±0.1
13.9±0.1
12±0.1
3.2±0.1
E
Two, C0.8
Detector
610MIN.
C
B
K
A
Cross section B-B
A
Cross section A-A
Ambient temperature
Internal Circuit
A
E
K
C
Terminal Color Name
No.
A
Red Anode
K
C
Black Cathode
White Collector
E
Green Emitter
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Operating
Topr
–25C to 80C
Storage
Tstg
–25C to 85C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C.
2. The pulse width is 10 s maximum with a frequency of
100 Hz.
3. If you mount the Sensor with screws, use M3 screws, and
flat washers and use a tightening torque of 0.5 N·m max.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 A typ., 10 A max.
VR = 4 V
Peak emission wavelength
P
920 nm typ.
IF = 20 mA
Light current
IL
3.5 mA min., 16 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
P
850 nm typ.
VCE = 10 V
Rising time
tr
4 s typ.
VCC = 5 V, RL = 100 , IL = 5 mA
Falling time
tf
4 s typ.
VCC = 5 V, RL = 100 , IL = 5 mA
Detector
150
EE-SX1160-W11 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
20
100
40
30
50
20
10
0
-40
-20
0
20
40
60
Ta = 25°C
Ta = 70°C
IF = 40 mA
14
IF = 30 mA
10
IF = 20 mA
8
6
IF = 10 mA
4
6
4
0
10
20
30
40
50
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
Dark current ID (nA)
IF = 50 mA
12
8
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Ta = 25°C
22
16
10
Forward current IF (mA)
Relative Light Current vs.
Ambient Temperature Characteristics (Typical)
26
20
12
Forward voltage VF (V)
Voltage Characteristics (Typical)
18
14
0
Ambient temperature Ta (°C)
24
16
2
0
100
80
Ta = 25°C
VCE = 10 V
18
Light current IL (mA)
PC
Forward current IF (mA)
50
Collector dissipation PC (mW)
IF
Light current IL (mA)
Light Current vs. Forward Current
Characteristics (Typical)
150
60
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
2
1
2
3
4
5
6
7
8
9
10
Ambient temperature Ta (°C)
Response Time vs. Load Resistance Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of
optical axis)
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
Distance d (mm)
1.5
2.0
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
Relative light current IL (%)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
2.5
(Center of optical axis)
0
0
80
d
60
40
20
0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5
1.0
1.5
2.0
2.5
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1160-W11 Photomicrosensor (Transmissive)
151
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