Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN

Product Brief
RF transistors 8th generation
Best in class performance for WiFi® connectivity
The BFx840x product family is a series of discrete Hetero-junction Bipolar Transistors
(HBT) addressing dual and fixed frequency Low Noise Amplifier (LNA) solutions for high
performance WiFi® connectivity applications.
It combines 80 GHz f T silicon-germanium:carbide (SiGe:C) B9HFM process and adopts
dedicated device geometry reducing the parasitic capacitance between substrate and
transistor degrades high-frequency characteristics and ultimately improved.
RF transistor 8th generation allow engineers to increase the RF link budget and Signalto-Noise Ratio (SNR) of their AP routers and mobile stations when wider coverage areas
are needed and especially when a higher order modulation scheme is used as in emerging very high throughput wireless specifications such as 256 Quadrature Amplitude
Modulation (QAM) in IEEE 802.11ac with more stringent SNR requirements for both the AP
and the client.
RF Transistors 8th generation Best-in-Class NF and Gmax SiGe competitor comparison
0.8
30
Best in class
25
0.7
+17%
-15%
Best in class
0.6
Gain [dB]
NF [dB]
20
BPx740
series
››8
BPx840
series
www.infineon.com
››Broad range of frequency coverage
››Reduced power consumption within
battery powered devices
››Robustness
››High tunability and consequent
ease of use
››Device suitability under input signal
power-stress
››WiFi® Access Point (AP) routers and
0
BPx740
series
BPx840
series
Comp. N
generation RF Transistors come with an improved BiC in point of NF and Power Gain
Gmax vs previous generation and vs closest SiGe competitor
th
Key benefits
Applications
10
Comp. N
Best-in-class RF performance
››High transition frequency f T = 80 GHz
››High maximum RF input power
››1.5 kV HBM ESD robustness
››High gain (18 dB) and best-in-class
noise figure level (0.6 dB) with only 8
external passives
››Low voltage supply capability e.g.
VCC = 1.2 V and 1.8 V
15
5
0.5
Key features
WiFi® modules
››WiMAX and UWB
››Satellite communication systems
(SDARs, DAB)
››Navigation systems
(e.g. GPS, glonass)
››Ka-band oscillators (DROs)
››Remote control for multicopters
Product Brief
RF transistors 8th generation
Best in class performance for WiFi® connectivity
Block diagram
2.4 GHz LNA
SPDT switch
Antenna
2.4 / 5 GHz
Rxg
2.4 GHz PA
Power detector
SPDT switch
WiFi
Transceiver
5 GHz LNA
SPDT switch
ESD
diode
Rxg
5 GHz PA
Power detector
Highlight products
Infineon products
Txg
Txg
Other products
Low Noise Amplifiers (LNA) are key components required to increase the system sensitivity and to extend the max. connecting distance
for WiFi® applications. It is mostly important to achieve with superior performance where losses of the whole RF frontend become critical due to long routing paths for instance in WiFi® architectures with 4x4 MIMO or 8x8 MiMO functions.
Infineon 8th generation RF SiGe Bipolar transistors working as LNA deliver the lowest noise figure (NF) of 0.6 dB at 5.5 GHz, highest gain
with its high frequency (fT) and superior linearity in comparison to other solutions available in the market. This outstanding performance delivers system sensitivity improvement and interference immunity enhancement and helps engineers to design high-performance WiFi® applications while been price attractive.
Orderable part No.
Product type
OPN
NFmin (typ) [dB]
Gmax (typ) [dB]
OIP3 [dBm]
OP1dB [dBm]
Package
BFP843
BFP843H6327XTSA1
0.95
22.5
24.0
7.0
SOT343
BFP843F
BFP843FH6327XTSA1
0.90
23.5
23.5
7.0
TSFP
BFR843EL3
BFR843EL3E6327XTSA1
0.95
24.0
21.0
7.0
TSLP-3-9
BFP840ESD
BFP840ESDH6327XTSA1
0.60
27.0
21.0
4.5
SOT343
BFP840FESD
BFP840FESDH6327XTSA1
0.55
27.5
21.0
4.5
TSFP
BFP842ESD
BFP842ESDH6327XTSA1
0.40
23.5
24.5
8.0
SOT343
BFR840L3RHESD
BFR840L3RHESDE6327XTSA1
0.50
26.5
17.0
4.0
TSLP-3-9
In addition to RF SiGe transistor LNAs, Infineon offers a broad portfolio of RF frontend products for WiFi® applications such as transmitters/receivers or high-/low-band switches, ESD protection and power detection devices.
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Order Number: B154-I0247-V1-7600-EU-EC-P
Date: 03 / 2016
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where a
failure of the product or any consequences of the use thereof
can result in personal injury.