KSM2302 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 20V 0.045Ω 2.4A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-23 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 2.4 Continuous Drain Current-T=100℃ 1.9 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM2302 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 14 RƟJA Thermal Resistance ,Junction to Ambient1 175 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM2302 KSM2302 SOT-23 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=10μA 20 — — IDSS Zero Gate Voltage Drain Current VDS=20V, VDS=0V — — 1 IGSS Gate-Source Leakage Current VDS=V, VDS=±8A — — ±100 v μA nA VDS=VDS, ID=250μA — 0.76 1.2 V VDS=10V,ID=6A — 0.045 0.06 VDS=2.5V,ID=5A — 0.07 0.115 VDS=5V,ID=12A — 8 — — 300 — — 120 — — 80 — — 7 15 — 55 80 — 16 60 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 10 25 Qg Total Gate Charge — 4.0 10 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 0.65 — Gate-Drain “Miller” Charge ID=6A — 1.5 — ns ns ns ns nC nC nC — 0.76 1.2 V — — — ns — — — nC td(on) Turn-On Delay Time tr Rise Time Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM2302 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 3 KSM2302 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET www.kersemi.com 4