KSM3400 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 30V 1) 2) 3) 4) RDSON ID 28MΩ 5.8A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-23 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 5.8 Continuous Drain Current-T=100℃ 4.9 Pulsed Drain Current2 30 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 1.4 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM3400 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 90 RƟJA Thermal Resistance ,Junction to Ambient1 125 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM3400 KSM3400 SOT-23 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — 100 v μA nA VDS=VDS, ID=250μA 0.7 1.1 1.4 V VDS=10V,ID=6A — 22. 8 28 VDS=2.5V,ID=5A — 32 39 VDS=5V,ID=12A 10 15 — — 823 1030 — 99 — — 77 — — 3.3 5 — 4.8 7 — 26. 3 40 On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω ns ns ns td(off) Turn-Off Delay Time tf Fall Time — 4.1 6 Qg Total Gate Charge — 9.7 12 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 1.6 — Qgd Gate-Drain “Miller” Charge ID=6A — 3.1 — ns nC nC nC — — — V — 16 20 ns — — — nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM3400 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. Transfer Characteristics Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSM3400 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Figure 5: On-Resistance vs. Gate-Source Voltage Figure 7: Gate-Charge Characteristics Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4